MEMS技術(shù) 第三講 工藝設(shè)計(jì)及版圖設(shè)計(jì)課件

1、MEMSDesignProcess & FlowSystem Requirments Device DesignImplementation Layout SensitivityResponsivityFreq responseLossPower consumptionetcSystem levelsimulation(e.g. opticalsimulation foroptical systems)Transduction mechanismPhysical simulationVerify system requirementAnalytical modelsMacro modelsWh

2、at technology to use?Bulk vs surface micromachiningCustom vs Foundry processMaterials (Si, single crystal, poly,)Process integrationFinite element methodCoupled domain FEM(MEMCAD, ANSYS, IntelliCAD,)Establish technology filesLayers of materials ThicknessDeposition or etching LithographyMask layoutDe

3、sign rulesDesign rule checking (DRC)Cross-section viewSynthesisExport to MEMS CAD器件設(shè)計(jì) 原理 性能 電容原理加速度傳感器？ Substrate passivation and poly ground plane n+ diffusion, 0.5 m thermal oxide, 0.15 m LPCVD nituride 0.3 m phosphorus-doped LPCVD poly Sacrifical layer deposition and patterning Densify and reflow

4、 PSG at 100 , 1 h Timed etch to creat dimples, wet etch Etch anchors, reactive ion etch 2 m LPCVD PSG Structure poly deposition, doping, and anneal 2 m LPCVD poly (undoped), 610 0.3 m PSG on top Symmetric doping occurs during anneal at 1050 in N2 for 1 hourMicrostructure release HF to etch PSG Water

5、 rinse Dry, avoiding surface tension of waterProximity Correction MaskPhase Shift Mask Add one 180 phase shift layer on mask The feature size can achieve about 100 nm First introduce in 1982. New software developed recently.Mask Design Tools AutoCAD L-edit Some simulation tools: MAMSCAD; Intellsense

6、 Link CAD Current runs through loop of released structure (usually polysilicon, “cold arm” with gold layer) Regions with higher current density (“hot arm”) are heated up more and expend more (“pseudo bimorph”)【Bright rt al., U. Colorado】硅tt= lbb21121l22121111322222231112122124732ttTtbEtbEtbEtbEt ttt

7、ra a熱膨脹系數(shù)，熱膨脹系數(shù)，t t厚度，厚度，b b寬度寬度金屬層加熱膜硅進(jìn)口出口加熱層加熱電阻蠕動(dòng)膜流道入口出口圖4-331 熱氣動(dòng)蠕動(dòng)泵進(jìn)口出口玻璃玻璃鋁膜硅加熱電阻a)通電線圈LLrrdlIdBB24RIB2022SBF 永磁體金線圈氮化絕緣層入口出口圖4-312 德國的電磁致動(dòng)微型閥例2：外加磁場(chǎng)的磁執(zhí)行器鐵鎳合金線圈導(dǎo)管硅圖4-311外部驅(qū)動(dòng)微機(jī)械電磁閥該閥由一個(gè)NiFe濺射閥座和一個(gè)可開啟、關(guān)閉的可移動(dòng)NiFe閥膜組成。依靠活動(dòng)膜片上支撐彈簧的內(nèi)力，可以制成常開或常閉閥。微機(jī)械閥元件放置于攜帶有流體的管道中，管道的外面是由外加線圈形成的磁場(chǎng)，構(gòu)成了一種電隔離操作79。電磁場(chǎng)光纖

8、a)MEMS驅(qū)動(dòng)器b)圖4-275 電磁驅(qū)動(dòng)光纖開關(guān)原理示意圖 加州理工學(xué)院設(shè)計(jì)的一種電磁驅(qū)動(dòng)光纖開關(guān)的原理示意圖。當(dāng)開關(guān)處于開狀態(tài)時(shí)，電磁驅(qū)動(dòng)器帶著雙面微鏡向上運(yùn)動(dòng)，將微鏡置于光纖之間，每個(gè)輸入光纖的光信號(hào)經(jīng)反射后從相鄰的輸出光纖輸出，如圖4-275a所示；在關(guān)狀態(tài)，微鏡在光纖之下，輸入光纖的信號(hào)直接從正前方的輸出光纖輸出，如圖4-275b所示。 焊盤硅片體硅懸臂梁硅片光阻絕緣體70匝線圈微鏡微鏡表面0.5mm0.5,m4mma)b)7mm1mmc)3mm0.27mm圖4-277 電磁驅(qū)動(dòng)光開關(guān)照片懸臂梁微鏡硅極板該現(xiàn)象如圖2-18所示玻璃硅壓電片(a) 玻璃硅玻璃壓電塊(b)壓電致動(dòng)微型泵

9、 日本東北大學(xué)研制的壓電堆致動(dòng)微泵如圖4-323所示。該微泵依靠致動(dòng)器推動(dòng)薄膜變形，引起腔體內(nèi)壓強(qiáng)的變化，驅(qū)動(dòng)單向閥工作，使氣、液體定向流動(dòng)。壓電堆的軸向變形和驅(qū)動(dòng)力都比較大，最大流量為40L/min，最高背壓為1mH2O。 多晶硅Cr二氧化硅多晶硅形狀記憶合金微泵壓阻式壓電式電容式隧道電流諧振式光電效應(yīng)力學(xué)（加速度/壓力/聲）光（光電類）熱（熱電偶/熱阻）電磁（磁強(qiáng)計(jì)）生物化學(xué)（血糖/電阻化學(xué)/電容化學(xué)/化學(xué)機(jī)械/金屬氧化物）簡要介紹，為以后章節(jié)學(xué)習(xí)提供目的maVVVo壓敏電阻m壓電材料aCfVoma電極解調(diào) Vom振梁ama硅尖加熱電阻熱敏電阻VVVoa氣腔簡要介紹，為以后章節(jié)學(xué)習(xí)提供目的nSdxdysn輸入量的變化輸出量的變化 nnxaxaxaay.2210式中：y：輸出量； x：輸入物理量； ：零位輸出； ：傳感器線性靈敏度； ：待定常數(shù)。0a1anaaa,.,32靈敏度：100mV/g 量程：50g 頻率范圍：0.5-8000Hz（10%) 安裝諧振點(diǎn):30kHz 分辨率：0.