多晶硅工藝中英文對照表

PAGEPAGE37多晶硅工藝中英文對照表硅烷(SiH4)：Silane二氧化硅(SiO2)：Silica一氯三氫硅(SiH3Cl)：Monochlorosilane二氯二氫硅(SiH2Cl2)：Dichlorosilane(DCS)三氯氫硅(SiHCl3)：Trichlorosilane(TCS)四氯化硅(SiCl4)：SiliconTetrachloride(STC)冶金級硅：Metallurgical-GradeSilicon(MG-Si)多晶硅：PolycrystallineSilicon(Polysilicon)單晶硅：SingleCrystal(Crystal)硅樹脂：Silicone硅油：SiliconOil載氣：CarrierGas粉末二氧化硅：FumedSilica光纖：Fiberoptil外延層：EpitaxialLayer非晶(無定形)層：AmorphousLayer多晶層：PolysiliconLayer化學汽相沉積工藝：Chemical-vapor-depositionprocesses棒狀、塊狀多晶硅：Rod、ChunkPolysilicon少數(shù)載流子壽命：MinorityCarrirlife-time晶格：CrystallographicLattice施主雜質(zhì)：Dopantimpurity受主雜質(zhì)：Acceptimpurity氧：Oxygen碳：Carbon重金屬：Heavymetals蒸汽壓：VaporPressure密度：Density熱容：HeatCapacity自由能：FreeEnergy標準焓：StandartEnthalpy標準熵：StandartEntropy表面張力：SurfaceTension粘度：Viscosity熱導率：ThermalConductivity轉(zhuǎn)換效率：ConversionEfficiency沉積速率：DepositionRate催化劑：Catalyticagent偶聯(lián)劑：Couplingagent表壓（磅/平方英吋）Psig：（poundspersquareinchgauge）蒸發(fā)：Evaporate溶解：Dissolve濃縮、凝縮：Condensation濃度、濃縮：Concentration吸收：Absorb吸附：Adsoption蒸餾：Dislillation置換：Replacement捕獲、收集：Capture分解：Decompose分裂：Dissociation污染：Contaminate腐蝕性：Corrosive汽態(tài)吸收：GaseousAbsorption全閉路循環(huán)：FullyClosed-loop水解反應：HydrolysisReaction氫氣中TCS的分子比率：MolerationofTCSinH2著火：Ignition發(fā)煙：Smoke起火：Fire燃燒：Burn爆炸：Explosion活性碳柱：ActivatedCarbonColumn薄霧淋洗塔：Fallingfilmtower流化床反應爐(FBR)：FluidiedBedReactor石英鐘罩反應爐：Quartzbelljarreactor金屬鐘罩反應爐：Metalbelljarreactor氯硅烷主要反應式：SiO2+2C→Si+2CO(由石英石制備工業(yè)硅)Si+3HCl→SiHCl3+H2(沸騰氯化制取三氯氫硅)3SiCl4+2H2+Si+Cu催化劑→4SiHCl3(~800℃3Mpa約37%的轉(zhuǎn)化率)SiHCl3+H2→Si+3HCl(~1375K)(三氯氫硅氫還原制備多晶硅)SiHCl3+HCl→SiCl4+H23SiHCl3→Si+2SiCl4+HCl+H22SiHCl3→SiH2Cl2+SiCl42SiH2Cl2→SiH3Cl+SiHCl3硅烷（SiH4）的四種制備方法1、由四氯化硅與氫化鋰反應4LiH+SiCl4→SiH4+4LiCl2、由硅鎂合金與氯化氨反應Mg2Si+4NH4Cl→SiH4+2MgCl+4NH33、由一氯三氫硅分解2SiH3Cl→SiH4+SiH2Cl24、Ethyl公司早期開發(fā)的硅烷制備工藝：它是用過磷酸鈣肥料工業(yè)的副產(chǎn)品（aby-productfromthesuperphosphatefertilizerindustry）氟硅酸（H2SiF6）作原料，主要的反應式為：H2SiF6+H2SO4→SiF4+2HFSiF4+LiH→SiH4+4LiF(在二苯基乙醚里，525K)LiH是用金屬鋰在礦物油里與氫反應而制得，收率可達90%HandbookofSemiconductorSiliconTechnology序Semiconductorsiliconhasbecomethemostimportantandcharacteristicmaterialofourage-thesiliconage.Ithasachievedthisdistinctionwitharathermodestvolumeofproductionascomparedtothatofotherbasicindustrialmaterials.Forexample,in1989,about6000metrictonsofpolysiliconwereproducedworldwideforsiliconcrystalgrowth,resultingin3000tonsofcrystalproducedintheUnitedStates,Japan,andEurope.Thissiliconcrystalwasconvertedtoapproximately1500millionsquareinchesofwafer,orabout90millionindividualwafersusedforintegratedcircuitanddiscretedeviceproduction.Forcomparison,theannualworldwideproductionofsteelandaluminumamountstohundredsofthousandsoftons.