半導(dǎo)體工藝詞匯

半導(dǎo)體工藝詞匯Scrubb【化學(xué)】(使)(氣體)凈化；(從氣體中)分離出，提出。Regulator校準(zhǔn)者；【機(jī)械工程】調(diào)整器，校準(zhǔn)器，調(diào)節(jié)器；【無(wú)線電】穩(wěn)定器；【化學(xué)】調(diào)節(jié)劑；【代】調(diào)節(jié)基因；(鐘表的)整時(shí)器；標(biāo)準(zhǔn)鐘Purge變清凈。AAbruptjunction突變結(jié)Acceleratedtesting加速實(shí)驗(yàn)

Acceptor受主Acceptoratom受主原子

Accumulation積累、堆積Accumulatingcontact積累接觸

Accumulationregion積累區(qū)Accumulationlayer積累層

Activeregion有源區(qū)Activecomponent有源元

Activedevice有源器件Activation激活

Activationenergy激活能Activeregion有源（放大）區(qū)

Admittance導(dǎo)納Allowedband允帶

Alloy-junctiondevice合金結(jié)器件Aluminum(Aluminium)鋁

Aluminum–oxide鋁氧化物Aluminumpassivation鋁鈍化Ambipolar雙極的Ambienttemperature環(huán)境溫度

Amorphous無(wú)定形的，非晶體的Amplifier功放擴(kuò)音器放大器

Analogue(Analog)comparator模擬比較器Angstrom埃Anneal退火Anisotropic各向異性的

Anode陽(yáng)極Arsenic(AS)砷Auger俄歇Augerprocess俄歇過(guò)程

Avalanche雪崩Avalanchebreakdown雪崩擊穿

Avalancheexcitation雪崩激發(fā)B

Backgroundcarrier本底載流子Backgrounddoping本底摻雜

Backward反向Backwardbias反向偏置

Ballastingresistor整流電阻Ballbond球形鍵合

Band能帶Bandgap能帶間隙

Barrier勢(shì)壘Barrierlayer勢(shì)壘層

Barrierwidth勢(shì)壘寬度Base基極

Basecontact基區(qū)接觸Basestretching基區(qū)擴(kuò)展效應(yīng)

Basetransittime基區(qū)渡越時(shí)間Basetransportefficiency基區(qū)輸運(yùn)系數(shù)

Base-widthmodulation基區(qū)寬度調(diào)制Basisvector基矢

Bias偏置Bilateralswitch雙向開(kāi)關(guān)

Binarycode二進(jìn)制代碼Binarycompoundsemiconductor二元化合物半導(dǎo)體

Bipolar雙極性的BipolarJunctionTransistor(BJT)雙極晶體管

Bloch布洛赫Blockingband阻擋能帶

Blockingcontact阻擋接觸Body-centered體心立方Body-centredcubicstructure體立心結(jié)構(gòu)Boltzmann波爾茲曼

Bond鍵、鍵合Bondingelectron價(jià)電子

Bondingpad鍵合點(diǎn)Bootstrapcircuit自舉電路

Bootstrappedemitterfollower自舉射極跟隨器Boron硼

Borosilicateglass硼硅玻璃Boundarycondition邊界條件

Boundelectron束縛電子Breadboard模擬板、實(shí)驗(yàn)板

Breakdown擊穿Breakover轉(zhuǎn)折

Brillouin布里淵Brillouinzone布里淵區(qū)

Built-in內(nèi)建的Build-inelectricfield內(nèi)建電場(chǎng)

Bulk體/體內(nèi)Bulkabsorption體吸收

Bulkgeneration體產(chǎn)生Bulkrecombination體復(fù)合

Burn-in老化Burnout燒毀

Buriedchannel埋溝Burieddiffusionregion隱埋擴(kuò)散區(qū)

C

Can外殼Capacitance電容

Capturecrosssection俘獲截面Capturecarrier俘獲載流子

Carrier載流子、載波Carrybit進(jìn)位位

Carry-inbit進(jìn)位輸入Carry-outbit進(jìn)位輸出

Cascade級(jí)聯(lián)Case管殼

Cathode陰極Center中心

Ceramic陶瓷（的）Channel溝道

Channelbreakdown溝道擊穿Channelcurrent溝道電流

Channeldoping溝道摻雜Channelshortening溝道縮短

Channelwidth溝道寬度Characteristicimpedance特征阻抗

Charge電荷、充電Charge-compensationeffects電荷補(bǔ)償效應(yīng)

