教學(xué)大綱-中英文

1、固體電子器件原理教學(xué)大綱傅興華 編寫貴州大學(xué)電子科學(xué)系2008 年 5 月修訂2001 年 4 月）精品文檔固體電子器件原理教學(xué)大綱一、教學(xué)對(duì)象固體電子器件原理是微電子技術(shù)本科專業(yè)的專業(yè)課。學(xué)習(xí)本課程之前，要求學(xué)生已經(jīng)具有量子力學(xué)、熱力學(xué)與統(tǒng)計(jì)物理、固體物理和半導(dǎo)體物理方面的知識(shí)。本課程也可以作為計(jì)算機(jī)科學(xué)與技術(shù)、電子信息類和電氣信息類本科專業(yè)的選修課。二、教學(xué)目的本課程論述基于電子的微觀運(yùn)動(dòng)規(guī)律為基礎(chǔ)的各種電子器件的工作原理。其核心內(nèi)容是 硅微電子器件的工作原理和設(shè)計(jì)方法。本課程的目的是讓學(xué)生了解和掌握微電子器件相關(guān)的 物理知識(shí)，熟練掌握各種常見(jiàn)微電子器件參數(shù)與器件的結(jié)構(gòu)參數(shù)和材料參數(shù)之間的

2、關(guān)系。能 夠進(jìn)行典型的微電子器件設(shè)計(jì)。初步具備新型器件的跟蹤研究能力和自主開(kāi)發(fā)能力。為后續(xù) 課程微電子系統(tǒng)設(shè)計(jì)打下一定的基礎(chǔ)。三、教學(xué)要求教學(xué)內(nèi)容貫徹少而精的原則 , 突出重點(diǎn) , 突出基礎(chǔ)訓(xùn)練. 因本學(xué)科屬于快速發(fā)展的工程技術(shù)學(xué)科 , 在教學(xué)中還應(yīng)突出學(xué)科的前沿性. 本課程的總要求是, 學(xué)生學(xué)完本課程后 , 能夠比較自覺(jué)地應(yīng)用固體與半導(dǎo)體物理的知識(shí) , 分析電子器件的參數(shù)與微電子器件的結(jié)構(gòu)參數(shù)和工藝參數(shù)之間的關(guān)系 , 具有一定的電子器件的研究開(kāi)發(fā)能力 .四、教學(xué)內(nèi)容與安排本課程的主要內(nèi)容可分為 6 章。下面分別敘述其主要內(nèi)容和教學(xué)要求。第一章 微電子器件物理基礎(chǔ)已經(jīng)單獨(dú)開(kāi)設(shè)半導(dǎo)體物理課程的微

3、電子技術(shù)專業(yè)可跳過(guò)這一章。非器件專業(yè)的學(xué)生則必須講授這一章。主要內(nèi)容是固體材料的晶體結(jié)構(gòu)和能帶結(jié)構(gòu)，固體和半導(dǎo)體中載流子的統(tǒng)計(jì)分布，載流子的輸運(yùn)過(guò)程，低維輸運(yùn)，固體和半導(dǎo)體的熱、光、電行為。要求器件專業(yè)的學(xué)生從定性和定量?jī)煞矫嬲莆蘸蛻?yīng)用本章的知識(shí)，而對(duì)非器件專業(yè)的學(xué)生，則要求定性理解本章的內(nèi)容，并熟悉簡(jiǎn)單的定量關(guān)系。第二章 pn 結(jié)本章是器件原理中十分重要的一章，務(wù)必要求學(xué)生熟練掌握和應(yīng)用本章的知識(shí)。主要內(nèi)容包括， pn 結(jié)特性的定性描述和定量描述， pn 結(jié)的直流特性， pn 結(jié)的寄生效應(yīng)， pn 結(jié)的交 流小信號(hào)特性及其等效電路， pn 結(jié)的開(kāi)關(guān)過(guò)程及其物理實(shí)質(zhì)， pn 結(jié)的擊穿模型及其定

4、量描述。金屬 - 半導(dǎo)體接觸放在本章介紹。各種結(jié)構(gòu)的能帶圖，用泊松方程求解pn 結(jié)問(wèn)題和載流子在pn 結(jié)內(nèi)的輸運(yùn)原理是本章的兩個(gè)重點(diǎn)。具體要求是：深刻理解和畫出各種偏置條件下pn 結(jié)、金屬 - 半導(dǎo)體接觸的能帶圖；理解和掌握準(zhǔn)費(fèi)米能級(jí)的概念和應(yīng)用；熟練計(jì)算pn 結(jié)的接觸電勢(shì)差；深刻理解和掌握pn 結(jié)直流特性的有關(guān)概念和計(jì)算問(wèn)題；熟練計(jì)算pn 結(jié)的空間電荷區(qū)寬度和勢(shì)壘電容；熟練計(jì)算pn 結(jié)的開(kāi)關(guān)過(guò)程參數(shù)；掌握和計(jì)算pn 結(jié)擊穿的有關(guān)理論和計(jì)算問(wèn)題。要求學(xué)生課外完成30 道左右有一定難度的習(xí)題。第三章 雙極型晶體管本章包括了傳統(tǒng)晶體管原理的主要內(nèi)容， 是學(xué)生必須熟練掌握的內(nèi)容。 通過(guò)本章的學(xué)習(xí)，學(xué)

