半導體工藝Photo課件

IC工藝技術系列講座

第二講PHOTOLITHOGRAPHY光刻1精選課件講座提要1. General2. Facility(動力環(huán)境)3. Mask(掩膜版)4. Processstephighlight(光刻工藝概述)5. BCD正膠工藝6. Historyand未來的光刻工藝2精選課件1. GeneralMASKINGProcess(光刻工藝)Photolithography(光學光刻)----Transferatemporarypattern(resist)

Defectcontrol Criticaldimensioncontrol Alignmentaccuracy Crosssectionprofile

Etch(腐蝕)----Transferapermanentpattern(Oxide,Nitride,Metal…)3精選課件2.0 FacilityrequirementTemperature(溫度)70oFHumidity(濕度) 45%Positivepressure(正壓) >0.02in/H2OParticlecontrol(微粒)Class100Vibration(震動)Yellowlightenvironment(黃光區(qū))DIwater(去離子水)17mhomCompressairandNitrogen(加壓空氣,氮氣)Inhousevacuum(真空管道)4精選課件3.0 Mask(掩膜版)

DesignPGtapeMaskmaking

Plate---quartz,LEglass,SodalineglassCoating---Chrome,Ionoxide,EmulsionEquipment---E-beam,PatterngeneratorMaskstorage---AntistaticBox5精選課件Pellicle6精選課件Pellicleprotection7精選課件4.0 光刻工藝概述PrebakeandHMDS(前烘)Resistcoating(涂膠) EBR(去膠邊),softbake,3. Exposure(曝光) Alignment(校正)4. Develop(顯影) Poste-bake,Hardbake,backsiderinse5. Developinspection(顯檢)8精選課件4.1 PrebakeandHMDStreatment

PurposeofPre-bakeandHMDStreatmentistoimprovetheresistadhesiononoxidewafer.HMDSisadhesionpromoterespeciallydesignedforpositiveresist. HMDS(Hexamethyldisilane)canbeappliedonthewafersby 1. Vaporinabucket 2. vaporinavacuumbox 3. Directlydispenseonwafer 4. YESsystem---inahotvacuumsystem 5. Vaporinahotplate(withexhaust) ToomuchHMDSwillcausepoorspin,viceversawillcauseresistlifting9精選課件4.2 ResistCoating(涂膠)Resistcoatingspecification(指標）Thickness（厚度）0.7u–2.0u(3.0以上forPadlayer)Uniformity（均勻度）+50A–

+200ASizeofEBR（去膠邊尺寸）Particle（顆粒）<20perwaferBacksidecontamination(背后污染）三個主要因數(shù)影響涂膠的結果Resist Product(產(chǎn)品）

Viscosity（粘度）Spinner Dispensemethod（涂膠方法）

Spinnerspeed(RPM)（轉(zhuǎn)速）

Exhaust（排氣）

Softbaketemperature（烘溫）Facility Temperature（室溫）Humility（濕度）10精選課件4.2.1 Coater(涂膠機）EquipmentmoduleandspecialfeaturePre-bakeandHMDS---Hot/ColdplateResistdispense---ResistpumpRPMaccuracy---MotorEBR---Top/bottomHotplate---softbaketemperatureaccuracyExhaustWastecollectionTemperature/HumiditycontrolhoodTransfersystem---ParticleandreliabilityProcessstepandprocessprogram---Flexible11精選課件SVG8800升降機涂膠HMDS熱板冷板升降機升降機升降機涂膠熱板熱板升降機升降機升降機升降機涂膠熱板冷板HMDS冷板冷板冷板涂膠熱板熱板升降機升降機顯影熱板熱板熱板冷板4.2.2Coater(涂膠機）combination12精選課件4.2.3Coater(涂膠機）ResistdispensemethodsStaticDynamicRadialReverseradialResistpump(Volumecontrol---2cc/waferanddripping)Barrelpump---TritekDiaphragmpump---MilliporeN2pressurecontrolpump---IDLStepmotorcontrolpump---Cybotsizeofdispensehead13精選課件4.2.4 Coater(涂膠機）rpm(轉(zhuǎn)速）

andacceleration（加速）

Maximumspeed---Upto10000rpmStability---daytodayAcceleration---controllablenumberofstepsReliability---timetoreplacementEBR(Edgebeadremoval)（清邊）Method---TopEBRorBottomEBRorTopandbottomEBRProblem---DrippingChemical----Acetone,EGMEA,PGMEA,ETHLY-LACTATE14精選課件ResistTypeNegativeresistPositiveresist G-line i–line reverseimage TAC---topanti-reflectivecoating BARLI---bottomanti-reflectivecoatingChemicalamplificationresistXrayresist15精選課件4.3 .1Exposure(曝光)

