IRF540中文數(shù)據(jù)手冊(cè)要點(diǎn)

1、IRF540中文數(shù)據(jù)手冊(cè)要點(diǎn)IRF540N溝道MOS管特性SYMBOLQUICKREFERENCEDATAVD55=100VI-=23A了7mQThrench工藝低的導(dǎo)通內(nèi)阻快速開關(guān)低熱敏電阻綜述使用溝渠工藝封裝的N通道增強(qiáng)型場(chǎng)效應(yīng)功率晶體管應(yīng)用：DC到DC轉(zhuǎn)換器開關(guān)電源電視及電腦顯示器電源IRF540中提供的是SOT78(TO220AB)常規(guī)鉛的包裹。IRF540S中提供的是SOT404(DPAK)表面安裝的包裹。管腳管腳描述1Gate2Drain3SourceTabDrainHbJ(V:I3HSOT7B(TO220AB)極限值系統(tǒng)絕對(duì)最大值依照限制值符號(hào)參數(shù)條件最小值最大值單位V_DSS漏

2、源極電壓Tj=25?Cto175?C-100VV_DGR漏門極電壓Tj=25?Cto175?C;-100VV_GS門源極電壓RGS=20k?-士20VI_D連續(xù)漏電流-23ATmb=25?C;VGS=10V-16AI_DM脈沖漏電流Tmb=100?C;VGS=10V-92AP_D總功耗Tmb=25?C-100WTj,Tsig操作點(diǎn)和存儲(chǔ)溫度Tmb=25?C-55175C雪崩能量極限值符號(hào)參數(shù)條件最小值最大值單位Eas1AS非重復(fù)性Unclampedinductiveload,IAS=10A;-230mJ雪崩能量最大tp=350s;Tjpriortoavalanche=25?C;VDD25V;R

3、GS23A非重復(fù)性雪崩電流=50?;VGS=10V;refertofig:14熱敏電阻付號(hào)參數(shù)條件最小值典型值最大值單位RthjmbRthja1安裝底座交界處的熱阻周圍環(huán)境熱阻SOT78封裝，自由空間SOT404封裝，PCB上-60501.5K/WK/WK/W電特性25C除非另有說(shuō)明符參數(shù)條件典單位1|號(hào)11小值/、型值大值V(BR)DSSVgS(TO)RDS(ON)gfs1GSS1DSS漏源極朋潰電壓門閥電壓漏源極Vgs=0V；iD=0.25mATj=-55?CVds=Vgs；ID=1mATj=175?CTj=-55?CVgs=10V；ID=17ATj=175?CVds=25V;Id=17A

4、Vgs=20V;Vds=0Vvds=100V;vgs=0VVDS=80V;VGS=0V;Tj=仃5?C10089218.7S61124677930010!50VVVVV mQmQSnAuAuA導(dǎo)通電阻向前跨導(dǎo)門源極泄漏電流0門極電壓漏電流Qg(tot)總ID=17A-65nCQgs共VDD=80V;-10nCQgd門極電荷門VGS=10V29nC源極電荷門漏極電荷Tdon開Vdd=50V；Rd=2.2?;-8-nsTr啟Vdd=10V；Rg:=5.6?-39-nsTdoffTf延遲時(shí)間開啟上沿時(shí)間關(guān)Resistiveload2624nsns閉延遲時(shí)間關(guān)閉下沿時(shí)間LdLd內(nèi)部漏Measuredt

5、abtocentreofdieMeasuredfromdrainlead-3.54.5-nHnHLs電感內(nèi)部漏電感tocentreofdiepackageonly)Measuredfromleadtosourcebondpad(SOT78source7.5nH內(nèi)部源極電感CiSS輸Vgs=0V；Vds=25V;f=1-8901187pFCoSS入MHz-139167pFCrSS電容輸出電容反饋電容83109pF反向二極管極限值及特性符號(hào)參數(shù)條件最小值典型值最大值單位IS1SMVDS連續(xù)源極電流If=28A;Vgs=0V-0.9423921.5AAV脈沖源極電流極管正向電壓trr反#=17A;V

6、gs=0V;-61-nsQrr向恢復(fù)之間反向恢復(fù)命令-diF/dt=100A/us;Vr=25V200nCNormalisedPowerDerating,PD(%)Fig.1.Normalisedpowerdissipation.PD%=100PD/PD25V=f(T)底座溫度-自然功率降低百分比圖1：自然功率損耗0255075100125150175MountingBasetemperature,Tmb(C|Fig.2.Normalisedcontinuousdraincurrent.Q%二100川口站七=（仃趾）；conditions:37。底座溫度-漏電流降低百分比圖2:自然持續(xù)漏電流F

7、ig.3.Safeoperatingarea.Tmb=25CId&IDm=f(VDs)；dsing/P山so:parametertD漏源極電壓-脈沖漏極電流峰值nTransientthermalmpedance,Zth卜mbD=0.50.2:圖3:安全操作區(qū)域；02二Singhktp)=tp/T4fT歸5壬；二?0.02+|f-=丄nIsinglepulseiiiTfiijii1E-061E-051E-04IE-031E-O21E-O11E+00Pulsewidth,tp(s)味寬Fig4Transientthermalimpedance,召卜咖=F;parameterD=t/T脈寬-瞬態(tài)熱阻

8、抗圖4:瞬態(tài)熱阻抗Fig5TypicaloutputcharacteristiGS,T-25CId=f(VDS)漏源極電壓-漏極電流圖5:典型輸出特性Drein-SOLrceOnResistance,RDS(on)(Ohms)Fig.6.Typicalon-stateresistance,7=25CDS(ON)=FQd)漏極電流-漏源極導(dǎo)通阻抗圖6:典型導(dǎo)通阻抗Fig.ZTypicaltransfercharacteristics-Id=f(Vss)圖7:典型傳遞特性圖&典型跨導(dǎo)NormalisedOnstateResistanceFig.9.Normaliseddrain-sourceon-

9、stateresistance.DS(O/DS(ON)25C億丿圖9:漏源極導(dǎo)通阻抗ThresholdV口Itaga,VGS(TO)(V)A-nnaxiirl%彩-ff一j17num-J.3q-一,(VDical_Lrr*、厶寸7-1mininAnum計(jì)斗-0j-12J*1A-U.30-60-40*2002040E080100120140160180JunctionTomporaturo,Tj(C|Fig.10.Gatethresholdvoltage.gs(to)=conditions:iD=1mA;VDS=VGS圖10:門閥電壓Fig.11.Sub-thresholddraincurrent.Id=fWconditions:7；=25C:VD3=%圖11:閾漏極電流Capacitancae.Oise,Coes,Cre宮(pF)Fig.12,Typicalcapacitances,C*C=f(VDS);conditions:VGS=OV;f=1MHz圖12:典型電容值Sdurte-DrainVoltage,VSDS(V)Fig.13.TypicalreversediodecurrentlF=f(VSDS);conditions:論込=0V;parameterTVfis=QV7廠1/i175(r/r丄Ti=?5f/Jjr/F/17*-J/11210