ESD培訓(xùn)手冊(cè)（課件）

1安盛科技

質(zhì)量部TowardsZeroDefectcausedby

ESDTowardsZeroDefectCausedby

ESDESD

培

訓(xùn)

手

冊(cè)2Rev.

1.0ConfidentialPart

I BasicESD

Knowledge第1部分

ESD

基礎(chǔ)知識(shí)TowardsZeroDefectCausedby

ESDESD

介紹3Rev.

1.0ConfidentialWhatisElectrostaticDischarge

(ESD)?Asuddentransferofchargebetweenbodiesatdifferentelectrostatic

potentials.SomeexamplesofESD

are:LightningThe“shock”yousometimesfeelduringwinterwhenyouwalkacrossthecarpetandtouchthedoor

knobThecrackingandsparkswhenyouremoveclothesfromyourdryerESDseemsharmless,butitcandamageelectroniccomponentsandassembliesTowardsZeroDefectCausedby

ESDESD

介紹4Rev.

1.0Confidential什么是靜電放電

Electrostatic

Discharge

(ESD)?不同電勢(shì)物體之間靜電荷的瞬間快速轉(zhuǎn)移。ESD

實(shí)例：閃電在冬天當(dāng)你走過(guò)地毯，接觸門(mén)把手時(shí)可以感覺(jué)到“電擊”當(dāng)脫毛衣時(shí)可以看到的電火花。ESD

看上去是無(wú)害的，但它可以損壞電子器件和部件。TowardsZeroDefectCausedby

ESDESD

介紹5Rev.

1.0ConfidentialTwomainwaysinwhichchargescanbebuilt

up:產(chǎn)生電荷的兩種主要途徑：ByContact&SeparationofMaterials(Triboelectriccharging)接觸和分離材料（摩擦產(chǎn)生電荷）By

Induction感應(yīng)TowardsZeroDefectCausedby

ESD摩擦產(chǎn)生電荷Remaining

charge剩余電荷6Rev.

1.0ConfidentialStepover

ofelectrons電子的轉(zhuǎn)移步驟TowardsZeroDefectCausedby

ESD摩擦產(chǎn)生電荷7Rev.

1.0Confidential

TriboeletricChargingmeanschargegenerationbycontactandseparationoftwoobjectsduetoadifferenceinwork

function摩擦產(chǎn)生電荷指由接觸和分離兩個(gè)不同物體而得到的電荷。Factorsinfluencingthemagnitudeandpolarityof

charging:影響電勢(shì)大小和極性的因素：-surfaceenergy

statesroughnessof

surfacecontact

pressurespeedof

separation表面能量狀態(tài)表面粗糙度接觸壓力分離速度-surfaceconductivity

(resistance)表面導(dǎo)電性（阻抗）-relativehumidity 相對(duì)濕度TowardsZeroDefectCausedby

ESD典型靜電電壓/V8Rev.

1.0ConfidentialEvent

實(shí)例Relative

Hunidity10-20%65-95%Walkingacrossa

carpet350001500在地毯上行走Walkingacrossavinyl

floor12000250在塑料地板上行走M(jìn)otionsofbench

employee6000100在椅子上工作Pickingupplasticpaper

file7000600拿塑料文件夾Pickingupplasticbag200001000拿塑料袋Workingchair

friction180001500拖動(dòng)椅子TowardsZeroDefectCausedby

ESD感應(yīng)產(chǎn)生電荷ChargingbyInduction 感應(yīng)產(chǎn)生電荷ChargingSeparationinaneutralobject正負(fù)電荷在一個(gè)中性物體中分離Chargeflowduringcontacttoground當(dāng)接觸地時(shí)產(chǎn)生放電Remainingchargeafter

separation離開(kāi)地后留存電荷RemainingchargeafterremovingtheChargedjamming

object在移開(kāi)帶電干擾物體后留存電荷9Rev.

