sic gan low vfcool mosfet超級(jí)mos coolmos800v9a048歐to220f n80t

1、NCE80T560D,NCE80T560,NCE80T560FN-Channel Super Junction Power MOSFETPackage Marking And Ordering InformationTO-263TO-220TO-220FTable 1.Absoluteum Ratings (TC=25)ParameterSymbolNCE80T560DNCE80T560NCE80T560FUnitDrain-Source Voltage (VGS=0V）VDS800VGate-Source Voltage (VDS=0V) AC (f>1 Hz)VGS±30V

2、Continuous Drain Current at Tc=25°CID (DC)99*AContinuous Drain Current at Tc=100°CID (DC)66*APulsed drain current (Note 1)IDM (pluse)3636*Aum Power Dissipation(Tc=25)Derate above 25°CPD1311.0533.20.265WW/°CSingle pulse avalanche energy (Note 2)EAS290mJAvalanche current(Note 1)IAR

3、2.8ARepetitive Avalanche energy ，tAR limited by Tjmax(Note 1)EAR1.4mJDeviceDevice PackageMarkingNCE80T560DTO-263NCE80T560DNCE80T560TO-220NCE80T560NCE80T560FTO-220FNCE80T560FGeneral DescriptionThe series of devices use advanced trench gate super junction technology and design to provide excellent RDS

4、(ON) with low gate charge. This super junction MOSFET fits the industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.Features New technology for high voltage device Low on-and low conduction losses Small package Ultra Low Gate Charge cause lower driving

5、 requirements 100% Avalanche Tested ROHS compliantApplication Power factor correction（PFC） Switched mode powers(SMPS) Uninterruptible Power Supply（UPS）Schematic diagramVDS800VRDS(ON)TYP480mID9ANCE80T560D,NCE80T560,NCE80T560F* limited byTable 2.um junction temperatureThermal CharacteristicTable 3.Ele

6、ctrical Characteristics (TA=25unless otherwise noted)Notes 1.Repetitive Rating: Pulse width limited byum junction temperature2. Tj=25,VDD=50V,VG=10V, RG=25ParameterSymbolConditionMinTypMaxUnitOn/off statesDrain-Source Breakdown VoltageBVDSSVGS=0V ID=250A800VZero Gate Voltage Drain Current(Tc=25)IDSS

7、VDS=800V,VGS=0V1AZero Gate Voltage Drain Current(Tc=125)IDSSVDS=800V,VGS=0V100AGate-Body Leakage CurrentIGSSVGS=±20V,VDS=0V±100nAGate Threshold VoltageVGS(th)VDS=VGS,ID=250A33.54VDrain-Source On-StateRDS(ON)VGS=10V, ID=4A480560mDynamic CharacteristicsInput CapacitanceClssVDS=50V,VGS=0V, F=

8、1.0MHz12001390pFOutput CapacitanceCoss75pFReverse Transfer CapacitanceCrss0.3pFTotal Gate ChargeQgVDS=480V,ID=9A, VGS=10V2542nCGate-Source ChargeQgs8nCGate-Drain ChargeQgd8.5nCSwitching timesTurn-on Delay Timetd(on)VDD=480V,ID=5A, RG=2.3,VGS=10V16nSTurn-on Rise Timetr11nSTurn-Off Delay Timetd(off)58

9、nSTurn-Off Fall Timetf10nSSource- Drain Diode CharacteristicsSource-drain current(Body Diode)ISDTC=25°C9APulsed Source-drain current(Body Diode)ISDM36AForward On VoltageVSDTj=25°C,ISD=9A,VGS=0V0.91.2VReverse Recovery TimetrrTj=25°C,IF=5A,di/dt=100A/s240nSReverse Recovery ChargeQrr1.1u

10、CPeak Reverse Recovery CurrentIrrm9AParameterSymbolNCE80T560D NCE80T560NCE80T560FUnitThermal，Junction-to-Case（um）RthJC0.953.76°C /WThermal，Junction-to-Ambient （um）RthJA6280°C /WParameterSymbolNCE80T560DNCE80T560NCE80T560FUnitDrain Source voltage slope, VDS 480 V,dv/dt50V/nsReverse diode dv

11、/dt，VDS 480 V,ISD<IDdv/dt15V/nsOperating Junction and Storage Temperature RangeTJ,TSTG-55.+150°CNCE80T560D,NCE80T560,NCE80T560FTYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (curves)Figure1. Safe operating areaFigure2. Safe operating area for TO-220FFigure3. Source-Drain Diode Forward Voltag

12、eFigure4. Output characteristicsFigure5. Transfer characteristicsFigure6. Static drain-source onNCE80T560D,NCE80T560,NCE80T560FFigure7. RDS(ON) vs Junction TemperatureFigure8. BVDSS vs Junction TemperatureFigure9.um ID vs Junction TemperatureFigure10. Gate charge waveformsFigure11. CapacitanceFigure

13、12. Transient Thermal ImpedanceNCE80T560D,NCE80T560,NCE80T560FFigure13. Transient Thermal Impedance for TO-220FNCE80T560D,NCE80T560,NCE80T560FTest circuit1）Gate charge test circuit & Waveform2）Switch Time Test Circuit：3）Unclamped Inductive Switching Test Circuit & WaveformsNCE80T560D,NCE80T5

14、60,NCE80T560FTO-263-3L Package InformationSymbolDimensions In MillimetersDimensions In InchesMin.Max.Min.Max.A4.324.570.1700.180A1-0.250.010b0.710.940.0280.037b21.151.400.0450.055c0.460.610.0180.024c21.221.400.0480.055D8.899.400.3500.370D18.018.230.3150.324E10.0410.280.3950.405E17.888.080.3100.318e2

15、.54 BSC0.100 BSCL14.7315.750.5800.620L12.292.790.0900.110L21.151.390.0450.055L31.271.770.0500.070NCE80T560D,NCE80T560,NCE80T560FTO-220-3L-C Package InformationSymbolDimensions In MillimetersDimensions In InchesMin.Max.Min.Max.A4.4004.6000.1730.181A12.2502.5500.0890.100b0.7100.9100.0280.036b11.1701.3

16、700.0460.054c0.3300.6500.0130.026c11.2001.4000.0470.055D9.91010.2500.3900.404E8.95009.7500.3520.384E112.65012.9500.4980.510e2.540 TYP.0.100 TYP.e14.9805.1800.1960.204F2.6502.9500.1040.116H7.9008.1000.3110.319h0.0000.3000.0000.012L12.90013.4000.5080.528L12.8503.2500.1120.128V7.500 REF.0.295 REF.3.400

17、3.8000.1340.150NCE80T560D,NCE80T560,NCE80T560FTO-220F Package InformationSymbolDimensions In MillimetersDimensions In InchesMin.Max.Min.Max.A4.5004.9000.1770.193A12.3402.7400.0920.108A22.5602.9600.1010.117b10.7000.9000.0280.035b21.1801.5800.0460.062c0.4000.6000.0160.024D9.96010.3600.3920.408E15.6701

18、5.9700.6170.629E16.5006.9000.2560.272E215.50016.1000.6100.634e2.540 TYP0.100 TYP3.0803.2800.1210.129L12.64013.2400.4980.521L13.0303.4300.1190.135NCE80T560D,NCE80T560,NCE80T560FATTENTION:Any and all NCE products described or contained herein do not have specifications that can handle applications tha

19、t require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your NCE representative nearest you before using any NCE pro

20、ducts described or contained herein in such applications.NCE assumes no responsibility for equipment failures that result from using products at values thatexceed, even momentarily, rated values (such asum ratings, operating condition ranges, or other parameters) listedin products specifications of

21、any and all NCE products described or contained herein.Specifications of any and all NCE products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, an

22、d functions of the described products as mounted in the customers products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customers products or equipment.NCE Power Semiconductor semico

23、nductor products fail give rise to accidents orCO., . strives to supply high-quality high-reliability products. However, any and all with some probability. It is possible that these probabilistic failures could events that could endanger human lives, that could give rise to smoke or fire, or that co

24、uldcause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design.In the e

25、vent that any or all NCE products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying an