6-Silvaco-TCAD工藝仿真離子注入、擴散、淀積和刻蝕

SilvacoTCAD工藝仿真離子注入、擴散、淀積和刻蝕Page

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主要內容第一部分工藝仿真（離子注入…）第二部分總結Page

31工藝仿真第一部分工藝仿真（離子注入…）第二部分總結1.1.1離子注入的命令及參數(shù)命令implant，參數(shù)及說明如下：Page

41.1.2離子注入的命令及參數(shù)（續(xù)）Page

5離子注入的幾何說明：注入面：α表面：∑仿真面：βTiltangle：θRotationangle：φ1.1.3離子注入的例句Page

6implantphosphdose=1e14energy=100tilt=15implantborondose=1e13energy=50tilt=0s.oxide=0.005implantborondose=1e13energy=300bcatilt=0rotation=0Analytical注入：SVDP注入（s.oxide為屏氧厚度）：MonteCarlo注入：implantborondose=1e14energy=50unit.damagedam.factor=0.1注入損傷：1.1.4離子注入的例子Page

7goathenalinexloc=0.0spac=0.02linexloc=1.0spac=0.10lineyloc=0.0spac=0.02lineyloc=2.0spac=0.20initsiliconc.boron=1e16two.dimplant

phosphdose=1e13energy=50\tilt=7unit.damagedam.factor=0.05extractname="xj"xjmaterial="Silicon”\mat.occno=1x.val=0.05junc.occno=1tonyplot抽取得到結深Xj＝0.267678μm1.2.1擴散的命令及參數(shù)命令diffuse，參數(shù)及說明如下：Page

81.2.2擴散例句Page

9diffusetime=1hourtemp=1000c.boron=1e20diffusetime=30temp=1200weto2diffusetime=2temp=800t.final=1200nitropress=2diffusetime=20temp=1200nitropress=2diffusetime=2temp=1200t.final=800nitropress=2Diffusetime=1temp=1000nitropress=1.5磷的預沉積：濕氧氧化（也可以定義氣流）：變溫擴散：快速熱退火（RTA）：高級的擴散模型：methodplsdiffusetime=1hourtemp=950nitroc.phos=1e20\tsave=1tsave.mult=10dump.predep=predep1.2.3擴散的例子Page

10goathenalinexloc=0.0spac=0.02linexloc=2.0spac=0.10lineyloc=0.0spac=0.02lineyloc=2.0spac=0.05initsiliconc.boron=1e16two.ddepositoxidethick=0.2div=4etchoxideleftp1.x=0.5methodplsdiffuse

time=1hourtemp=950nitro\c.phos=1e20tsave=1tsave.mult=10\dump.prefix=predeptonyplotpredep*.strtonyplot-overlaypredep*.strt1t3t4t5t21.3.1淀積的命令及參數(shù)命令deposit，參數(shù)及其說明如下：Page

111.3.1淀積的命令及參數(shù)（續(xù)）Page

12新淀積的層襯底dy和ydy示意圖ydydy1.3.2淀積的例句Page

13depositoxidethick=0.1dy=0.01ydy=0.05depositoxidethick=0.1div=10淀積，網格控制：depositmaterial=BPSGthick=.1c.boron=1e20c.phos=1e20淀積BPSG：rate.depomachine=MOCVDcvddep.rate=0.1u.m\

step.cov=0.75tungstendepositmachine=MOCVDtime=1minute淀積，網格控制：1.3.3淀積的例子Page

14depositoxidethick=0.1div=10depositoxidethick=0.1dy=0.03ydy=0.05depositoxidethick=0.1dy=0.06ydy=0.05goathenalinexloc=0.0spac=0.02linexloc=1.0spac=0.10lineyloc=0.0spac=0.02lineyloc=2.0spac=0.20initsiliconc.boron=1e16two.dtonyplotdepositoxidethick=0.1dy=0.01ydy=0.05Note:Thenumberofgriddivisionshasnotbeenspecified.Anonuniformgridwith14divisionsand0.001micronspacingsatthetopandbottomwillbeused.1.4.1刻蝕的命令及參數(shù)命令etch，參數(shù)有：Page

151.4.1刻蝕的命令及參數(shù)（續(xù)）Page

161.4.1刻蝕的命令及參數(shù)（續(xù)）Page

17參數(shù)Isotropic只是一個速率，等方向性的速率。1.4.2刻蝕例子

Page

18goathenalinexloc=0.0spac=0.02linexloc=1.0spac=0.10lineyloc=0.0spac=0.02lineyloc=2.0spac=0.20initc.boron=1e16two.ddepositoxidethick=0.1div=10depositsiliconthick=0.5div=10structureoutfile=origin.stretchsiliconleftp1.x=0.5structureoutfile=etch_p1x_0.5.strgoathenainitinfile=origin.stretchsiliconallstructureoutfile=etch_all.str1.4.2刻蝕例子（續(xù)）Page

19goathenalinexloc=0.0spac=0.05linexloc=2.5spac=0.02linexloc=5.0spac=0.05lineyloc=0.0spac=0.02lineyloc=2.0spac=0.20initc.boron=1e16two.ddepositoxidethick=0.5div=10structureoutfile=mask.strtonyplotmask.stretchoxidestartx=1.5y=0.0etchcontinuex=1.5y=-0.6etch

continuex=3.5y=-0.6etchdonex=3.5y=0.0(1.5,0)(3.5,0)刻蝕由點連起來的多邊形區(qū)域(1.5,-0.6)(3.5,-0.6)刻蝕掩膜1.4.2刻蝕例子（續(xù)）Page

20goathenainitinfile=mask.stretch...tonyplotetchsiliconthick=0.5刻蝕硅厚度0.5μmetchdrythick=0.3表面材料刻蝕掉0.3μmrate.etchmachine=wetsiliconwet.etch\isotropic=0.5u.metchmachine=wettime=2minutes濕法刻蝕，各向同性速率0.5rate.etchmachine=plasma1siliconu.mrie\isotropic=0.1direct=0.9etchmachine=plasma1time=1minutesRIE刻蝕1.4.2刻蝕例子（續(xù)）Page

21goathenainitinfile=mask.stretch...tonyplotrate.etchmachine=PEMachplasmapressure=3.75tgas=300\tion=3000vpdc=32.5vpac=32.5lshdc=0.005lshac=0.0\Freq=13.56nparticles=4000mgas=40mion=40constant\energy.div=50qio=1.7e-19qcht=2.1e-19rate.etchmachine=PEMachplasmamaterial=siliconk.i=1.1etchmachine=PEMachtime=1minutes等離子體刻蝕：rate.etchmachine=MCETCHsiliconmc.plasma\ion.types=1mc.part1=20000mc.norm.t1=14.0\mc.lat.t1=2.0mc.ion.cu1=15mc.etch1=1e-05\mc.alb1=0.2mc.plm.alb=0.5mc.polympt=5000\