1.0Confidential典型的ESD損傷TowardsZeroDefectCausedby

ESDCatastrophic 破壞性的-PartsarecompletelydestroyedasaresultofanESDincident.Thefailureismostoftendiscoveredandrequiredbeforetheinstrumentsis

shippedoutto

customer.器件在一次ESD事件中被完全破壞。這種失效大多可以在送達(dá)客戶前的檢驗(yàn)中發(fā)現(xiàn)。Latent

(Degradation) 潛在的（性能衰退）-ThistypeofdamageoccurswhenanESDonlyweakensthecomponents.ItmaypassinitialtestingbutfailinthefieldORfail

prematurely.這種ESD損壞的發(fā)生僅僅削弱了性能。它可以通過(guò)最初的電性能測(cè)試但會(huì)過(guò)早的在使用中失效。10Rev.

1.0ConfidentialTowardsZeroDefectCausedby

ESDESD

損傷Analysisofnon-conformingordefectivedevicesshowedthat60-75%weredamagedbyEOS(electricaloverstress)orESD.Thisrisesto90%fornewertechnologies.About70%ofthesefailureswereattributedtodamagefromIncorrectlygrounded

people.在對(duì)不良或有缺陷器件的分析顯示，

其中60-75%的損壞來(lái)自于ESD和EOS。在技術(shù)不斷發(fā)展的今天已上升至90%。其中70%的失效源自沒(méi)有正確接地的操作者。ToshikazuNamaguchi,HidekaUchida.EOS/ESDSymposiumEOS-201998pp

245-25111Rev.

1.0ConfidentialTowardsZeroDefectCausedby

ESDESD

失效實(shí)例GateOxidedamageunderPolysilicon多晶硅層下的柵氧化層損傷12Rev.

1.0ConfidentialTowardsZeroDefectCausedby

ESDESD

失效實(shí)例GateOxidedamageunderPolysilicon多晶硅層下的柵氧化層損傷13Rev.

1.0ConfidentialTowardsZeroDefectCausedby

ESDESD

模式14Rev.

1.0Confidential?HumanBodyModel

(HBM)人體模式MachineModel

(MM)機(jī)器模式ChargedDevice

Model充電器件模式TowardsZeroDefectCausedby

ESDHBM

模式15Rev.

1.0ConfidentialHumanBodyModel

(HBM)人體模式Whenachargedindividualtouchesadevice,someofthestoredenergyistransferredordischargedeithertothedeviceorthroughthedeviceto

ground.當(dāng)一個(gè)帶有電荷的個(gè)體接觸器件時(shí)，其儲(chǔ)存的強(qiáng)大的能量就會(huì)轉(zhuǎn)移或放電至這個(gè)器件，或經(jīng)過(guò)這個(gè)器件放電至地。Itispossibletodevelophumanbodypotentialsthatfar

exceeddamageratingsofthe

device人體產(chǎn)生的靜電電壓遠(yuǎn)超過(guò)器件的承受力是完全有可能的.TowardsZeroDefectCausedby

ESDHBM

模式個(gè)體放電（未接地）攻擊在工作臺(tái)表面上的器件

（放電從手指-引腳-器件-模塊）16Rev.

1.0ConfidentialTowardsZeroDefectCausedby

ESDHBM

模式人體模式（HBM）測(cè)試回路17Rev.

1.0ConfidentialTowardsZeroDefectCausedby

ESD HBM

模式HumanBodyModelWaveform

800V18Rev.

1.0ConfidentialTowardsZeroDefectCausedby

ESDMM

模式機(jī)器模式（HBM）測(cè)試回路19Rev.

1.0ConfidentialTowardsZeroDefectCausedby

ESDMM

模式20Rev.

1.0ConfidentialCDM 模式21Rev.

1.0ConfidentialTowardsZeroDefectCausedby

ESDChargedDeviceModel

(CDM)充電器件模式（CDM）Electrostaticchargesgetstoreduponareasofplastic

devices,e.g.leadframeandmetalpartsofdie靜電電荷存儲(chǔ)在塑封器件內(nèi)。如引線框架和芯片的金屬部件ChargesquicklydischargetoaneffectivegroundthroughalowimpedancepathandcauseESDdamage靜電電荷通過(guò)一個(gè)低阻抗到地迅速放電,造成ESD損傷Theelectrostaticenergystoredinthechargeddevicedependsonitscapacitancewhichisfoundtobeafunctionofitsorientationwithrespecttoground.Adeviceclosetogroundplanewillhavelargecapacitancethanthatfarfromthegroundplane充電器件存儲(chǔ)的靜電能量取決于其電容。而其電容大小和充電器件與地面方向性相關(guān).與地面接近的器件會(huì)有比遠(yuǎn)離地面的器件更大的靜電電容TowardsZeroDefectCausedby

ESDCDM 模式典型的CDM放電事件金屬表面22Rev.