半導體硅材料已成為我們這個時代硅時代最重要和最有代表性的材料，雖然它的產(chǎn)量還不夠大，但其重要性卻引人矚目。例如，在1989年，全球生產(chǎn)約6000噸用于生產(chǎn)單晶的多晶硅，而僅在美國、日本和歐洲就以此生產(chǎn)了3000噸單晶硅。然后，這些單晶硅又轉(zhuǎn)換成了大約150億平方英吋硅片，或大約9000萬片分別用于IC和分立器件的各類硅片，這些硅片的作用可與全球每年成百上千噸的鋼鐵和鋁材相比擬。Inspiteofitsrelativelysmallvolume,theimpactofsiliconproductionismultipliedmanifoldbythedeviceandelectronicsystemsthatarebasedonitsproperties.Therehavebeenmanyattemptstofinedimprovedmaterialswith“better”propertiesthansilicon,butcandidatessuchassapphire,siliconcarbide,diamondandⅢ-Ⅴmaterialsalllacksomeessentialingredientsformanufacturinginquantity.Examplesofthesemissingingredientsinclude:easeofgrowinglargeperfectcrystals,freedomfromextendedandpointdefects,existenceofanativeoxide,orotheressentialproperties,manyofwicharediscussedinthisbook.盡管它相對量較小，但是硅材料的影響力卻很巨大，它通過其后的分立器件和電子系統(tǒng)（thedeviceandelectronicsystem）的固有特性發(fā)揮出巨大的倍增效用（multpliedmanifold）。近來，人們也付出巨大努力去尋找性能優(yōu)于硅的其它改進型材料（impovedmaterials）,諸如蘭寶石（(sapphire)、碳化硅（siliconcarbide）、金剛石（diamond）以及Ⅲ-Ⅴ族化合物（Ⅲ-Ⅴmateriars）,但這些材料都缺乏大生產(chǎn)方面的一些基本要素，這些要素包括：是否易于生長大尺寸的完美單晶（easeofgrowinglargeperfectcrystal）、產(chǎn)品外延的自由度（freedomfromextended）、點缺陷（pointdefects）、有自氧化物生成（existenceofanativeoxide）或其它一些基本特性等，這在本手冊中將會陸續(xù)討論。Basicinformationaboutsilicon-howitismade,anditsimportantphysical,chamicalandmechanicalproperties-ishardtofind,andoneofthemotivesforthisvolumeistomakefundamentalinformationavailableinhandbookform.Thisalsoabsolvestheauthorsfromhavingtoincludetherelevantpapersintheirfieldthatwerepublishedinthelasttwenty-fourhours.有關(guān)硅的一些基礎(chǔ)資料比如如何制備以及它們的一些重要的物理、化學和機械特性一時難于查找，本手冊的目的之一是匯編了這些方面的一些有用的基本信息，本手冊在出版前的24小時里，作者還是刪去了應該包括在其中的相關(guān)章節(jié)(Thisalsoabsolvestheauthorsfromhavingtoincludetherelevantpapersintheirfieldthatwerepublishedinthelasttwenty-fourhours.)。Earlyworkinsiliconscienceandtechnologywasexcellent,asevidencedbythefacttheoriginalcrystalgrowthprocessisstillusedinmanufacturingtoday.ThatprocesswasdevelopedatBellLaboratoriesbyTealandBuehler,followingtheoriginalcrystalgrowthprocessdevelopedforgermaniumbyTealandLittle.Thisinitialworkwasdoneinspiteofdeviceengineerswhowereconvincedthatpolycrystallinematerialwouldbeadequatefortransistormanufacturing.硅材料科學技術(shù)的早期工作是非常出色的，很明顯的事實是：原始單晶的生長工藝（originalcrystalgrowthprocess）一直沿用到今天。這一工藝是貝爾實驗室的Teal和Buehler開發(fā)成功的，據(jù)此，Teal和Little還開發(fā)了鍺（Germanium）的原始單晶生長工藝。早期的工作使得設(shè)計工程師們（deviceengineers）感到困惑，因為他們確信多晶材料就能適合于制作晶體管。Inthepast,therehasbeenonlyonebookonsemiconductorsilicontechnology,byWaltRunyan,formerlywithTexasInstruments.Followinghasleadandinspiration,wehaveundertakentoproduceaworkofsimilarutility,sincehasoriginalvolumehasgoneoutofprint.Todayitrequirestenpeopletodowhathewasabletodobyhimself.Inpartthisistestimonytothedevelopmentthathasoccurredinalloftheseareas,andeachchapteroftheoriginalworkisnowaseparatediscipline.Wearefortunatetohaveexcellentcontributorsforeachofthetopicsdiscussedhere,butwewishtosaluteDr.Runyanforhisoriginalandenduringcontributiontothefield.在過去，曾有德洲儀器公司的WaltRunyan出版過一本有關(guān)半導體硅技術(shù)方面的書，根據(jù)他的啟示和靈感（Followinghisleadandinspiration），我們承擔了出版工作，使得他先前的文稿得以出版。而現(xiàn)在，我們卻需要十個人來作他自己作過的工作（譯者注：本手冊的撰稿人共10人），部分說來，這是對過去各方面工作的匯總，現(xiàn)在又把原先的每一章分成了幾個章節(jié)。我們是幸運的，我們在手冊中討論的每一個題目都有極好的貢獻（excellentcontribution），，但我們還是要向Dr.Runyan在這一領(lǐng)域中已有的和持續(xù)的貢獻表示敬意。LosAltosJanuuary1990William.C.O’MaraHandbookofsemiconductorsilicontechnologyContents(目錄)Siliconprecursors:Theirmanufactureandproperties(硅原料的制備和特性)Lee.P.HuntIntroduction（序言）Precursormanufacture（前期制備）Metallurgical-gradesilicon(MG-Si)（冶金級硅）Trichlorosilane（三氯氫硅）Silicontetrachloride（四氯化硅）Dichlorosilance（二氯二氫硅）Silane（硅烷）Physicalpropertiesandcriticalconstants（物理特性和臨界常數(shù)）Non-temperaturesensitivepropertiesandconstant（非溫度敏感特性和常數(shù)）Vaporpressure（蒸汽壓）Density(Liquid)（密度）（液態(tài)）Heatcapacity(liquid)（熱容）（液態(tài)）Heatcapacity(gas)（熱容）（氣態(tài)）Freeenergy,standardenthalpy,andstandardentropyofformation（生成的自由能、標準焓和標準熵）Enthalpyofvaporization（汽化焓）Surfacetension（表面張力）Viscosity(gas)（粘度）（氣態(tài)）Viscosity(liquid)（粘度）(液態(tài))Thermalconductivity(gas)（熱導率（氣態(tài)）Thermalconductivity(liquid)（熱導率）（液態(tài)）Safety（安全）Healthhazards（對健康的危害）Fireandexplosionhazards（防火和防爆炸危害）Materialofconstruction（建筑材料）Appendix（附錄）References（參考文獻）Polysiliconpreparation(多晶硅制備)Leo.C.RogersThehistoryofpolycrystallinesilicon（多晶硅的發(fā)展史）Earlyandpresentpolysiliconmanufacturers（早期及現(xiàn)有的多晶硅制造商）Semiconductor-gradepolycrystallinesiliconprecursors（半導體級多晶硅的原料）Silica(SiO2)（二氧化硅）Silicones（硅樹脂）MG-Siandferrosilicon（冶金級硅和硅鐵）SiliconpuritybeyondMG-Si（純度遠高于冶金級硅的純硅）Feedstocksforsemiconductor-Gradepolysilicon(半導體級多晶硅的原料)Semiconductor-Gradepolysilicon（半導體級多晶硅）Potpourriofothermethodstomanufacturepolysilicon（制備多晶硅的其它方法集錦）Polysiliconproductiontechnology(mostpracticed)(多晶硅生產(chǎn)技術(shù))（最常用的方法）Thefeedstocksystem（原料系統(tǒng)）Polysiliconreactors（多晶硅反應爐）GeneralBell-jarreactordesign（通用型鐘罩爐的設(shè)計）GeneralBell-jarreactoroperation（通用型鐘罩爐的操作）Reactoroperationcriteria（反應爐的操作標準）Depositionobjectivesforpolysilicon（多晶硅的沉積目標）Reactorexhaust-gasrecovery-generalpractice（反應爐尾氣回收——通行慣例）Reactorexhaust-gasrecovery-generaldesign