Transferapatternfromthemask(reticle)toresistGoal1. CriticalDimensioncontrol(CD)條寬2. Alignment校準---Mis-alignment,runin/out3. Patterndistortion圖樣變形---Astigmatism4. Crosssectionprofile側(cè)面形貌---sidewallangle5. Defectfree無缺陷Equipment/mask/resistselection1. Resolution分辨率---Exposecharacter,Lightsource(wavelength),N/A,2. Auto-alignmentskill自動校準技術---Lightfield,darkfield,laser3. Mask掩膜版---e-beammaster,sub-master,spotsize,quartzplate,defectdensity,CDrequirement4. Resistselection膠選擇16精選課件4.3.2 Exposure(曝光)

AlignerTechnology1. Contactprint(接觸）

Softcontact,hardcontact,proximity2. Scanner(掃描）3. Stepper(重復）

1X,2X,4X,5X,10X4. Step–Scan(重復掃描) 4X---reticlemove,wafermove,reticle/wafermove5. Xray(X光）

1:16. E-beam(電子束）---Directwrite17精選課件4.3.3 Exposure(曝光)

Contactprint(接觸）1. Mostofusefornegativeresistprocess---for5uprocessandcanbepushto3u.2. Positiveresistcanprintsmallerthan3u,anddeepUVcanpushto1u,butveryhighdefect3. Equipment: ---CanonPLA501 ---Cobilt ---Kasper ---K&S18精選課件Contactprint---Canon50119精選課件4.3.4 Exposure(曝光)

Scanner(掃描）1. MostofuseforG–linePositiveresistprocess---for3uprocessandcanbepushto2u.2. Negativeresistcanprintsmallerthan4u3. Equipment: ---CanonMPA500,600 ---PerkinElmer100,200,300,600,700,900

20精選課件PE240Scanner21精選課件Canon600Scanner22精選課件4.3.5 Exposure(曝光)Stepper(重復）

1. Glinepositiveresist---for<0.8uprocess2. ilinepositiveresist---<0.5uprocess3. ilineresistplusphase-shiftmask---canbepushedto0.354. deepUVresistprocess---0.35uandbelow5. Equipment: ---Ultratech ---Canon ---Nikon ---ASML 23精選課件4.3.6 Exposure(曝光)6ASMLStepperlist

Model WavelengthResolutionASML2500 g 0.8ASML5000 ASML5500–20,22,25,60,60B,80,80B i 0.55ASML5500–100,100C,100D,150 i 0.45ASML5000–200,200B,250,250B UV 0.35ASML5500–300,300B,C,D,TFH UV 0.25ASML5500-900Step-Scan UV24精選課件4.4.1 Develop(顯影）Developprocess 1. Postexposebake 2. ResistDevelop 3. DIwaterrinse 4. HardBakeDevelopequipment 1. Batchdevelop 2. Trackdevelop

Developchemical 1.

KOH 2. Metalfree(TMAH)--- Tetramethylamoniahydroxide 3. Wettingagent---with/without 4. Concentration---2.38%TMAHTrackdevelopmethod 1.

Spray 2. Steam 3. Signal-Paddle 4. Double-Paddle25精選課件4.4.2Develop(顯影）DevelopTrack1. TemperaturecontrolwaterjacketforDevelopline2. Developpump/developpressurecanister3. Exhaust4. Hotplatetemperaturecontrol5. Pre-wet---processprogram26精選課件4.4.3 Develop(顯影）CDcontrolindeveloping1. Postbakeprocess2. DevelopTime3. Concentrationofdeveloperchemical(Higherfast)4. Developertemperature(lowerfaster~1oC/0.1u)5. Developrecipe---pre-wet,paddle,rotation6. Ageofthedevelopchemical7. Rinse---DIwaterpressure8. Hardbaketemperature27精選課件4.5.1 DevelopInspection