1.0ConfidentialCDM=充電+快速放電CDM 模式TowardsZeroDefectCausedby

ESDCDM測(cè)試設(shè)置有效的接地23Rev.

1.0Confidential接地平面24TowardsZeroDefectCausedby

ESDCDM 模式Thelowohmicdischargeofachargeddevice(CDevice)–e.g.chargedbyslidinginaproductionlineisdescribedbytheChargedDeviceModel(CDM).TheCDMfailureisoneofthemainfailuremechanismsinautomaticproductionlines.帶電器件的低阻值放電-如在生產(chǎn)線上的滑動(dòng)充電可以認(rèn)為是CDM。充電器件模式失效是一種在自動(dòng)生產(chǎn)線上主要的失效機(jī)制。Rev.

1.0 ConfidentialTowardsZeroDefectCausedby

ESDCDM 模式TypicalCurrentWaveform

CDM25Rev.

1.0ConfidentialCurrent/

ATime/

ns使用中的ESD模式和ESD引力實(shí)時(shí)ESD圖譜TowardsZeroDefectCausedby

ESD脈沖寬度CDMMMHBM26Rev.

1.0Confidential10

1110

1010

910

8RiseTime

[s]上升時(shí)間PulseWidth

[s]10

7RealESDSpectrum–ESD

Models10

9 10

8TowardsZeroDefectCausedby

ESDHBM

–標(biāo)準(zhǔn)27Rev.

1.0ConfidentialMILSTD883D,method3015.7,

1989ANSIEOD/ESD–

S5.1–1993(ESDAssociation)（ESD協(xié)會(huì)）JESD22-A114-B–

2000 (JEDEC)Further

Standards:更多的標(biāo)準(zhǔn)EIAJ–JapanCECC–EuropeCompany

Standardsproductstandards(chipcards:

ISO/IEC10373)MM

–

標(biāo)準(zhǔn)28Rev.

1.0ConfidentialTowardsZeroDefectCausedby

ESDJESD22-A115-A–

1997

under

revision (JEDEC)ANSIEOD/ESD–

S5.2-1999AutomotiveElectronics

Council-

AEC-Q100-003-REV-ECDM

–

標(biāo)準(zhǔn)29Rev.

1.0ConfidentialTowardsZeroDefectCausedby

ESDANSIEOS/ESD–S5.3

–

1993 (ESDAssociation)JESD22-C101

–

1996 (JEDEC,onlyforfieldinduced

CDM)AutomotiveElectronics

Council-AEC-Q100-011-REV-A(OnlyforfieldInduced

CDM)TowardsZeroDefectCausedby

ESD靜電沾污的隨想30Rev.

1.0ConfidentialDamagecausedbyinvisibleandundetectableeventscanbebycomparingESDdamagetomedicalcontaminationofhumanbodybyvirusorbacteria.Althoughvirusesandbacteriaareinvisible,theycancauseseveredamageevenbeforeyoucandetecttheirpresence.Adefenseagainstthisinvisiblethreatissterilization.ESD損傷是無(wú)形的和無(wú)法發(fā)覺(jué)的事件，類似于人體來(lái)自于病毒和細(xì)菌的醫(yī)學(xué)污染。盡管病毒和細(xì)菌是無(wú)形的，他們也能在你察覺(jué)它們的到來(lái)前造成多種損傷。殺菌是一種抵制無(wú)形威脅的防護(hù)。TowardsZeroDefectCausedby

ESDESD基本知識(shí)31Rev.