5、生對(duì)于微電子器件原理的分析和應(yīng)用能力將得到進(jìn)一步的提高。本章內(nèi)容主要包括雙極型晶體管內(nèi)載流子的輸運(yùn)過(guò)程，雙極型晶體管的直流特性、頻率特性、功率特性和開(kāi)關(guān)特性。要求重點(diǎn)掌握和理解雙極型晶體管的能帶圖，載流子的輸運(yùn)過(guò)程、直流特性和頻率特性幾方面的內(nèi)容。具體要求是：根據(jù)給定結(jié)構(gòu)參數(shù)和材料參數(shù)，計(jì)算雙極型晶體管的發(fā)射結(jié)注入效率、基區(qū)輸運(yùn)系數(shù)、a、3、基極電阻等直流參數(shù)；渡越時(shí)間、截止頻率等交流參數(shù)；解釋和計(jì)算發(fā)射極電流集 邊效應(yīng)和基區(qū)寬度擴(kuò)展效應(yīng)等功率晶體管的有關(guān)問(wèn)題；解釋和計(jì)算晶體管的極限參數(shù)如擊穿電壓、最大耗散功率等；計(jì)算晶體管的開(kāi)關(guān)參數(shù)。要求學(xué)生課外完成30 道左右有一定難度的習(xí)題。了解雙極型晶

6、體管技術(shù)和工藝的新進(jìn)展。第四章 場(chǎng)效應(yīng)晶體管由于現(xiàn)代集成電路中的器件絕大多數(shù)都是場(chǎng)效應(yīng)晶體管， 因此本章的學(xué)習(xí)顯得尤為重要。本章分為結(jié)型場(chǎng)效應(yīng)晶體管（jfet）和絕緣柵場(chǎng)效應(yīng)晶體管（igfet或mosfet兩部分。結(jié) 型場(chǎng)效應(yīng)晶體管部分可以略講，重點(diǎn)放在絕緣柵場(chǎng)效應(yīng)晶體管部分。具體要求是：掌握涉及 jfet 的電流電壓方程的有關(guān)問(wèn)題；掌握jfet 的短溝道效應(yīng)的有關(guān)概念和物理模型，了解jfet交流特性和參數(shù)。掌握most極管的實(shí)驗(yàn)原理和方法，most極管c-v特性的重要意義和應(yīng)用范圍；深刻理解閾電壓各項(xiàng)的物理意義，熟練掌握mosfe匐電壓的計(jì)算；掌握 mosfeti流電壓方程、直流參數(shù)和交流參

7、數(shù)的有關(guān)計(jì)算問(wèn)題。理解亞閾區(qū)導(dǎo)電原理、物理模型和計(jì)算方法。深刻理解和掌握各種短溝道效應(yīng)的物理模型、分析方法。了解mosfet勺按比例縮小理論和重要意義。了結(jié)亞微米、深亞微米 mosfe彼展的最新動(dòng)向。要求學(xué)生課外完成 30道左右有一定難度的習(xí)題，閱讀有關(guān)mosfe最新進(jìn)展的文獻(xiàn) 5萬(wàn)字以上。了解 mosfet1體管技術(shù)和工藝的新進(jìn)展。第五章 光電子器件半導(dǎo)體激光器件與發(fā)光器件在現(xiàn)代信息社會(huì)中扮演著十分重要的角色，是微電子技術(shù)和光電子技術(shù)的橋梁和紐帶，是最為活躍的研究領(lǐng)域之一。本章要求學(xué)生掌握常用半導(dǎo)體激光和發(fā)光器件的制造工藝、工作原理和主要參數(shù)，并了解這些器件的應(yīng)用領(lǐng)域。本章的教學(xué)方式為講座式

8、和討論式。課外作業(yè)為閱讀有關(guān)最新進(jìn)展的論文和論文綜述。第六章 功率器件本章主要學(xué)習(xí)雙極型功率器件、mosfe功率器件和可控硅三方面的內(nèi)容。鑒于學(xué)生通過(guò)前述章節(jié)的學(xué)習(xí)，已經(jīng)掌握了固體器件原理的基本方法，本章有學(xué)生講授、課堂討論的形式 完成。學(xué)時(shí)安排總學(xué)時(shí)數(shù)為 80 學(xué)時(shí)，其中課堂教學(xué)72 學(xué)時(shí)。第一章 微電子器件物理基礎(chǔ)8 學(xué)時(shí)；第二章 pn 結(jié)，金屬半導(dǎo)體接觸， 16 學(xué)時(shí)；第三章雙極型晶體管12 學(xué)時(shí)，專業(yè)文獻(xiàn)閱讀和討論2 學(xué)時(shí)；第四章場(chǎng)效應(yīng)晶體管20 學(xué)時(shí)，專業(yè)文獻(xiàn)閱讀和討論4 學(xué)時(shí)；第五章 光電子器件4 學(xué)時(shí)，專業(yè)文獻(xiàn)閱讀和討論2 學(xué)時(shí)；第六章 功率器件，文獻(xiàn)閱讀和討論 4 學(xué)時(shí)。專業(yè)文

9、獻(xiàn)閱讀和討論學(xué)時(shí)數(shù)也可集中使用。五、測(cè)試測(cè)試內(nèi)容分為概念、計(jì)算和開(kāi)放式論述，以及課程設(shè)計(jì)三個(gè)方面。概念題和計(jì)算題主要檢查學(xué)生掌握所學(xué)知識(shí)的面、牢固程度和綜合應(yīng)用所學(xué)知識(shí)解決一般問(wèn)題的能力，以閉卷考試的形式進(jìn)行。概念題占40%，計(jì)算題占60%，考題在題庫(kù)中抽取。題庫(kù)大小為不低于250 道題，其中概念題不低于100 道。開(kāi)放式論述題考查學(xué)生對(duì)已學(xué)知識(shí)的綜合應(yīng)用能力和應(yīng)用已有知識(shí)去獲取新知識(shí)的能力，以開(kāi)卷考試論文式考題的形式進(jìn)行。課程設(shè)計(jì)結(jié)合集成電路設(shè)計(jì)和微電子工藝實(shí)驗(yàn)進(jìn)行。六、參考書目1. 半導(dǎo)體物理學(xué), 劉恩科等待, 國(guó)防工業(yè)出版社 ,94 年版 .2. c. kittel introducti

10、on to solid state physics3. donald a. neamen: semiconductor physics and devices: basic principle, thirdedition. 清華大學(xué)出版社， 2003 年影印版。4. s. m. sze, physics of semiconductor devices, second edition.6 . 半導(dǎo)體器件學(xué)術(shù)論文選讀。7 傅興華等編半導(dǎo)體器件原理講義1994 年本。8 浙江大學(xué)半導(dǎo)體教研室編晶體管原理國(guó)防工業(yè)出版社1980 年 6 月第一版。七、教學(xué)中應(yīng)注意的問(wèn)題教學(xué)中正確處理基礎(chǔ)知識(shí)教學(xué)與文獻(xiàn)

11、閱讀之間的關(guān)系 , 專業(yè)文獻(xiàn)閱讀必須在學(xué)生已經(jīng)較為牢固地掌握基礎(chǔ)知識(shí)的前提下進(jìn)行，各章的教學(xué)重點(diǎn)一定要與固體與半導(dǎo)體物理的知識(shí)結(jié)合起來(lái)，講深講透。專業(yè)文獻(xiàn)的閱讀除了讓學(xué)生了解本學(xué)科的前沿之外，還應(yīng)對(duì)學(xué)生基礎(chǔ)知識(shí)的學(xué)習(xí)起鞏固作用和引導(dǎo)作用。文獻(xiàn)的選擇除了要確實(shí)能反映學(xué)科前沿外，還應(yīng)注意難易適當(dāng)，閱讀量適中，保證學(xué)生能在教師的輔導(dǎo)下真正讀懂原文。7 歡迎下載 。course programme forsolid state electronic devices1. the object of the course.principle of micro-electronics device is t

12、he course designed for the undergraduate students of micro-electronics technology specialty. before taking this class, the students are required to have the knowledge of quantum mechanics, thermodynamics and statistical physics, solid state physics and semiconductor physics. this course can also be

13、taken by the students of computer science and technology, electronic information and electric information.2. the purpose the coursethe class will discuss the principles of working of all kinds of electronic devices based on the microscopic movement of electron. the main content will be the principle

14、 of working and the method of design of silicon-based devices. the purpose is to let the students understand and master physical knowledge related to the microelectronic devices, skillfully master all kinds of relations of devices parameters with structural parameter and material parameter. the stud