Toolforinspection1. Microscope Manuallyloading Automaticloading2. UVlamp Manuallyloading Automaticloading3. CDmeasurementequipment Manuallymeasuringsystem---Vicker, Automaticmeasuringsystem---Nanoline CDSEM28精選課件4.5.2 DevelopInspection

Inspectionitems1. Layername2. Alignment3. Runin/out4. Patterndistortion5. Patternintegrity6. Defects lifting,particle,discoloration,scumming,bridging,excessresist,scratch7. CD(criticaldimension)

29精選課件Nanoline---forCDmeasurement30精選課件Hitachi8860---CDSEM31精選課件LeitzMicroscopeinspectstation32精選課件AutoloadUVinspectionsystem

33精選課件5.0 BCD正膠工藝Equipment SSI,SVG8800,SVG90Processstep pre-bake/HMDS/coldplate spin(<5000rpm)---dynamicdispense ---top(bottom)sideEBR(2mm) softbake(100oC)/cold/palteResist/spec Shipley 6112(1.2u) 1818(1.8u1stmetal) 6818(2.4u2ndmetal) 6118(2.9uPad) 6124(3.6u-4.5uST) Everlight 533(1.2) Uniformity---+300AResistcoating升降機冷板HMDS涂膠熱板冷板升降機34精選課件SVG9035精選課件SVG880036精選課件5.1.1 PositiveResist(正膠）Component(成分）Resin（樹脂）

Diazonaphthoquinone(DNQ)/novolakPhoto-sensitizer（感光劑）Solvent（溶劑）Dye（染料）Manufacturing(制造商）Kodak–Hunt–Ashchemical(USA)TOK(Japan)JSR(Japan)Shipley(USA)AZ(USA,Germany)Sumitomo(Japan)Everlight(Taiwan)37精選課件5.1.2 PositiveResist(正膠）ProductNameandfeature(產(chǎn)品稱與特性）以everlight(永光）正膠為例

ProductSeries EPG510Series Exposewavelength G-Line(435nm) Thickness Name 2000rpm5000rpm Viscosity（粘度） EPG510---12cp 1.25u 0.80u EPG512---21.5cp 2.00u 1.25u EPG516---50cp 3.25u 2.00u EPG518---105cp 4.50u 2.75u EPG519---460cp 9.00u 5.5u

Resolution(分辨率） 0.8u(0.55u---thesmallest) DepthofFocus(聚焦深度）+1.4u(1.0uline/space) Sensitivity(感光度） Eth=60mj/cm2

Eop=90mj/cm238精選課件5.1.4 PositiveResist(正膠）Selectapositiveresist1. Resolution（分辨率）2. Resistthickness---Spincurve（厚度）3. Photospeed (曝光速度)4. Exposelatitude(曝光寬容度)5. Adhesion（粘附性）6. Reflectivenotch（反射缺口）6. Metalliccontent（金屬含量）7. Thermalstability（熱穩(wěn)定性）8. Plasmaresistance（抗腐蝕能力）9. Howeasytoberemoved（清除能力）10. Price（價格）39精選課件5.2 ExposeEquipmentUltratechstepper1100–(6”)

Ultratechstepper1500–(6”)

Canon600 –(6”)

PerkinElmer240 –(4”)40精選課件PositiveResistreactionduringexpose41精選課件PositiveResistreactionduringexpose42精選課件5.2.1 UltratechStepper

UltratechstepperG-lineN/A---0.24and0.311:1printratio3X5inchreticle---3,4,5,7field4udepthoffocusBlindstepcanbepushto<5u(nospec)Centerofarray<+50uDarkfieldalignmentSitebySitealignmentAlignmenttarget *oat---4mmX4mm *K/T---200uX200u43精選課件UltratechStepper110044精選課件UltratechStepper1500/170045精選課件5.2.2 Ultratchstepperspecification46精選課件UTS---ReticleandJobfileGuideFiducials47精選課件UTS---primarylens48精選課件UTSAlignment

Optic49精選課件Ulratechsteppersitebysitealignment50精選課件UTalignmentprocedureLoadjobfileintocomputerLoadreticle

StartＦiducialsalignment---Guide,rotation(1500)OATalignment OATsize=4mmX4mm Fastandslowscan1000uSidebysidealignment Keyandtargetsize200uX200u shotscan20u longscan100u(80u)Auto-focus GobleorlocalFailurealignment Skip Expose Zmode51精選課件5.3PerkinElmeralignerMicalignPE100MicalignPE200,220,240MicalignPE300,340,340HTMicalignPE500MicalignPE600MicalignPE700MicalignPE900Micscan100Micscan200Micscan300Micscan40052精選課件PE240

Specification53精選課件PE24054精選課件PE240PMCenterofcurvatureParallelismLightintensityFocusDistortionMask/wafercenteringViewopticHPCrebuildCoolingairflowrateVibrationfromHPCFacilityVibrationfromenvironmentTemperaturecontrolhoodProcessReferencewaferApertureselectionResistbuilduponXYOpinsRoofmirrorcleaningMaskheatupduringexpose55精選課件PE---Focuswedgemask56精選課件PE---distortion57精選課件PE---Projectionoptic58精選課件PEMercurylamp59精選課件PE---Adjustableslit60精選課件PEalignmentprocedureSetscanLoadmaskLoadwaferSwitchtomaskUsemicroscopeandcarriagemovementtofindthealignmentmarkonmask(Testdie)MovemaskonlytoalignthewaferSwitchtowaferMovewaferaligntomask61精選課件5.4.1 ResistdevelopEquipment SSI,SVG8800,SVG90Processstep pose-ebake/coldplate develop---doublepaddle ---DIwaterrinse ---backN2/rinse hardbake(110-130oC)/cold/palteDeveloper TMAH2.35%

升降機冷板熱板冷板升降機熱板顯影62精選課件SVG880063精選課件SVG9064精選課件5.4.2ResistdevelopEquipment DevelopsinkEquipmentsetup Temperature N2blanket Filtersize Filterchange

Developer TMAH2.38% DevelopchangeProcessstep batchdevelop---immerse(1’&15”) QDRDIwaterrinse(8cycles) hardbake(110-130oC)/cold/palte65精選課件6.Historyand未來的光刻工藝Willimprinttechnologyreplacephotolithography?In1798,imagewastransferredbystoneplate1940,BellLabusedresistdevelopedbyEastmanKodak1960,SanFranciscobayareabecomesthesiliconvalley---AT&T,Raytheon,Fairchild,Negativeresist–contactprintprocesswildlywasused.Endof1970-earlyof1980,positiveresist–Projectionprint(PerkinElmerMicalign)startedtobeusedinproduction.Bayareabecamecloudy---National,IntelandAMD.OutsidebayareahadMotolora,TI,IBM.From1970toearly2000,thetechnologyofsemiconductorisdevelopedveryfast.Thesmallestfeaturesizefrom10ureducedto0.09u.0.25uand0.35uproductswererunningmassproductioneverywhere---USA,Europe,Japan,Taiwan,Korea…i-line,anddeepUV---5Xstepperandstep-scan(4X)alignerbecamethemajortools.Now,0.09utechnologybecomemature.0.065u,0.045uand0.035utechnologyarebeingdeveloped.Immersionlithographyandimprinttechnologywillbeusedtoprintthesenanofeature.Imprinttechnologyclaimsthatitisabletoprint0.01u(10nm)---Itmaybethefuturemasking.66精選課件6.1 History

Lithography,asusedinthemanufactureoftheintegratedcircuit,istheprocessoftransferringgeometricshapesonamasktothesurfaceofasiliconwafer.Theseshapesmakeupthepartsofthecircuit,suchasgateelectrodes,contactwindows,metalinterconnections,andsoon.Althoughmostlithographytechniquesusedtodayweredevelopedinthepast40years,theprocesswasactuallyinventedin1798;inthisfirstprocess,thepattern,orimage,wastransferredfromastoneplate(thewordlithocomesfrom).Thefirstpracticaltwodimensionaldevicepatterningonasiliconwaferwasactuallycarriedoutinthelate1940sattheBellLab.Atthattime,polyvinylcinnamate,developedbyEastmanKodak,wasusedasaresist.However,deviceyieldswerelowbecauseofthepooradhesionofthepolyvinylcinnamatetothesiliconandoxidesurface.TheKodakchemiststhenturnedtoasyntheticrubberbasedmaterial---apartiallycyclizedisopreneandaddedaUVactivesensitizer---abis-aryl-azideintoittocrosslinktherubbermatrixandcreatedanewclassofphotoresistmaterial.Sincetheunexposedareaofthenewmaterialwastheonlypartofthepolymermatrixthatwilldissolveinanorganicsolventandyieldinganegativeimageofthemaskplate,therefore,thenewmaterialwasthenreferredasthenegativeresist.Thecyclizedrubber/bisazideresistwaswidelyusedinthecontactprintingage.However,thecontactmodeofprintingcreatedseverewearofthemaskplateandthedefectdensityofthephotomaskandthewaferwasveryhigh.Theindustrythereforedecidedtoswitchtocontactlessprojectionprintingin1972forproducingthe16kDRAM.Projectionprinting,however,wascarriedoutintheFraunhofferorthesocalledfarfielddiffractionregionandtheaerialimagewasmuchpoorerthanthecontactorproximitymethodofprinting.Inordertopreservethesamequalityofimagestructure,thecontrastoftheimagematerialmustbeincreased.