1.0ConfidentialSummaryforPart1

第一部分的小結(jié)Chargesaregeneratedby2ways:

電荷積累產(chǎn)生于2種途徑：TriboeletricCharging

摩擦產(chǎn)生電荷Induction 感應(yīng)2.Type

of

Damages

caused

by

ESD:

ESD損傷類型：Catastrophic 完全的損壞Latent(Degradation) 潛在的損壞（性能下降）The3ESD

Models

are: 3種ESD模式HBM 人體模式MM 機(jī)器模式CDM 充電器件模式Staticcanbeconsideredasacontamination

problem靜電可以認(rèn)為是一種沾污問(wèn)題。TowardsZeroDefectCausedby

ESDESD

控制32Rev.

1.0ConfidentialPart

IIConceptofESD

Control第二部分ESD控制的概念TowardsZeroDefectCausedby

ESDESD

控制的基本概念33Rev.

1.0ConfidentialMajorityofproductsaredesignedtoserve3

functions大多數(shù)ESD控制產(chǎn)品被設(shè)計(jì)成可提供以下3種功能Grounding

接地Isolation 隔離Neutralization

中和TowardsZeroDefectCausedby

ESDESD

的控制34Rev.

1.0ConfidentialHowcanweprotectESDsensitivitydevice

(ESDS)?我們?cè)撊绾伪Ｗo(hù)ESD敏感器件（ESDS）？Minimizingcharge

generation最小化電荷的產(chǎn)生Keepingtheareaatequal

potential使區(qū)域處于等電勢(shì)Neutralizing

charge中和電荷ESD

的控制35Rev.

1.0ConfidentialTowardsZeroDefectCausedby

ESDHowtoachieve

this?如何實(shí)現(xiàn)？Minimizingchargegeneration

最小化電荷的產(chǎn)生Choosematerialsthatgeneratelittleorno

charge選擇低產(chǎn)生或不產(chǎn)生靜電荷的材料Avoidsliding&rubbingactions避免滑行和摩擦Keepingtheareaat

equalpotential使區(qū)域處于等電勢(shì)Usematerialswhichwilldissipateelectrostaticchargewhenconnectedto

earth使用當(dāng)接地后可以消散靜電的材料Directlyorindirectly,connectallsurfaces,peopleandobjectstogether直接或間接連接所有表面，包括人和物品。TowardsZeroDefectCausedby

ESDESD

的控制36Rev.

1.0ConfidentialMinimize

Field

Effects

最小化場(chǎng)效應(yīng)Allownounmodifiedplasticsinthe

area在區(qū)域中沒(méi)有未被更改的塑料Keepnon-conductors&insulatorsawayfromworking

area保持在工作區(qū)域內(nèi)沒(méi)有不導(dǎo)電物和絕緣物Neutralizing

charges中和電荷UseAir

Ionisers

使用離子風(fēng)機(jī)TowardsZeroDefectCausedby

ESDESD

的控制37Rev.

1.0ConfidentialGroundingDevices 接地部件Wrist-strip 腕帶Footstrap&Shoes

腳部接地帶和鞋Worksurfaces 桌墊Chairs 椅子Floors 地板Neutralization中和BenchTop

IoniserOverhead

IoniserIonisingAir

Gun 離子槍CompleteRoom

IonizationIsolation 隔離Shieldingbags 屏蔽袋Conductivecontainers

w/covers

有蓋的導(dǎo)電容器Restrictedentryto

EPA控制進(jìn)入EPAGarments 防靜電工作服TowardsZeroDefectCausedby

ESDESD

的控制38Rev.

1.0ConfidentialWhatisanESDProtectedArea

(EPA)?什么是ESD防護(hù)區(qū)域（EPA）？AnEPAisanareainwhichelectrostaticsensitivedevicescanbehandledoutsidetheirprotectivepackagingwithminimumriskofdamagefromElectro-StaticDischargeorElectricFields.Itisconstructedtocreateanenvironmentinwhicheverythingisatthesameelectrical

potential.ESD防護(hù)區(qū)域(EPA)是靜電敏感器件可以離開(kāi)他們的保護(hù)包裝被操作的區(qū)域，在ESD防護(hù)區(qū)域中靜電放電或電場(chǎng)損壞風(fēng)險(xiǎn)被減到最小。EPA創(chuàng)建了一個(gè)環(huán)境使每一樣物品等電勢(shì)。TowardsZeroDefectCausedby

ESDESD

的控制EPAGroundSystem

Design39Rev.

1.0ConfidentialTowardsZeroDefectCausedby

ESDESD

的控制Conductive

導(dǎo)電區(qū)40Rev.

1.0ConfidentialSurface

Resistivity

表面阻抗StaticDissipative靜態(tài)消散區(qū)Insulative

絕緣區(qū)105

1081012

10200Note:Materialswith

surface

resistivity to andbelow

aresuitableforESD

Shielding表面阻抗在101至109

和以下的材料適合于ESD防護(hù)Materialswith

surface

resistivity andbelowaresuitable

forEMI/RFI

Shielding表面阻抗在101和以下的材料適合于EMI/RFI防護(hù)TowardsZeroDefectCausedby

ESDESD

的控制41Rev.

1.0ConfidentialStaticSafeWorkStations靜電安全工作配置Staticsafeworkstationisanareathathasbeenestablished

toeffectivelycontrolESD.Astaticsafeworkstationwillincludeequipmenttoperformthethreecriticalfunctions–Grounding,Isolationand

Neutralization.靜電安全工作配置是一個(gè)被定義為有效控制ESD的區(qū)域。它包括的設(shè)備須提供3種重要功能—接地，隔離，和中和。TowardsZeroDefectCausedby

ESDESD

的控制42Rev.

1.0ConfidentialTowardsZeroDefectCausedby

ESDESD

的控制43Rev.

1.0ConfidentialProtective

Measures

防護(hù)措施Handling 操作Protective

Garments

防護(hù)工作服Footwear

Testing 工作鞋測(cè)試WristStrap

Testing 腕帶測(cè)試Packing 包裝TowardsZeroDefectCausedby

ESDESD

的控制Protective

Garments

防護(hù)工作服Normalgarments

cangeneratedangeroushigh

voltages常規(guī)的服裝可以產(chǎn)生危險(xiǎn)的高壓常規(guī)的鞋不能消散人體的電荷Normalshoesarenotabletodrainoff

chargefromhuman

bodies!44Rev.

1.0ConfidentialTowardsZeroDefectCausedby

ESDESD

的控制Specialgarmentsalsocompensatethefieldgeneratedbythe

normalclothesiftheyareproperly

fastened!Dissipativefootweardrainsoffchargeonhuman

bodiesinacontrolled

waySpecialgarments

donotshowdangerousvoltageDissipative

footwearavoidschargingbywalking!導(dǎo)靜電的工作鞋可以消除走動(dòng)時(shí)的電荷積累45Rev.

1.0Confidential特制的工作服不會(huì)產(chǎn)生危險(xiǎn)的高壓Protective

Garments防護(hù)工作服特制的工作服在適當(dāng)扣緊的前提下同時(shí)補(bǔ)償了常規(guī)服裝產(chǎn)生的電場(chǎng)導(dǎo)靜電的工作鞋可控的導(dǎo)走人體積累的電荷TowardsZeroDefectCausedby

ESDESD

的控制Footwear

Testing工作鞋測(cè)試Testyour

footwearevery

day!Testyourfootwear

onebyonebystandingonametal

plate請(qǐng)每天測(cè)試工作鞋！46Rev.

1.0Confidential測(cè)試工作鞋時(shí)請(qǐng)站立于金屬板上，并逐腳測(cè)試TowardsZeroDefectCausedby

ESDESD

的控制Wrist

Strap

Testing腕帶測(cè)試Useawriststrapforgroundinginorder

nottobe

charged47Rev.

1.0ConfidentialTestyourpersonal

wriststrapevery

day!請(qǐng)每天測(cè)試個(gè)人的腕帶使用腕帶是為了接地，沒(méi)有電荷積累TowardsZeroDefectCausedby

ESDESD

的控制Packing

包裝RemoveallouterpackingoutsidetheEPAuntilyouseeanESDwarning

label!Somesealsmadeofinsulatedmaterialthereforesealsshallbecutandnot

stripped!48Rev.

