2.3.1全控型器件概述 Recognize typical full control devices中英版

2.3.1OverviewofFullControlledElectronicDevices2.3.1全控型器件概述Item2KnowledgeofPowerElectronicsDevices項(xiàng)目二認(rèn)識(shí)電力電子器件TeachingResourcesDatabaseof

NationalVocationalEducationPowerSupplyTechnologyBilingualcourses.PowerElectronicsTechnology電力電子技術(shù)2.3.1概述Overview20世紀(jì)80年代以來，信息電子技術(shù)與電力電子技術(shù)在各自發(fā)展的基礎(chǔ)上相結(jié)合——高頻化、全控型、采用集成電路制造工藝的電力電子器件，從而將電力電子技術(shù)又帶入了一個(gè)嶄新時(shí)代。Sincethe1980s,informationelectronictechnologyandpowerelectronictechnologyhavecombinedonthebasisoftheirrespectivedevelopment--high-frequency,fullycontrolled,powerelectronicdevicesusingintegratedcircuitmanufacturingprocess,thusbringingpowerelectronictechnologyintoanewera.2.3.1概述Overview全控型典型代表——門極可關(guān)斷晶閘管、電力晶體管(——GTR)、電力場(chǎng)效應(yīng)晶體管(PowerMOSFET

)、絕緣柵雙極晶體管(IGBT或IGT)。Typicalrepresentativeoffullcontrolledtype-GateTurnOffThyristor,Powertransistor(GTR),PowerFieldEffectTransistor(PowerMOSFET),InsulatedGateBipolarTransistor(IGBTorIGT).門極可關(guān)斷晶閘管(GTO)在晶閘管問世后不久出現(xiàn)。GateTurnOffThyristor(GTOs)appearedshortlyaftertheadventofthyristors.TeachingResourcesDatabaseof

NationalVocationalEducationPowerSupplyTechnologyBilingualcourses.Thanksforwatching謝謝觀看-更多內(nèi)容，敬請(qǐng)關(guān)注國家級(jí)供用電技術(shù)專業(yè)教學(xué)資源庫-Formoreinformation,pleasepayattentiontotheTeachingResourcesDatabaseof

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