Chargeconservation電荷守恒Chargeneutralitycondition電中性條件

Chargedrive/exchange/sharing/transfer/storage電荷驅(qū)動(dòng)/交換/共享/轉(zhuǎn)移/存儲(chǔ)

Chemmicaletching化學(xué)腐蝕法Chemically-Polish化學(xué)拋光

Chemmically-MechanicallyPolish(CMP)化學(xué)機(jī)械拋光Chip芯片

Chipyield芯片成品率Clamped箝位

Clampingdiode箝位二極管Cleavageplane解理面

Clockrate時(shí)鐘頻率Clockgenerator時(shí)鐘發(fā)生器

Clockflip-flop時(shí)鐘觸發(fā)器Close-packedstructure密堆積結(jié)構(gòu)

Close-loopgain閉環(huán)增益Collector集電極

Collision碰撞CompensatedOP-AMP補(bǔ)償運(yùn)放

Common-base/collector/emitterconnection共基極/集電極/發(fā)射極連接

Common-gate/drain/sourceconnection共柵/漏/源連接

Common-modegain共模增益Common-modeinput共模輸入

Common-moderejectionratio(CMRR)共模抑制比

Compatibility兼容性Compensation補(bǔ)償

Compensatedimpurities補(bǔ)償雜質(zhì)Compensatedsemiconductor補(bǔ)償半導(dǎo)體

ComplementaryDarlingtoncircuit互補(bǔ)達(dá)林頓電路

ComplementaryMetal-Oxide-SemiconductorField-Effect-Transistor(CMOS)互補(bǔ)金屬氧化物半導(dǎo)體場(chǎng)效應(yīng)晶體管

Complementaryerrorfunction余誤差函數(shù)

Computer-aideddesign(CAD)/test(CAT)/manufacture(CAM)計(jì)算機(jī)輔助設(shè)計(jì)/測(cè)試/制造

CompoundSemiconductor化合物半導(dǎo)體Conductance電導(dǎo)

Conductionband(edge)導(dǎo)帶(底)Conductionlevel/state導(dǎo)帶態(tài)

Conductor導(dǎo)體Conductivity電導(dǎo)率

Configuration組態(tài)Conlomb庫(kù)侖

ConpledConfigurationDevices結(jié)構(gòu)組態(tài)Constants物理常數(shù)

Constantenergysurface等能面Constant-sourcediffusion恒定源擴(kuò)散

Contact接觸Contamination治污

Continuityequation連續(xù)性方程Contacthole接觸孔

Contactpotential接觸電勢(shì)Continuitycondition連續(xù)性條件

Contradoping反摻雜Controlled受控的

Converter轉(zhuǎn)換器Conveyer傳輸器

Copperinterconnectionsystem銅互連系統(tǒng)Couping耦合

Covalent共階的Crossover跨交

Critical臨界的Crossunder穿交

Crucible坩堝Crystaldefect/face/orientation/lattice晶體缺陷/晶面/晶向/晶格Currentdensity電流密度Curvature曲率Cutoff截止Currentdrift/dirve/sharing電流漂移/驅(qū)動(dòng)/共享

CurrentSense電流取樣Curvature彎曲

Customintegratedcircuit定制集成電路Cylindrical柱面的

Czochralshicrystal直立單晶

Czochralskitechnique切克勞斯基技術(shù)（Cz法直拉晶體J）

D

Danglingbonds懸掛鍵Darkcurrent暗電流

Deadtime空載時(shí)間Debyelength德拜長(zhǎng)度

De.broglie德布洛意Decderate減速

Decibel(dB)分貝Decode譯碼

Deepacceptorlevel深受主能級(jí)Deepdonorlevel深施主能級(jí)

Deepimpuritylevel深度雜質(zhì)能級(jí)Deeptrap深陷阱

Defeat缺陷

Degeneratesemiconductor簡(jiǎn)并半導(dǎo)體Degeneracy簡(jiǎn)并度

Degradation退化DegreeCelsius(centigrade)/Kelvin攝氏/開(kāi)氏溫度

Delay延遲Density密度

Densityofstates態(tài)密度Depletion耗盡

Depletionapproximation耗盡近似Depletioncontact耗盡接觸

Depletiondepth耗盡深度Depletioneffect耗盡效應(yīng)