1.0ConfidentialInsidetheEPA,onlyreleasedand

labelledpackingis

allowed!只有在ESD防護(hù)區(qū)域打開(kāi)和標(biāo)識(shí)包裝是被允許的除去絕緣封條必須是割開(kāi)而不是撕扯開(kāi)在ESD防護(hù)區(qū)域外除去所有外部包裝直至看到ESD警告標(biāo)志TowardsZeroDefectCausedby

ESDESD

的控制Usedissipativematerialonlyasfilling

material!(Donotusestyrofoam

chips!)49Rev.

1.0Confidential使用導(dǎo)靜電材料填充（禁止使用聚苯乙烯泡沫塑料）Packing

包裝TowardsZeroDefectCausedby

ESDESD

的控制ESDSshallonlybehandledbytrained(andequipped)personnelatspecial

workingplaces!Wrist

StripDissipativework

surfacePacking

包裝50Rev.

1.0ConfidentialESDS必須在特定的工作區(qū)域內(nèi)被培訓(xùn)過(guò)（已裝備）的人員操作導(dǎo)靜電的桌面TowardsZeroDefectCausedby

ESDESD

的控制Avoida“hard”

discharge避免“硬”放電51Rev.

1.0ConfidentialMetallic

surface金屬表面Packing

包裝TowardsZeroDefectCausedby

ESDESD

的控制Unpackthedevicesandplacethemondissipativematerial

todrainoffpossiblechargeonthedevices

“softly”52Rev.

1.0ConfidentialPacking

包裝倒出器件時(shí)須將它們放置于導(dǎo)靜電材料上來(lái)“溫柔地”散盡器件上可能存在的電荷TowardsZeroDefectCausedby

ESDESD

的控制53Rev.

1.0ConfidentialPrinciples

of

Protection

防護(hù)原則ESDisessentiallya“Quality”

problemESD本質(zhì)上是一種“質(zhì)量”問(wèn)題TotalCompanyCommitmentis

required需要全公司的承諾Anintegratedapproachismoreeffectivethanahaphazard

approach一套完整的ESD防護(hù)方案比隨便的方案更有效.TowardsZeroDefectCausedby

ESDESD

的控制54Rev.

1.0ConfidentialASystemApproachtoCorporateESD

Protection全公司范圍ESD防護(hù)的系統(tǒng)方案Requires:

必要項(xiàng)目：Co-ordinator 總協(xié)調(diào)負(fù)責(zé)人Standards 標(biāo)準(zhǔn)Procedures 程序Audit 審查T(mén)raining 培訓(xùn)Materials 材料TowardsZeroDefectCausedby

ESDESD

的控制55Rev.

1.0ConfidentialFourBasicStepstowardssuccessful

implementation成功執(zhí)行的4個(gè)基本步驟：ManagementCommitment 管理層的支持ControlofSupplies 供應(yīng)商的控制Comprehensive

in-house

system 完善的內(nèi)部系統(tǒng)Tell

your

customers 提示客戶TowardsZeroDefectCausedby

ESD關(guān)于未來(lái)芯片內(nèi)幾何結(jié)構(gòu)的不斷減小Decreasinggeometricalstructuresof

microchips+Increasing

integration

density集成度的增加56Rev.

1.0ConfidentialChipsmoresensitiveto

ESD器件對(duì)ESD越來(lái)越敏感TowardsZeroDefectCausedby

ESDESD的控制57Rev.

1.0ConfidentialSummaryforPart2

第二部分的小結(jié)1. The

3basic

conceptofESD

controlare:

ESD控制的3個(gè)基本概念b) Isolationa) Grounding

接地隔離c) Neutralisation 中和EPA的重要性ESD是一種質(zhì)量問(wèn)題Theimportanceofan

EPAESDisaquality

issueESDpreventionrequirestotalcompanycommitment,comprehensivein-housesystemandcontrolofsupplies,lastbutnotleastinformingyour

customersESD防護(hù)要求管理層的支持，完善的內(nèi)部管理和供應(yīng)商的控制，以及提示客戶TowardsZeroDefectCausedby

ESDESD防護(hù)系統(tǒng)58Rev.

1.0ConfidentialPart

III SystemforESD

Protection第三部分

ESD防護(hù)系統(tǒng)TowardsZeroDefectCausedby

ESDESD防護(hù)系統(tǒng)59Rev.