(反應爐尾氣回收——通用的設(shè)計)Specificreactorsexhaust-gasrecoverydesign(特效的反應爐尾氣回收設(shè)計)Lever-onerecoverysystem（一級回收系統(tǒng)）Lever-tworecoverysystem（二級回收系統(tǒng)）Closed-looprecoverysystem（閉路回收系統(tǒng)）Capitalandoperatingcosts（投資和運作成本）Alternativechlorine-based,Semiconductor-Grade,Polysiliconfeedstocks（以氯基物為半導體級多晶硅原料的選擇）Silaneasapolysiliconfeedstocks（以硅烷作為多晶硅原料）Silanepurity—grade6to10forBell-jarreactorpolysilicon（硅烷的純度－對鐘罩爐為6～10級）Silanemanufacturingcost—grade4（硅烷的制造成本－4級）Silanesafety—grade4forchlorosilane-to-silane,and5forhexafluorosilicic-silane（硅烷的安全性－由氯硅烷到硅烷的為4級，以氟硅酸制硅烷的為5級）Silanealternativesources—grade0（硅烷的可選擇來源－為0級）Silanetransportability—grade2（硅烷的運輸－為2級）Silanestorage—grade4（硅烷的儲存－為4級）Silaneby-productsrecovery—grade2（硅烷副產(chǎn)品的回收－為2級）Silaneby-productsuse—grade5forsilane-to-silane;grade3forhexafluorosilicic-silane（硅烷副產(chǎn)品的利用－由硅烷到硅烷為5級，由氟硅酸到硅烷為3級）Silanedepositionrate—grade3（硅烷的沉積速率－為3級）Silaneconstruction—grade5forchlorosilane-to-silane;and3forhexafluorosilicic-silane(硅烷的建筑－由氯硅烷到硅烷為5級，由氟硅酸到硅烷為3級)Silanereactorchoices—grade5goingto7（硅烷反應爐的選擇－5～7級）Silaneelectricalenergyusage—grade5/10(硅烷的電能使用－5/10級)Dichlorosilaneasapolysiliconfeedstock（以SiH2Cl2作為多晶硅的原料）Dichlorosilanepurity—grade7（SiH2Cl2的純度－為7級）Dichlorosilanemanufacturingcost—grade6（SiH2Cl2的制造成本－為6級）Dichlorosilanesafety—grade3（SiH2Cl2的安全性－為3級）Dichlorosilanealternativesources—grade0（SiH2Cl2可選擇來源－為0級）Dichlorosilanetransportability—grade2（SiH2Cl2的運輸－為2級）Dichlorosilanestorage—grade3(SiH2Cl2儲存－為3級)Dichlorosilaneby-productsrecovery—grade3（SiH2Cl2副產(chǎn)品回收－為3級）Dichlorosilaneby-productsuse—grade3（SiH2Cl2副產(chǎn)品的利用－為3級）Dichlorosilanedepositionrate—grade5（SiH2Cl2的沉積速率－為5級）Dichlorosilaneconstructionmethods—grade5（SiH2Cl2的建筑方式－為5級）Dichlorosilanereactorchoices—grade3（SiH2Cl2的反應爐選擇－為3級）Dichlorosilaneelectricalenergyusage—grade5（SiH2Cl2的電能利用－為5級）Trichlorosilaneasapolysiliconfeedstock（以SiHCl3作為多晶硅原料）Trichlorosilanepurity—grade7forBell-jarpolysilicon;grade5forFBRpolysilicon（SiHCl3的純度－對鐘罩爐為7級，對FBR爐為5級）Trichlorosilanemanufacturingcost—grade7（SiHCl3的制造成本－為7級）Trichlorosilanesafety—grade9（SiHCl3的的安全性－為9級）Trichlorosilanealternativesources—grade10（SiHCl3的可選擇來源－為10級）Trichlorosilanetransportability—grade9(SiHCl3的運輸－為9級)Trichlorosilanestorage—grade9（SiHCl3的的儲存－為9級）Trichlorosilaneby-productsrecovery—grade9（SiHCl3的副產(chǎn)品的回收－為9級）Trichlorosilaneby-productsuse—grade8(SiHCl3的副產(chǎn)品的利用－為8級)Trichlorosilanedepositionrate—grade7（SiHCl3的沉積速率－為7級）Trichlorosilaneconstructionmethods—grade5（SiHCl3的的建筑方式－為5級）Trichlorosilanereactorchoices—grade9（SiHCl3反應爐的選擇－為9級）Trichlorosilaneelectricalenergyusage—grade4（SiHCl3的電能使用－