irf中文數(shù)據(jù)手冊要點

1、IRF540 N 溝道 MOS管特性 Thrench '工藝低的導(dǎo)通內(nèi)阻快速開關(guān) 低熱敏電阻綜述SYMBOLQUICK REFERENCE DATAV35S = 10DVlD = 23 A使用溝渠工藝封裝的 N通道增強(qiáng)型場效應(yīng)功率晶體管 應(yīng)用：DC到DC轉(zhuǎn)換器開關(guān)電源電視及電腦顯示器電源IRF540中提供的是SOT78(TO220AB)常規(guī)鉛的包裹。IRF540S中提供的是SOT404(D PAK)表面安裝的包裹。管腳管腳描述1Gate2Drain3SourceTabDrainSOT404 (DJPAK)SOT78 (TO220AB)極限值系統(tǒng)絕對最大值依照限制值符號參數(shù)條件最小值最大

2、值單位V_DSS漏源極電壓Tj= 25 ?C to 175?C-100VV_DGR漏門極電壓Tj = 25 ?C to 175?C;-100VV_GS門源極電壓RGS = 20 k?-士 20VI_D連續(xù)漏電流Tmb = 25 ?C; VGS = 10 V-23AI_DM脈沖漏電流Tmb = 100 ?C; VGS = 10 V-16AP_D總功耗Tmb = 25 ?C-92ATj，Tsig操作點和Tmb = 25 ?C-100W存儲溫度-55175C雪崩能量極限值符號參數(shù)條件最小值最大值單位非重復(fù)性雪 崩能量最大非重復(fù) 性雪崩電流Un clamped in ductive load, IAS

3、 = 10 A; tp = 350sriTjr to avalanche = 25?C;VDD W 25 V; RGS = 50 ?; VGS = 10 V; refer to fig:14-23023mJA熱敏電阻符號參數(shù)條件最小值典型值最大值單位:安裝底座交界SOT78封裝，自由空間-1.5K/W處的熱阻SOT404 封裝，PCB 上-60-K/W周圍環(huán)境熱阻-50-K/W電特性25 C除非另有說明符號參數(shù)條件最小值典型值最大值單位漏源極崩潰電壓VGS =0V ; ID =0.25mA100-VTj = -55?C89V門閥電壓Vds = Vgs ; ID = 1 mA234V漏源極導(dǎo)通電

4、阻Tj = 175?C1-VTj = -55?C6V向前跨導(dǎo)JVGS = 10 V; ID = 17 A-4977mQ門源極泄漏電流Tj = 175?C132193mQ8.70門極電壓漏電流Vds =25V; Id=17A15.5-SVgs = ±20 V; Vds =0V-10100nAVDS = 100 V; VGS = 0 V-0.0510uAVDS=80V;VGS=0V;Tj= 175?C-250uA總共門極電荷ID = 17 A-65nC門源極電荷VDD = 80 V;-10nC門漏極電荷VGS = 10V-29nC開啟延遲時間Vdd = 50 V; Rd = 2.2 ?;

5、-8-ns開啟上沿時間Vdd = 10 V; Rg = 5.6 ?-39-ns關(guān)閉延遲時間Resistive load-26-ns關(guān)閉卜沿時間-24-ns內(nèi)部漏電感Measured tab to centre of die-3.5-nH內(nèi)部漏電感Measured from drain lead to centre-4.5-nH內(nèi)部源極電感of die (SOT78 package only)-7.5-nHMeasured from source lead to sourcebond pad輸入電容VGS = 0 V; VDS = 25 V; f = 1 MHz-8901187pF輸出電容-13

6、9167pF反饋電容-83109pF反向二極管極限值及特性符號參數(shù)條件最小值典型值最大值單位連續(xù)源極電流I F=28A ;-23A脈沖源極電流-92A二極管正向電壓Vgs =0V-0.941.5V反向恢復(fù)之間 反向恢復(fù)命令I(lǐng) f =17A ; Vgs =0V;-61200-ns nC-d lF/dt=100A/us; Vr=25V底座溫度-自然功率降低百分比圖1:自然功率損耗 底座溫度-漏電流降低百分比圖2 :自然持續(xù)漏電流 漏源極電壓-脈沖漏極電流峰值圖3 :安全操作區(qū)域 脈寬-瞬態(tài)熱阻抗圖4 :瞬態(tài)熱阻抗 漏源極電壓-漏極電流圖5:典型輸出特性漏極電流-漏源極導(dǎo)通阻抗圖6:典型導(dǎo)通阻抗圖7: