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AnalysisofOpticalAbsorptioninNanowireArraysforPhotovoltaicApplications2013-11-7WangWeiping1.Finite-differencetime-domain(FDTD)simulations
Transfermatrixmethod(TMM)
AnalysisofOpticalAbsorptionin
SiliconNanowireArraysforPhotovoltaic
ApplicationsApsorption=1-Refectance-TransmittanceGeometricparameters:Diameter,Length,FillingratioFrequencyrange:1.1~4eVFixeddiameter:50nmInhigh-energyphotonregime,theabsorptionreachesaplateauregionsharedby
alllengthsInlow-energyphotonregime,theabsorptioninthefilmismoreefficient.thereflectanceofnanowiresissignificantlylowerthanthatofthethinfilmintheentirespectralrangeForlowfrequencies,theextinctioncoefficientof
siliconissmallandinterferenceeffectsexist,resultingintheoscillationofreflectanceandtransmittanceFixedperiod:100nm,wirelength:2.33umTheelectromagneticinteractionbetweennanowirescannotbeneglected!Ultimate
efficiencyORTheabsorptionefficienciesare5.80%,
9.47%,12.50%,and15.50%forthe50,65,and80nm
nanowiresandthethinfilm,respectively.Puttingaperfect
reflecting
mirror(100%reflectivity)onthebacksidetheoverallabsorptanceefficiencyisenhancedfrom12.50%to16.09%a=100nm,diameter=80nm,length=2.33umthenanowirestructureisalmostisotropicinthex-yplaneTEpolarizationhaslowerabsorptionthanTMpolarizationbecausethelatterhasanelectricfieldcomponentalongthewireaxiswhichfacilitatestheabsorptionCONCLUSION:smallreflectioninawidespectrumrangeinthelow-frequencyregime,applylight-trappingtechniquesoruselongerwiresAnalysisofopticalabsorptioninGaAsnanowire
arraysAperfectrefractiveindexmatchingatthetopinterface
betweentheairandNWAs,henceleadstogoodcouplingoftheincidentlightintotheNWAsFixedD/P:0.5,diameters:60~240nm1.ThelightabsorptionissignificantlyenhancedbytheincreaseofNWdiametersfrom60to180nminthelongwavelengthregion(photonicresonancemode).2.Diameterupto240nmleadstoadecreaseinabsorptionefficiency(enhancedlightreflectionatthetopsurfaceoftheNWAs).3.nanowireactsasananoscalecylindricalresonatorwhichcantraplightbymultipletotalinternalreflections.Theopticalgenerationrate:D/P=0.5,Length=2um,diameter=180nm,wavelength=800nm.1.Atanglesofincidenceupto60°,thetotalabsorptionismaintainedabove80%forbothTEandTMpolarizations.2.AhigherabsorptionisobservedinTMpolarizationthaninTEpolarizationConclusion:Theoptimalresultsforthenormalincidenceareevaluatedasdiameter=180nm,length=2μm,andD/P=0.5.2.Mieresonancetheory
length=2.5um,diameter=425nmshort-circuitcurrent:256pA,opencircuitvoltage:0.43,fillingfactor:0.52photogeneratedcurrentdensityof180mA/cm2maximumpower:57pw;efficiency:40%Methods-nanowiregrowthNanowiresweregrownonoxidizedSi(111)with100nmaperturesusingaself-catalysedmethodThep-dopingofthecorewasachievedbyaddingafluxofberylliumduringaxialgrowthThen-typedopingwasobtainedbyaddingsilicontothegrowthstepDevicefabricationSU-8wasspunontothesubstrateat4,000r.p.m.for45sandcuredwith1minultravioletlightand3minonahotplateat185oCAnetch-backwitha1–3minoxygenplasmaetchwasthenperformedtofreethenanowiretipThetopcontactwasdefinedbyelectron-beamlithographyfollowedbyevaporationofindiumtinoxide(ITO)Thebottomcontactwasobtainedbysilvergluingtotheback-sideofthewaferOpticalsimulationsofasinglenanowiresolarcellTheabsorptioncross-sectionisdefinedasTheabsorptioncross-sectioninnanoscalematerialsislargerthantheirphysicalsizeThelargestabsorptionisforananowirediameterof380nmExternalquantumefficiency(EQE)andScanningphotocurrentmeasurementsTheabsorptionboostinthedeviceisduetoanunexpectedlylargeabsorptioncross-sectionoftheverticalnanowiregeometryConclusionAremarkableboostinabsorptionisobservedinsingle-nanowiresolar
cells
thatisrelatedtotheverticalconfigurationofthenanowiresandtoaresonantincreaseinthe
absorptioncross-section.Theseresultsopenanewroutetothird-generationsolarcells,localenergyharvestersonnanoscaledevices
andphotondetectors.ScatteringefficienciesofMie
calculationstransversalmagnetic(TM)polarizationtransversalelectric(TE)polarizationnon-polarizedAbsorptionandScatteringofLightbySmallParticlesBohrenCFandHuffmanDR1998Opticalscattering
properties
of
GaAs
NWsCalculated
scattering
efficienciesQsca(red
lines)and
scaled
measuredspectra(blacklines)Leaky-moderesonances(LMRs)Thisworkshowsthatlight
absorptioninnanowiredevicesisnotjustafunctionofthe
intrinsicopticalmateri
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