Depletionlayer耗盡層DepletionMOS耗盡MOS

Depletionregion耗盡區(qū)Depositedfilm淀積薄膜

Depositionprocess淀積工藝Designrules設(shè)計(jì)規(guī)則

Die芯片（復(fù)數(shù)dice）Diode二極管Dielectric介電的Dielectricisolation介質(zhì)隔離

Difference-modeinput差模輸入Differentialamplifier差分放大器

Differentialcapacitance微分電容Diffusedjunction擴(kuò)散結(jié)

Diffusion擴(kuò)散Diffusioncoefficient擴(kuò)散系數(shù)

Diffusionconstant擴(kuò)散常數(shù)Diffusivity擴(kuò)散率

Diffusioncapacitance/barrier/current/furnace擴(kuò)散電容/勢(shì)壘/電流/爐

Digitalcircuit數(shù)字電路Dipoledomain偶極疇

Dipolelayer偶極層Direct-coupling直接耦合

Direct-gapsemiconductor直接帶隙半導(dǎo)體Directtransition直接躍遷

Discharge放電Discretecomponent分立元件

Dissipation耗散Distribution分布

Distributedcapacitance分布電容Distributedmodel分布模型

Displacement位移Dislocation位錯(cuò)

Domain疇Donor施主

Donorexhaustion施主耗盡Dopant摻雜劑

Dopedsemiconductor摻雜半導(dǎo)體Dopingconcentration摻雜濃度

Double-diffusiveMOS(DMOS)雙擴(kuò)散MOS.Drift漂移Driftfield漂移電場(chǎng)

Driftmobility遷移率Dryetching干法腐蝕

Dry/wetoxidation干/濕法氧化Dose劑量

Dutycycle工作周期Dual-in-linepackage（DIP）雙列直插式封裝

Dynamics動(dòng)態(tài)Dynamiccharacteristics動(dòng)態(tài)屬性

Dynamicimpedance動(dòng)態(tài)阻抗

E

Earlyeffect厄利效應(yīng)Earlyfailure早期失效

Effectivemass有效質(zhì)量Einsteinrelation(ship)愛(ài)因斯坦關(guān)系

ElectricEraseProgrammableReadOnlyMemory(E2PROM)一次性電可擦除只讀存儲(chǔ)器

Electrode電極Electrominggratim電遷移

Electronaffinity電子親和勢(shì)Electronic-grade電子能

Electron-beamphoto-resistexposure光致抗蝕劑的電子束曝光

Electrongas電子氣Electron-gradewater電子級(jí)純水

Electrontrappingcenter電子俘獲中心ElectronVolt(eV)電子伏

Electrostatic靜電的Element元素/元件/配件

Elementalsemiconductor元素半導(dǎo)體Ellipse橢圓

Ellipsoid橢球Emitter發(fā)射極

Emitter-coupledlogic發(fā)射極耦合邏輯Emitter-coupledpair發(fā)射極耦合對(duì)

Emitterfollower射隨器Emptyband空帶

Emittercrowdingeffect發(fā)射極集邊（擁擠）效應(yīng)

Endurancetest=lifetest壽命測(cè)試Energystate能態(tài)Energymomentumdiagram能量-動(dòng)量(E-K)圖Enhancementmode增強(qiáng)型模式

EnhancementMOS增強(qiáng)性MOSEntefic(低)共溶的

Environmentaltest環(huán)境測(cè)試Epitaxial外延的

Epitaxiallayer外延層Epitaxialslice外延片

Expitaxy外延Equivalentcurcuit等效電路

Equilibriummajority/minoritycarriers平衡多數(shù)/少數(shù)載流子

ErasableProgrammableROM(EPROM)可擦?。ň幊蹋┐鎯?chǔ)器

Errorfunctioncomplement余誤差函數(shù)

Etch刻蝕Etchant刻蝕劑

Etchingmask抗蝕劑掩模Excesscarrier過(guò)剩載流子

Excitationenergy激發(fā)能Excitedstate激發(fā)態(tài)

Exciton激子Extrapolation外推法

Extrinsic非本征的Extrinsicsemiconductor雜質(zhì)半導(dǎo)體

F

Face-centered面心立方Falltime下降時(shí)間

Fan-in扇入Fan-out扇出

Fastrecovery快恢復(fù)Fastsurfacestates快界面態(tài)

Feedback反饋Fermilevel費(fèi)米能級(jí)

Fermi-DiracDistribution費(fèi)米-狄拉克分布Femipotential費(fèi)米勢(shì)

Fickequation菲克方程（擴(kuò)散）Fieldeffecttransistor場(chǎng)效應(yīng)晶體管

Fieldoxide場(chǎng)氧化層Filledband滿帶

Film薄膜Flashmemory閃爍存儲(chǔ)器Flatband平帶Flatpack扁平封裝

Flickernoise閃爍（變）噪聲Flip-floptoggle觸發(fā)器翻轉(zhuǎn)

Floatinggate浮柵Fluorideetch氟化氫刻蝕

Forbiddenband禁帶Forwardbias正向偏置Forwardblocking/conducting正向阻斷/導(dǎo)通

Frequencydeviationnoise頻率漂移噪聲

Frequencyresponse頻率響應(yīng)Function函數(shù)G

Gain增益Gallium-Arsenide(GaAs)砷化鉀

Gamyrayr射線Gate門、柵、控制極

Gateoxide柵氧化層Gauss（ian）高斯

Gaussiandistributionprofile高斯摻雜分布Generation-recombination產(chǎn)生-復(fù)合

Geometries幾何尺寸Germanium(Ge)鍺

Graded緩變的Graded(gradual)channel緩變溝道

Gradedjunction緩變結(jié)Grain晶粒

Gradient梯度Grownjunction生長(zhǎng)結(jié)Guardring保護(hù)環(huán)Gummel-Poommodel葛謀-潘模型Gunn-effect狄氏效應(yīng)H

Hardeneddevice輻射加固器件Heatofformation形成熱

Heatsink散熱器、熱沉Heavy/lightholeband重/輕空穴帶

Heavysaturation重?fù)诫sHell-effect霍爾效應(yīng)

Heterojunction異質(zhì)結(jié)Heterojunctionstructure異質(zhì)結(jié)結(jié)構(gòu)

HeterojunctionBipolarTransistor（HBT）異質(zhì)結(jié)雙極型晶體

Highfieldproperty高場(chǎng)特性High-performanceMOS.(H-MOS)高性能MOS.Hormalized歸一化

Horizontalepitaxialreactor臥式外延反應(yīng)器Hotcarrior熱載流子Hybridintegration混合集成

I

Image-force鏡象力Impactionization碰撞電離Impedance阻抗Imperfectstructure不完整結(jié)構(gòu)

Implantationdose注入劑量Implantedion注入離子

Impurity雜質(zhì)Impurityscattering雜志散射

Incrementalresistance電阻增量（微分電阻）In-contactmask接觸式掩模

Indiumtinoxide(ITO)銦錫氧化物Inducedchannel感應(yīng)溝道

Infrared紅外的Injection注入

Inputoffsetvoltage輸入失調(diào)電壓Insulator絕緣體

InsulatedGateFET(IGFET)絕緣柵FETIntegratedinjectionlogic集成注入邏輯Integration集成、積分Interconnection互連

Interconnectiontimedelay互連延時(shí)Interdigitatedstructure交互式結(jié)構(gòu)

Interface界面Interference干涉

Internationalsystemofunions國(guó)際單位制Internallyscattering谷間散射Interpolation內(nèi)插法Intrinsic本征的

Intrinsicsemiconductor本征半導(dǎo)體Inverseoperation反向工作

Inversion反型Inverter倒相器

Ion離子Ionbeam離子束

Ionetching離子刻蝕Ionimplantation離子注入

Ionization電離Ionizationenergy電離能

Irradiation輻照Isolationland隔離島

Isotropic各向同性

J

JunctionFET(JFET)結(jié)型場(chǎng)效應(yīng)管Junctionisolation結(jié)隔離

Junctionspacing結(jié)間距Junctionside-wall結(jié)側(cè)壁

Latchup閉鎖Lateral橫向的

Lattice晶格Layout版圖

Latticebinding/cell/constant/defect/distortion晶格結(jié)合力/晶胞/晶格/晶格常數(shù)/晶格缺陷/晶格畸變

Leakagecurrent（泄）漏電流Levelshifting電平移動(dòng)

Lifetime壽命linearity線性度

Linkedbond共價(jià)鍵LiquidNitrogen液氮Liquid－phaseepitaxialgrowthtechnique液相外延生長(zhǎng)技術(shù)

