GB/T 44919-2024微機(jī)電系統(tǒng)(MEMS)技術(shù)薄膜力學(xué)性能的鼓脹試驗(yàn)方法

ICS

31.080.99

CCS

L59

中華人民共和國(guó)國(guó)家標(biāo)準(zhǔn)

GB/T44919—2024/IEC62047?17:2015

微機(jī)電系統(tǒng)（MEMS）技術(shù)

薄膜力學(xué)性能的鼓脹試驗(yàn)方法

Micro-electromechanicalsystems(MEMS)technology—

Bulgetestmethodformeasuringmechanical

propertiesofthinfilms

（IEC62047-17:2015,Semiconductordevices—Micro-electromechanical

devices—Part17:Bulgetestmethodformeasuring

mechanicalpropertiesofthinfilms,IDT）

2024-11-28發(fā)布2024-11-28實(shí)施

國(guó)家市場(chǎng)監(jiān)督管理總局發(fā)布

國(guó)家標(biāo)準(zhǔn)化管理委員會(huì)

GB/T44919—2024/IEC62047?17:2015

目次

1

范圍

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1

2

規(guī)范性引用文件

······················································································

1

3

術(shù)語(yǔ)、定義和符號(hào)

····················································································

1

3.1

術(shù)語(yǔ)和定義

······················································································

1

3.2

符號(hào)

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2

4

鼓脹測(cè)試原理

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2

5

測(cè)試裝置和測(cè)試環(huán)境

·················································································

3

5.1

通則

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3

5.2

裝置

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3

5.3

測(cè)試環(huán)境

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4

6

試樣

··································································································

4

6.1

通則

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4

6.2

試樣形狀和尺寸

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4

6.3

試樣尺寸測(cè)量

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5

7

測(cè)試程序和分析

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5

7.1

測(cè)試程序

·························································································

5

7.2

數(shù)據(jù)分析

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6

8

測(cè)試報(bào)告

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7

附錄A（資料性）力學(xué)特性的測(cè)定

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8

A.1

概述

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8

A.2

使用應(yīng)力?應(yīng)變曲線測(cè)定力學(xué)特性

·······························································

8

A.3

使用荷載?撓度分析測(cè)定力學(xué)特性

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9

附錄B（資料性）形變測(cè)量技術(shù)

·····································································

11

B.1

概述

····························································································

11

B.2

激光干涉技術(shù)

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11

B.3

電容式測(cè)量

·····················································································

11

附錄C（資料性）試樣制造示例：MEMS工藝

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16

C.1

試樣制造

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16

C.2

試樣形狀測(cè)量

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16

參考文獻(xiàn)

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17

Ⅰ

GB/T44919—2024/IEC62047?17:2015

前言

本文件按照GB/T1.1—2020《標(biāo)準(zhǔn)化工作導(dǎo)則

第1部分：標(biāo)準(zhǔn)化文件的結(jié)構(gòu)和起草規(guī)則》的規(guī)

定起草。

本文件等同采用IEC62047?17:2015《半導(dǎo)體器件

微機(jī)電器件

第17部分：薄膜機(jī)械性能的打壓

試驗(yàn)方法》。

本文件做了下列最小限度的編輯性改動(dòng)：

—為與現(xiàn)有標(biāo)準(zhǔn)協(xié)調(diào)，將標(biāo)準(zhǔn)名稱改為《微機(jī)電系統(tǒng)（MEMS）技術(shù)

薄膜力學(xué)性能的鼓脹試驗(yàn)

方法》；

—更正了國(guó)際標(biāo)準(zhǔn)中的印刷錯(cuò)誤，將6.1中參考“附錄B”改為“附錄C”。

請(qǐng)注意本文件的某些內(nèi)容可能涉及專利。本文件的發(fā)布機(jī)構(gòu)不承擔(dān)識(shí)別專利的責(zé)任。

本文件由全國(guó)微機(jī)電技術(shù)標(biāo)準(zhǔn)化技術(shù)委員會(huì)（SAC/TC336）提出并歸口。

本文件起草單位：中國(guó)科學(xué)院微電子研究所、中機(jī)生產(chǎn)力促進(jìn)中心有限公司、蘇州容啟傳感器科技

有限公司、武漢大學(xué)、北京大學(xué)、昆山昆博智能感知產(chǎn)業(yè)技術(shù)研究院有限公司、蘇州晶方半導(dǎo)體科技股

份有限公司、蘇州慧聞納米科技有限公司、工業(yè)和信息化部電子第五研究所、深圳市美思先端電子有限

公司、東南大學(xué)、芯聯(lián)集成電路制造股份有限公司、中關(guān)村光電產(chǎn)業(yè)協(xié)會(huì)、華東電子工程研究所（中國(guó)

電子科技集團(tuán)公司第三十八研究所）、上海交通大學(xué)、明石創(chuàng)新（煙臺(tái)）微納傳感技術(shù)研究院有限公

司、武漢高德紅外股份有限公司。

本文件主要起草人：周維虎、李根梓、孫宏霖、劉勝、霍樹春、高成臣、焦斌斌、陳立國(guó)、楊劍宏、

張平平、陳志文、陳思、馬龍全、黃慶安、聶萌、謝紅梅、陳曉梅、盧永紅、張紅旗、劉景全、高峰、

黃晟。

Ⅲ

GB/T44919—2024/IEC62047?17:2015

微機(jī)電系統(tǒng)（MEMS）技術(shù)

薄膜力學(xué)性能的鼓脹試驗(yàn)方法

1范圍

本文件描述了窗口薄膜的鼓脹測(cè)試方法。試樣由微米/納米結(jié)構(gòu)薄膜材料制備，包括金屬、陶瓷和

聚合物等薄膜，用于微機(jī)電系統(tǒng)（MEMS）、微機(jī)械等領(lǐng)域。薄膜厚度范圍為0.1μm～10μm。正方形

和長(zhǎng)方形窗口寬度范圍0.5mm～4mm，圓形窗口直徑范圍0.5mm～4mm。

本文件適用于常溫環(huán)境條件下，對(duì)窗口薄膜試樣施加均勻壓力進(jìn)行彈性模量和殘余應(yīng)力測(cè)