irf中文數(shù)據(jù)手冊要點

1、Thrench 工藝綜述SYMBOLQUICK REFERENCE DATAvcss = 100 vl3 = 23 AR芷QI4 - 7了IRF540 N 溝道 MOS管特性低的導(dǎo)通內(nèi)阻 快速開關(guān) 低熱敏電阻使用溝渠工藝封裝的N通道增強型場效應(yīng)功率晶體管應(yīng)用:DC到DC轉(zhuǎn)換器開關(guān)電源電視及電腦顯示器電源IRF540中提供的是 SOT78(TO220AB)常規(guī)鉛的包裹。IRF540S中提供的是SOT404(D PAK)表面安裝的包裹。管腳管腳描述1Gate2Drain3SourceTabDrainSOT78 (TO220AB)SOT404 (DPAK)匚1r i1*3w13極限值系統(tǒng)絕對最大值依

2、照限制值符號參數(shù)條件最小值最大值單位V_DSS漏源極電壓Tj= 25 ?C to 175?C-100VV_DGR漏門極電壓Tj = 25 ?C to 175?C;-100VV_GS門源極電壓RGS = 20 k?-士 20VI_D連續(xù)漏電流Tmb = 25 ?C; VGS = 10 V-23AI_DM脈沖漏電流Tmb = 100 ?C; VGS = 10 V-16AP_D總功耗Tmb = 25 ?C-92ATj，Tsig操作點和Tmb = 25 ?C-100W存儲溫度-55175C雪崩能量極限值符號參數(shù)條件最小值最大值單位非重復(fù)性雪 崩能量最大非重復(fù) 性雪崩電流Un clamped in du

3、ctive load, IAS = 10 A; tp = 350羽rTOr to avalanche = 25?C;VDD W 25 V; RGS = 50 ?; VGS = 10 V; refer to fig:14-23023mJA熱敏電阻符號參數(shù)條件最小值典型值最大值單位安裝底座交界處的熱阻周圍環(huán)境熱阻SOT78封裝，自由空間SOT404 封裝，PCB 上-60501.5K/WK/WK/W電特性25 C除非另有說明符號參數(shù)條件最小值典型值最大值單位漏源極崩潰電壓VGS =0V ; I D =0.25mA100-V門閥電壓Tj =-55?C89-VVds = Vgs ; ID = 1 mA

4、234V漏源極導(dǎo)通電阻Tj =Tj =175?C-55?C1-6VV向前跨導(dǎo)Vgs = 10 V; ID = 17 A-4977m Q門源極泄漏電流Tj =175?C8.7132193m Q0門極電壓漏電流Vds=25V; Id=17A15.5-SVgs = 20 V; Vds =0V-10100nAVDS = 100 V; VGS = 0 V-0.0510uAVDS=80V;VGS=0V;Tj= 175?C-250uA總共門極電荷ID = 17 A-65nC門源極電荷VDD = 80 V;-10nC門漏極電荷VGS = 10V-29nC開啟延遲時間Vdd = 50 V; Rd = 2.2 ?

5、;-8-ns開啟上沿時間Vdd = 10 V; Rg = 5.6 ?-39-ns關(guān)閉延遲時間Resistive load-26-ns關(guān)閉卜沿時間-24-ns內(nèi)部漏電感Measured tab to centre of die-3.5-nH內(nèi)部漏電感Measured from drain lead to centre-4.5-nH內(nèi)部源極電感of die (SOT78 package only)-7.5-nHMeasured from source lead to sourcebond pad輸入電容Vgs = 0 V; Vds = 25 V; f = 1 MHz-8901187pF輸出電容-139167pF反饋電容-83109pF反向二極管極限值及特性符號參數(shù)條件最小值典型值最大值單位連續(xù)源極電流I F =28A ;-23A脈沖源極電流-92A二極管正向電壓Vgs=0V-0.941.5V反向恢復(fù)之間If =17A ； Vgs=0V;-61-ns反向恢復(fù)命令-200-nC-d IF /dt=100A/us; VR =25V底座溫度-自然功率降低百分比圖1:自然功率損耗 底座溫度-漏電流降低百分比圖2 :自然持續(xù)漏電流 漏源極電壓-脈沖漏極電流峰值圖3 :安全操作區(qū)域 脈寬-瞬態(tài)熱阻抗圖4 :瞬態(tài)熱阻抗 漏源極電壓-漏極電流圖5:典型輸出特性漏極電流-漏源極導(dǎo)通阻抗圖6:典型導(dǎo)通阻