67精選課件

Lithographiclorehasitthatthediazonaphthoquinone/novolakresist(thetermnovolakisderivedfromtheSwedishwordlak,meaninglacquerorresinandprefixedbytheLatinwordnovo,meaningnew)madetheirwayfromtheblueprintpaperindustrytothemicroelectronicthroughfamilyties:atthattimes,theofficesofAzoplate,theAmericanoutletforKalleprintingplate,waslocatedatMurrayHill,NJ,justacrossthestreetfromthefamousBellLabs.ThefatherofatechnicianatAzoplateworkedasatechnicianatBellLabs.ApparentlythefatherhadcomplainedonedayaboutthepoorresolutionqualityofthesolventdevelopedresistsystemusedattheBellLabsandthesonhadboastedthepropertiesoftheAzoplateDNQ/novolakmaterial;anyway,onedaythefathertookabottleofthematerialwithhimtotheBellLabs,andtheageoftheDNQ/novolakresistbegan.ThenewmaterialwasmarketedbyAzoplateunderthetradenameofAZphotoresist.Itwasalwaysreferredasthepositiveresistforapositivetoneofimagewouldbereproducedbythenewmaterial.TheuseofDNQ/novolaksystemincreasedrapidlyaftertheintroductionoftheprojectionlithography.By1980s,theDNQresisthadcompletelysupplantedtheoldnegativeresistastheworkhorseofthesemiconductorindustryinthehigh-endapplications.TheDNQ/novolakresisthasheldswayfor6devicegenerations,fromtheintroductionofthe16KDRAMtothelargescaleproductionofthe64MDRAMin1994to1995.Thesuccessofsuchmaterialwastheindicativeofitsupremeperformanceandpotential.Today,itappearsthatitisnotreallytheresolutionwhichdefinesthelimitoftheDNQ/novolakresistapplication,butratherthelossinthedepthoffocuswiththeeverincreasingNAofthestepper.DeepUVandchemicalamplificationnegativetoneresistslowlyerodethemarketplaceoftheDNQ/novolakresist.Bytheendofthe1990s,theDNQ/novolakresistwasnolongerbeusedinthetechnologicallymostadvancedapplications---theprintingofthecriticallevelsofthe256MDRAM.68精選課件6.2Future

IntroductionofnanoimprinttechnologyFabricatingmicrostructuresandnanostructureisimportantinmanyfieldsofscienceandtechnology,includingelectronics,datastorage,flexibledisplays,microelectromechanicalsystems,microfluidics,photonicsandbiosensors.Traditionally,opticalorelectronbeamlithographysystemsareusedtoprinttherelevantstructures.However,newprintingmethodssuchasimprintlithographyandsoftlithographyhaverecentlybeenexploredinsomedetailtolowerthecostsoffabricatinglowvolumesofstructureswithverysmallfeaturesandtoincreasetherangeofprintingapplication.Thesoftlithographyschemes,ingeneral,useasofttemplatepatternmadeofsiliconeelastomer,polydimethylsiloxane(PDMS),whichisplacedintocontactwiththesubstrateinavarietyofways,topatternasurfacefilm,totransferamaterial,orfordirectintegrationintothefinalpart,witharangeofinnovativeapplications.ChallengesinthisareaaregenerallyconcernedwiththeinherentlimitationsofthePDMSmaterialincludingresolutionlimitationswhencuringduetodifferencesinthermalexpansionbetweenthemasterandmold;adhesiontocommonmastermaterialslike