Lithography光刻LightEmittingDiode(LED)發(fā)光二極管

LoadlineorVariable負(fù)載線LocatingandWiring布局布線

Longitudinal縱向的Logicswing邏輯擺幅

Lorentz洛淪茲Lumpedmodel集總模型

M

Majoritycarrier多數(shù)載流子Mask掩膜板，光刻板

Masklevel掩模序號(hào)Maskset掩模組

Mass-actionlaw質(zhì)量守恒定律Master-slaveDflip-flop主從D觸發(fā)器

Matching匹配Maxwell麥克斯韋Meanfreepath平均自由程Meanderedemitterjunction梳狀發(fā)射極結(jié)

Meantimebeforefailure(MTBF)平均工作時(shí)間

Megeto-resistance磁阻Mesa臺(tái)面

MESFET-MetalSemiconductor金屬半導(dǎo)體FET

Metallization金屬化Microelectronictechnique微電子技術(shù)

Microelectronics微電子學(xué)Millenindices密勒指數(shù)

Minoritycarrier少數(shù)載流子Misfit失配

Mismatching失配Mobileions可動(dòng)離子

Mobility遷移率Module模塊

Modulate調(diào)制Molecularcrystal分子晶體

MonolithicIC單片ICMOSFET金屬氧化物半導(dǎo)體場(chǎng)效應(yīng)晶體管Mos.Transistor(MOST)MOS.晶體管Multiplication倍增Modulator調(diào)制Multi-chipIC多芯片IC

Multi-chipmodule(MCM)多芯片模塊Multiplicationcoefficient倍增因子

N

Nakedchip未封裝的芯片（裸片）Negativefeedback負(fù)反饋

Negativeresistance負(fù)阻Nesting套刻

Negative-temperature-coefficient負(fù)溫度系數(shù)Noisemargin噪聲容限

Nonequilibrium非平衡Nonrolatile非揮發(fā)（易失）性Normallyoff/on常閉/開(kāi)Numericalanalysis數(shù)值分析

O

Occupiedband滿帶Officienay功率

Offset偏移、失調(diào)Onstandby待命狀態(tài)

Ohmiccontact歐姆接觸Opencircuit開(kāi)路

Operatingpoint工作點(diǎn)Operatingbias工作偏置

Operationalamplifier(OPAMP)運(yùn)算放大器

Opticalphoton=photon光子Opticalquenching光猝滅

Opticaltransition光躍遷Optical-coupledisolator光耦合隔離器

Organicsemiconductor有機(jī)半導(dǎo)體Orientation晶向、定向

Outline外形Out-of-contactmask非接觸式掩模

Outputcharacteristic輸出特性O(shè)utputvoltageswing輸出電壓擺幅

Overcompensation過(guò)補(bǔ)償Over-currentprotection過(guò)流保護(hù)

Overshoot過(guò)沖Over-voltageprotection過(guò)壓保護(hù)

Overlap交迭Overload過(guò)載

Oscillator振蕩器Oxide氧化物

Oxidation氧化Oxidepassivation氧化層鈍化

Package封裝Pad壓焊點(diǎn)

Parameter參數(shù)Parasiticeffect寄生效應(yīng)

Parasiticoscillation寄生振蕩Passination鈍化

Passivecomponent無(wú)源元件Passivedevice無(wú)源器件

Passivesurface鈍化界面Parasitictransistor寄生晶體管

Peak-pointvoltage峰點(diǎn)電壓Peakvoltage峰值電壓

Permanent-storagecircuit永久存儲(chǔ)電路Period周期

Periodictable周期表Permeable-base可滲透基區(qū)

Phase-lockloop鎖相環(huán)Phasedrift相移

Phononspectra聲子譜Photoconduction光電導(dǎo)Photodiode光電二極管Photoelectriccell光電池

Photoelectriceffect光電效應(yīng)

Photoenicdevices光子器件Photolithographicprocess光刻工藝

(photo)resist（光敏）抗腐蝕劑Pin管腳

Pinchoff夾斷PinningofFermilevel費(fèi)米能級(jí)的釘扎（效應(yīng)）

Planarprocess平面工藝Planartransistor平面晶體管

Plasma等離子體Plezoelectriceffect壓電效應(yīng)Poissonequation泊松方程Pointcontact點(diǎn)接觸

Polarity極性Polycrystal多晶

Polymersemiconductor聚合物半導(dǎo)體Poly-silicon多晶硅Potential(電)勢(shì)Potentialbarrier勢(shì)壘