為4級）Silicontetrachlorideasapolysiliconfeedstock（以SiCl4作為多晶硅的原料）Silicontetrachloridepurity—grade10（SiCl4的純度－為10級）Silicontetrachloridemanufacturingcost—grade7（SiCl4的制造成本－為7級）Silicontetrachloridesafety—grade10（SiCl4的安全性－為10級）Silicontetrachloridealternativesources—grade9goingto3（SiCl4的可選擇來源－為9～3級）Silicontetrachloridetransportability—grade9（SiCl4的運輸－為9級）Silicontetrachloridestorage—grade9(SiCl4的儲存－為9級)Silicontetrachlorideby-productsrecovery—grade10（SiCl4副產(chǎn)品的回收－為10級）Silicontetrachlorideby-productsuse—grade9(SiCl4副產(chǎn)品的利用－為9級)Silicontetrachloridedepositionrate—grade4(SiCl4的沉積速率－為4級)Silicontetrachlorideconstructionmethods—grade10（SiCl4的建筑方式－為10級）Silicontetrachloridereactorchoices—grade9（SiCl4反應爐的選擇－為9級）Silicontetrachlorideelectricalenergyusage—grade1（SiCl4電能的使用－為1級）Alternatepolysiliconreactorselection（備用的多晶硅反應器的選擇）Free-spacepolysiliconreactors（自由空間多晶硅反應器）PolysiliconFBRs（多晶硅沸騰床反應器）Evaluationofsemiconductor-gadepolysilicon（對半導體級多晶硅的評價）Futureofpolysilicon（未來的多晶硅）References（參考文獻）Crystalgrowthofsilicon(單晶生長)H.MingLiawIntroduction(序)Meltgrowththeory（熔融生長理論）Thermodynamicconsideration(熱力學考慮)Heatbalanceincrystalgrowth(單晶生長中的熱平衡)Crystalgrowthmechansisms(單晶生長機理)Masstransportofimpurities(雜質(zhì)的傳遞)Constitutionalsupercooling（結(jié)晶過冷現(xiàn)象）PracticalaspectofCzcrystalgrowth（Cz單晶生長的實踐方式）Crystalpullers（拉晶爐）Dislocation-freegrowth（無位錯生長）Growthformsandhabits（生長的晶向和結(jié)晶特性）Automaticdiametercontrol（自動化的直徑控制）Dopingtechniques（摻雜技術(shù)）Variationsinradialresistivity（徑向電阻率變化）OxygenandCarboninsilicon（硅中的氧和碳）TechniquesforcontrolOxygen（控氧技術(shù)）ControlofCarboncontect（碳含量的控制）NovelCzochraskicrystalgrowthSemicontinuousandcontinuousCz（半連續(xù)和連續(xù)Cz拉晶）MagneticCzochraski(MCz)crystalgrowth（磁場法Cz單晶生長）Squareingotgrowth（方錠生長）WebandEFGtechniques（蹼狀硅及EFG技術(shù)）TheFloat-Zonetechnique（Fz生長技術(shù)）Trendsinsiliconcrystalgrowth（硅單晶生長的趨勢）Summaryandconclusion（簡要總結(jié)）Reference(參考文獻)Siliconwaferpreparation(硅片制備)RichardL.LaneIntroduction(序)Waferpreparationprocesses（硅片制備工藝）Siliconremovalprinciples（硅的清潔處理方法）Mechanicalremoval（機械處理）Chemicalremoval（化學處理）Chemical-Mechanicalremoval(polishing)（機械－化學處理）（打磨）Cryctalshaping（單晶整型）Cropping（切頭尾）Grinding（滾磨）Orientation/Identificationflats（定向/標識定位面）Etching（腐蝕）Wafering（切片）Historical（歷史回顧）TheIDblade（內(nèi)園切割）Bladetensioning（切割張力）Process(工藝)Crystalmounting（晶體安裝）Orientation（定向）Bladecondition（切割調(diào)整）Waferingvariables（切片變量）Edgecontouring（倒角，刀口整形）Background（背景）ReasonsforEdgecontouring（倒角的原因）Siliconchipsandwaferbreakage（切口破損和硅片破裂）Latticedamage（晶格缺陷）Epitaxialedgecrown（外延邊緣凸起）Photoresistedgebead（光刻時邊緣波紋）Commercialequipment（通用設(shè)備）Laping（研磨）Background（背景）Currenttechnology（現(xiàn)有技術(shù)）Wafergrinding（硅片研磨）Polishing（拋光）Descriptionofpolishing（拋光描述）Historicalbackground（歷史背景）Currentpolishingpractice（現(xiàn)有拋光實踐）Polishingvariables（拋光變量）Theoptimumpolishingprocess（適宜的拋光工藝）Othermethodsofpolishing（拋光的其它方法）Cleaning（清洗）Mechanicalcleaning（機械清洗）Chemicalcleaning（化學清洗）Othercleaningmethods（其它清洗方法）Equipment（設(shè)備）Miscellaneousoperations（各色各樣操作）Heattreatment（熱處理）Backsidedamage（背損傷）Wafermarking（硅片刻標記）Packaging(包裝)In-processmeasurements（在線測量）Waferspecificationsandindustrystandards（硅片的特征參數(shù)和工業(yè)標準）9.2Mechanicalmeasurements（機械測量）9.2.1Diameterandflatlength（直徑和定位面長度）9.2.2Crystallographicorientation（晶向定向）9.2.3Thicknessandthicknessvariation（厚度和厚度偏差）9.2.4Flatness（定位面）9.2.5Bowandwarp（彎曲度和翹曲度09.2.6Edgecontour(邊緣輪廓)9.2.7Surfaceinspection（表面檢測）Discussion（討論）Reference（參考文獻）5.Siliconepitaxy(硅外延)RorbetB.HerringIntroduction（序言）HomoepitaxyandHeterepitaxy（均相外延和異相外延）Applicationsofepitaxiallayers(外延層的應用)Discreteandpowerdevices（分立器件和功率器件）Integratedcircuits（集成電路）EpitaxyforMOSDevices（MOS器件用外延）EpitaxyasthecomplementtoIonimplantation（外延作為離子注入的補充）Techniquesforsiliconepitaxy（硅外延技術(shù)）Chemicalvapordeposition（化學汽相沉積）（CVD）Molecularbeamepitaxy（分子束外延）（MBE）2.2.1MBE-processdescription（分子束外延工藝描述）2.2.2MBEequipment(分子束外延設(shè)備)Liquidphaseepitaxy（液相外延）（LPE）Solidphaseregrowth（固相再生長）RegrowthofAmorphouslayers（非晶層的再生長）Recrystallizationofthinfilms（薄層單晶再生長）Surfacepreparationforsiliconeptaxialgrowth（硅外延生長的表面處理）SurfacecleaningandOxideremoval（表面清潔和氧化除雜）Surfaceprecleans（表面予清洗）Dryingthewafers（干燥硅片）Insitugasphasecleans（就地汽相清洗）Removalofthesurfaceoxide（表面氧化除雜）Removalofadsorbedwatervapor（水汽吸附除雜）Oxideremoval（氧化除雜）Carbononthesurface（表面的碳）Insituetching（就地腐蝕）GrowthofsiliconepitaxybyCVD（CVD硅外延生長）Growthchemistries（生長的化學過程）Disproportionation（歧化反應）Pyrolyticdecomposition(高溫分解)Reductionofchlorosilanes（氯硅烷減?。〨rowthkineticsandmechanisms（生長動力學和生長機制）Kineticsofgrowthfromsilane（用硅烷的生長動力學）Kineticsofgrowthfromdichlorosilane（用SiH2Cl2的生長動力學）Kineticsofgrowthfromtrichlorosilaneandsilicontetrachloride（用SiHCl3和SiCl4的生長動力學）Nucleation(成核現(xiàn)象)Homogeneousnucleation(同相的成核現(xiàn)象)Heterogeneousnucleation（異相的成核現(xiàn)象）Dopantincorporation（混合摻雜法）5.1Intentionaldopantincorporation(有意的混合摻雜)Measurementsofdopantincorporation（混合摻雜的測量）Effectoftemperature（溫度的影響）Effectofgrowthrate（生長速率的影響）Effectofpressure（壓力的影響）Unintentionallyaddeddopants(autodoping)（無意增加的摻雜）（自動摻雜）Sourcesofautodoping（自動摻雜的來源）Lateralautodoping（側(cè)向自動摻雜）Suppressionofautodoping（自動摻雜的抑制）Surfacemorphologyandepitaxialdefects（表面形態(tài)和外延缺陷）Substrateorientationeffects（底層晶向的影響）Spikesandepitaxialdefects（疣狀物和外延缺陷）Growthspikes（生長型疣狀物）Epitaxialstackingfaults（外延堆垜缺陷）Hillocksandpyramidsinepitaxallayers（外延層上的小丘和錐角）Dislocationsandslip（位錯和滑移）Micropreciptates(S-pits)（微沉淀）（S-坑）Patternshiftanddistortion（位移和扭曲模型）Patterneddiffusions(buriedlayers)(模型的擴散)（埋層）Patterneddistortionandpatternedshift（模型扭曲和模型位移）Patternedshiftdefinitions（模型滑移的定義）Roleofcrystallographyofsurface（表面結(jié)晶學的作用）Summaryofshiftanddistortioneffects（滑移和扭曲作用小結(jié)）EquipmentforepitaxybyCVD（CVD外延設(shè)備）ClassificationofcommercialreactorsbyflowGeometry（采用幾何流程的商用反應爐的分類）Horizontalreactors（水平反應爐）Verticalflowreactors（垂直流反應爐）CylinderreactorGeometry（圓柱型反應爐）Otherreactortypes（其它反應類型）Heatingtechniques（加熱技術(shù)）Resistanceheating（電阻加熱）R.F.inductionheating（感應加熱）Radiantheating（輻射加熱0Combinedmodeheating(組合方式加熱)Operatingpressureofreactors（反應爐的操作壓力）Trendsforthefutureinsiliconepitaxy（未來硅外延的發(fā)展趨勢）Reference參考文獻6.Siliconmaterialsproperties（硅材料的特性）W.MurrayBullisIntroduction（序）Crystallographicproperties（晶格特性）Siliconcrystalstructure（硅晶體結(jié)構(gòu)）Crystalhabit（晶體習性）Crystalorientation（晶向）Crystaldefects（晶體缺陷）Pointdefects（點缺陷）Extendeddefects（擴展缺陷）Electricalproperties（電特性）Bandsandbondsinpuresiliconcrystal（純硅晶體的能帶和禁帶）Dopantimpurities（摻雜）Statistics（統(tǒng)計學數(shù)據(jù)）Fermifunction（費米能級）Density-of-statesfunction（能態(tài)密度）Intrinsiccarrierdensity（本征載流子濃度）Qualitativedescriptionoftheenergystructureofsilicon（硅的能級的定性描述）Actualbandstructureofsilicon（硅的實際能帶結(jié)構(gòu)）Electronicconduction（導電性）Electricalcharacterization（電特性描述）Conductionathighelectricfields（高電場下的導電性）Conductioninamagneticofsilicon（場下硅的導電性）Deep-levelimpurities（深能級雜質(zhì)）Rectification（整流作用）Thermoelectriceffects（熱電效應）Opticalproperties（光學特性）Indexofrefractionandreflectivity（折射率和反射率）Antireflectioncoatings（減反射層）Relationshipsbetweenwavelength,wavenumber,andphotonenergy（波長、波數(shù)和光能間的關(guān)系）Absorption（吸收）Photoconductivity（光導率）Latticeabsorption（晶格吸收）Impurityabsorption（雜質(zhì)吸收）Opticalmethodsfordetectingdopantimpurities（光學法檢測雜質(zhì)）Emissivity（發(fā)射率）Thermalandmechanicalproperties（熱特性和機械特性）Elasticconstants（彈性系數(shù)）Young’sModulus（楊氏模數(shù)）Modulusofcompression（擠壓模數(shù)）ShearModulus（剪切模數(shù)）Poisson’sratio（泊松比率）（指棒材沿軸向拉伸時橫向收縮應變與縱向拉伸應變之比）Otherrelationships（其它相關(guān)數(shù)據(jù)）Piezoresistivity(壓電電阻效應)Mechanicalstrengthandplasticdeformation（機械強度和可塑形變）Plasticdeformation（可塑形變）Warp（彎曲）Fracture(破裂)Thermalexpansion（熱擴散）Thermalconductivity（熱傳導）Hardness（硬度）Otherphysicalandthermodynamicproperties（其它物理及熱力學特性）references（參考文獻）7、Oxygen、CarbonandNitrogeninSilicon（硅中的氧、碳和氮）WillianC.O’MaraIntroduction（序言）Propertitiesofdissolvedoxygeninsilicon（硅中溶解氧的特性）Solubility（溶解度）Difusivity（擴散系數(shù)）Segregationcoefficient（偏析系數(shù)）Phasediagram（相圖）Oxygenclusterandprecipitateformation（氧群和沉淀物的形成）Precipitatenucleation（沉淀物的成核現(xiàn)象）Precipitationfromsolution（由溶解引起的沉淀）Influenceofthermalhistoryonprecipitate（沉淀物上的熱歷史的影響）Ingotcoolinghistory（晶錠的冷卻歷程）Microscopicgrowthfluctuations（顯微觀測晶體生長波動）Retardationofnucleation（成核的延遲現(xiàn)象）Influenceofsubstratedopingonoxygenprecipitation（在氧沉淀上進行基體摻雜的影響）Oxidationinducedstackingfaults（氧化誘導堆垜缺陷）Influenceofcrystalgrowth（晶體生長的影響）Influenceofdopant（摻雜的影響）Influenceoftemperatureandtime（溫度和時間的影響）Eliminationofnearsurfacestackingfaults（消除近表面的堆垜缺陷）Oxygenoutdiffusionandwafersurfacedenuding(氧散射和硅片表面剝蝕)Outdiffusion（散射）Modelforoutdiffusion（散射模型）Measurementofdenudedzonedepth（剝蝕區(qū)深度的測量）EffectofAmbient（環(huán)境的影響）Intrinsicgettering（內(nèi)吸除）Intrinsicprecipitation（內(nèi)沉淀）Denudingandprecipitationfordeviceprocessing(器件工藝的剝蝕和沉淀)Quantitativeandqualitativemeasurementofoxygen（氧的定量和定性測量）Quantitativeanalysisbychemicalandphysicalmethods（化學和物理法的定量分析）Samplefusionanalysis（采樣溶解分析）Activationanalysis（活化分析）SecondaryIonMassSpectrometry（二次離子質(zhì)譜分析）Infraredabsorption（紅外吸收）Absorptionat9μm（在9μm處的吸收）Interferencesinmeasurementofoxygencontent（氧含量的相干干涉測量）Interpretationoftheinfraredspectrumofoxygen(氧的紅外線譜解釋)TheSiO2“Molecule”（SiO2分子）Lowtemperatureandfarinfraredspectra（低溫和遠紅外光譜）Assignmentofthe513-1cmoxygenabsorption（513-1Substitutionaloxygeninsilicon（硅中的替代氧）Propertiesofsubstitutionaloxygen（替代氧的特性）TheAcenter（A中心）Oxygenthermaldonor（氧熱施主）Occurrenceandproperties（成因和特性）Kineticsofformation（成因動力學）Kineticsmodelsfordonorformation（施主形成的動力學模型）Kineticsofannihalation（消除的動力學）Influencesondonorformation（施主形成的影響）Effectofdopants（摻雜的影響）Effectofcarbon（碳的影響）Oxygenbehavioratdonorformationtemperature（施主形成時的氧行為）Structuralmodelsforoxygenthermaldonor（氧熱施主的結(jié)構(gòu)模型）ThermaldonorinGermanuim（鍺里的熱施主）Infraredabsorption（紅外吸收）Otherexperimentalresults（其它實驗結(jié)果）Modelfortheoxygenthermaldonor（氧熱施主模型）Mechanicalstrengtheningandwaferwarpage（機械強度和硅片的翹曲度）Dislocationgenerationinsilicon（硅中位錯的產(chǎn)生）Slipandbow（滑移和彎曲）Roleofoxygen（氧的作用）Effectsduetoprecipitationofoxygen（因氧沉淀而帶來的影響）Deviceprocessing（器件工藝）Thermalcyclesandprocesssimulation（熱循環(huán)和工藝模擬）NMOSCircuits（NMOS電路）CMOSCircuits（CMOS電路）BipolarCircuits（雙極性電路）CCDdevice（CCD器件）Carboninsilicon（硅中的碳）Solubility（溶解度）Segregationcoefficient（偏析系數(shù)）Diffusivity（擴散率）Stateofcarboninsilicon（硅中碳的狀態(tài)）Complexeswithoxygen（與氧結(jié)合）Formationofprecipitatesduetocarbon（碳沉淀的形成）Nitrogeninsilicon（硅中的氮）Solubilityandphasediagram（溶解度和相圖）