1.0ConfidentialSystemforExternalESDProtection

(Corporation)外部的ESD防護(hù)系統(tǒng)（公司）Goal

of

Corporation 公司目標(biāo)InternalandExternal

ProtectionOrganisationof

CorporationResponsibilityintheESD

team內(nèi)部和外部防護(hù)公司組織公司ESD小組的職責(zé)?StandardfortheCRMA–

QUW82-014TowardsZeroDefectCausedby

ESDESD防護(hù)系統(tǒng)60Rev.

1.0ConfidentialGoalof

CRMA安盛的目標(biāo)PreventionofESDfailuresfromreceivingwafertodeliveryICto

customer從接收wafer到交付IC至客戶全程防止ESD失效TowardsZeroDefectCausedby

ESDESD防護(hù)系統(tǒng)內(nèi)部和外部的防護(hù)InternalandExternalProtectionInternal

Protection

內(nèi)部的防護(hù)MaketheDevicesrobustagainstESD(DesignMeasures)使器件能充分抵抗ESD（設(shè)計(jì)方面的措施）External

Protection外部的防護(hù)ReduceESDStressduringtheprocess(WaferFab&

CRMA)制造中減少ESD應(yīng)力（Wafer

Fab

&

CRMA)61Rev.

1.0ConfidentialTowardsZeroDefectCausedby

ESDESD防護(hù)系統(tǒng)Organisation

of

CRMA

組織62Rev.

1.0ConfidentialTowardsZeroDefectCausedby

ESDESD防護(hù)系統(tǒng)63Rev.

1.0ConfidentialResponsibilityintheESDTeamESD小組的職責(zé)ReleaseofESDProtectivematerials

發(fā)布ESD防護(hù)材料Approval

of

manufacturing

equipment

onESDaspects

批準(zhǔn)制造機(jī)器的ESD防護(hù)狀況SupportofthedepartmentsonESD

aspects

支持部門(mén)的ESD的防護(hù)SampleauditoftheESDprotectionmeasures 抽樣審查ESD防護(hù)設(shè)施TrainingoftheESD

Responsible

persons 培訓(xùn)ESD負(fù)責(zé)人TowardsZeroDefectCausedby

ESDESD防護(hù)系統(tǒng)64Rev.

1.0ConfidentialInternationalStandardforESD

Protection(1).IEC61340-5-1Protectionofelectronicdevicesfromelectrostaticphenomena–GeneralRequirementsTheIEC61340-5-1TechnicalReportProtectionofelectronicdevicesfromelectrostaticphenomena–GeneralRequirementswasdevelopedfromearlierStandardsincludingEN100015.ItisaccompaniedbyaUserGuideIEC61340-5-2,whichgivesalotofadditionalinformationtohelpthenon-specialistimplementIEC61340-5-1.AsaIECdocuments,theyhaveworld-wideapplicabilityandareplannedtobedevelopedintofullworld-wideIECstandardsinthefuture.TowardsZeroDefectCausedby

ESDESD防護(hù)系統(tǒng)65Rev.

1.0ConfidentialESD防護(hù)的國(guó)際標(biāo)準(zhǔn)(1).

IEC61340-5-1 電子器件靜電防護(hù)的綜合需求The

IEC

61340-5-1

技術(shù)報(bào)告

Protection

of

electronicdevicesfromelectrostaticphenomena–

GeneralRequirements發(fā)展了早期的標(biāo)準(zhǔn)包括EN100015.

伴隨它的還有一個(gè)

用戶手冊(cè)

IEC61340-5-2,

它給予了很多附加信息來(lái)支持未包含專業(yè)實(shí)現(xiàn)的IEC61340-5-1.

作為IEC文獻(xiàn)，它有全球適用性，并且已計(jì)劃在未來(lái)發(fā)展成全球的IEC標(biāo)準(zhǔn)。ESD防護(hù)系統(tǒng)66Rev.

1.0ConfidentialTowardsZeroDefectCausedby

ESD(2).

JESD625-A RequirementsforHandlingElectrostatic-Discharge-Sensitive

(ESDS)

Devices

操作ESDS的必備需求ThisstandardestablishestheminimumrequirementsforElectrostaticDischarge(ESD)controlmethodsandmaterialsusedtoprotectelectron