Potentialwell勢(shì)阱Powerdissipation功耗Powertransistor功率晶體管Preamplifier前置放大器

Primaryflat主平面Principalaxes主軸

Print-circuitboard(PCB)印制電路板Probability幾率

Probe探針Process工藝

Propagationdelay傳輸延時(shí)Pseudopotentialmethod膺勢(shì)發(fā)

Punchthrough穿通Pulsetriggering/modulating脈沖觸發(fā)/調(diào)制PulseWidenModulator(PWM)脈沖寬度調(diào)制

Punchthrough穿通Push-pullstage推挽級(jí)

Q

Qualityfactor品質(zhì)因子Quantization量子化

Quantum量子Quantumefficiency量子效應(yīng)

Quantummechanics量子力學(xué)Quasi–Fermi－level準(zhǔn)費(fèi)米能級(jí)

Quartz石英

R

Radiationconductivity輻射電導(dǎo)率Radiationdamage輻射損傷

Radiationfluxdensity輻射通量密度Radiationhardening輻射加固

Radiationprotection輻射保護(hù)Radiative-recombination輻照復(fù)合

Radioactive放射性Reachthrough穿通

Reactivesputteringsource反應(yīng)濺射源Readdiode里德二極管

Recombination復(fù)合Recoverydiode恢復(fù)二極管Reciprocallattice倒核子Recoverytime恢復(fù)時(shí)間Rectifier整流器（管）Rectifyingcontact整流接觸

Reference基準(zhǔn)點(diǎn)基準(zhǔn)參考點(diǎn)Refractiveindex折射率

Register寄存器Registration對(duì)準(zhǔn)

Regulate控制調(diào)整Relaxationlifetime馳豫時(shí)間

Reliability可靠性Resonance諧振

Resistance電阻Resistor電阻器

Resistivity電阻率Regulator穩(wěn)壓管（器）

Relaxation馳豫Resonantfrequency共射頻率

Responsetime響應(yīng)時(shí)間Reverse反向的

Reversebias反向偏置

SSamplingcircuit取樣電路Sapphire藍(lán)寶石（Al2O3）

Satellitevalley衛(wèi)星谷Saturatedcurrentrange電流飽和區(qū)

Saturationregion飽和區(qū)Saturation飽和的

Scaleddown按比例縮小Scattering散射Schockleydiode肖克萊二極管Schottky肖特基

Schottkybarrier肖特基勢(shì)壘Schottkycontact肖特基接觸

Schrodingen薛定厄Scribinggrid劃片格

Secondaryflat次平面

Seedcrystal籽晶Segregation分凝

Selectivity選擇性Selfaligned自對(duì)準(zhǔn)的

Selfdiffusion自擴(kuò)散Semiconductor半導(dǎo)體

Semiconductor-controlledrectifier可控硅Sensitivity靈敏度

Serial串行/串聯(lián)Seriesinductance串聯(lián)電感

Settletime建立時(shí)間Sheetresistance薄層電阻

Shield屏蔽Shortcircuit短路

Shotnoise散粒噪聲Shunt分流Sidewallcapacitance邊墻電容Signal信號(hào)

Silicaglass石英玻璃Silicon硅

Siliconcarbide碳化硅Silicondioxide(SiO2)二氧化硅SiliconNitride(Si3N4)氮化硅SiliconOnInsulator絕緣硅

Siliverwhiskers銀須Simplecubic簡(jiǎn)立方

Singlecrystal單晶Sink沉

Skineffect趨膚效應(yīng)Snaptime急變時(shí)間

Sneakpath潛行通路Sulethreshold亞閾的

Solarbattery/cell太陽(yáng)能電池Solidcircuit固體電路

SolidSolubility固溶度Sonband子帶

Source源極Sourcefollower源隨器

Spacecharge空間電荷Specificheat(PT)熱Speed-powerproduct速度功耗乘積Spherical球面的

Spin自旋Split分裂

Spontaneousemission自發(fā)發(fā)射Spreadingresistance擴(kuò)展電阻

Sputter濺射Stackingfault層錯(cuò)

Staticcharacteristic靜態(tài)特性St