15、ents are requires to be able to design some typical devices, also they will be able to have the basic ability to follow and develop new devices. this course will also make the students ready for the following course of the design microelectronic system.3. the requirement of the teachingthe main cont

16、ent of teaching should emphasize the main points, basic training. because this major is in the field of engineering and technology which is still developing fast, therefore the cutting-edge of this area should be emphasized in the teaching. the general requirement of this course is the following: af

17、ter taking this course, the students will be able to use the knowledge of solid state physics and semiconductor physics, to be able to analyze the relation between electronic devices parameters, microelectronic device structural parameter and material parameter, to be able to do research and develop

18、 of electronic devices.4. the content and arrangement of the teachingthe content of this course will be taught in six chapters, the following will be the detail.chapter 1 the basic physics of microelectronic devices.those in the major of microelectronic technology who have taken the course of semico

19、nductor physics can discard this chapter. for those who are not in microelectronic device major, they must take this chapter. the main content is crystal structure of solid material and energy band structure, the statistical distribution of charge carrier in solid and semiconductor, the transport of

20、 carriers, low dimensional transport, the thermo, electric and optical behavior of solid and semiconductor.the students in the major of micro-devices are required to master the knowledge of this chapter qualitatively and quantitatively. for those students not in the major of micro-device, they are r

21、equired to mater the knowledge qualitatively and to be familiar with some simple quantitative relations.chapter 2 pn junctionthis chapter is a very important chapter in the course of the principle of devices. the students are mandated to skillfully master and apply the knowledge in this chapter. the

22、 main knowledge in this chapter is the following: the qualitative and quantitative description of pn junction; the dc characteristic of pn junction; the induced effects in pn junction; the ac small signal characteristic and its equivalent circuit; the switch process and physical basis of pn junction

23、; the breakdown model of pn junction and its quantitative description. the metal-semiconductor contact will be introduced in this chapter. the energy band diagram of various device structure; to use the poission equation to solve the problem of pn junction and the transport of carrier in pn junction

24、 are the two important parts in this chapter.the requirement is:1) deeply understand the energy band diagram of pn junction and metal-semiconductor contact under various bias conditions. draw the diagrams skillfully.2) understand the concept of fermi level and master the application of it.3) calcula

25、te the contact potential of pn junction skillfully.4) deeply understand the concepts of dc characteristic of pn junction and master the related calculation5) skillfully calculate the width of space charge region and the capacity of potential barrier.6) skillfully calculate the parameters of switch p

26、rocess of pn junction7) understand the theoryt of breakdown of pn junction and master the related calculationthe students are required to finish about 30 problem with appropriate difficulty.chapter 3 the bipolar junction transistorsthe chapter covers the main contents of the traditionally treated as

27、pects of the bipolar transistors. they include:the carrier transportation in the bjt.the current gain factors of the bjt.the frequency response of the bjt.some topic related to the power application of the device.the switching characteristics of the device.after complete this chapter, the students s

28、hould consolidate their ability to analyze the physics nature of carriers in devices, and most importantly understand how to find the device parameters, such as current gain, breakdown voltage, cut off frequency, from the material and geometric parameters, such as mobility, doping concentration, jun

29、ction depth and width, of a device.chapter 4 the field effect transistorsthe chapter covers moscapacitor, mosfet,the jfet and mesfetis also discussed in brief. the main content to be grasped is as follows:mos capacitor and its characterization, c-v curve and its applications.the operation of the mos

30、fet.the threshold voltage and its calculation.modification of the threshold by short channel and narrow channel effectsadjustment of the threshold by ion implantation.other electrical effects resulted from the shrink size of the mosfet.the scaling theory.the students are required very familiar with

31、the above mentioned aspects, and then to read the related materials in“the international technology roadmap forsemiconductors ”.chapter 5 optical devicesthis chapter deals with the mechanisms of the emission and absorption of photon in semiconductors. devices which converted optical energy into elec

32、trical energy, such as solar cell, photo detector are covered. the representative devices which converted electrical energy into optical energy is light emitting diodes (led) and lasers. the energy band structure of the solid plays an important role in operations and fabrications of these devices.ch

33、apter 6 semiconductor power devicesthis chapter covers bipolar junction power transistors, power vmos and dmos transistors and the thyristors. heat sinking and junction temperature are also discussed in brief. this chapter is studied by students themselves and complete the course by discussions in class.course schedulethe total lecture hours of the course are 72.the fundamental physics of the solid and semiconductors: 8 hours.the pn junction and diode: 16 hours.the bipolar junction transistors: 12 hours, reading and discussions: 2 hours.the mos structure mosfet and