新片WAT測試講解PPT學(xué)習(xí)教案

1、會計學(xué)1新片新片WAT測試講解測試講解WAT Introduction1. WAT是什么2. WAT系統(tǒng)介紹3. WAT測試項(xiàng)目及方法第1頁/共25頁Wafer Acceptance Test（晶片允收測試） 半導(dǎo)體硅片在完成所有制程工藝后，針對硅片上的各種測試結(jié)構(gòu)所進(jìn)行的電性測試。 通過對WAT數(shù)據(jù)的分析，我們可以發(fā)現(xiàn)半導(dǎo)體制程工藝中的問題，幫助制程工藝進(jìn)行調(diào)整。 WAT是什么是什么? 第2頁/共25頁WAT系統(tǒng)介紹Manual ProberAgilent 4284A CV MeterAgilent 4156A IV MeterCascade Manual Prober第3頁/共25頁WAT

2、系統(tǒng)介紹Agilent 4070 systemTEL P8XLAgilent 4070第4頁/共25頁WAT系統(tǒng)介紹HP 4070 ServerAgilent 81110A Pulse Generator Agilent 4284A CV MeterAgilent E4411B Spectrum AnalyzerAgilent 4070 內(nèi)部結(jié)構(gòu)內(nèi)部結(jié)構(gòu)Agilent 3458ADigit Multimeter第5頁/共25頁第6頁/共25頁WAT測試項(xiàng)目1.MOS device2.Field Device3.Junction4.Gate Oxide5.Resistor6.Bipolar De

3、vice7.Layout Rule Check常見的幾種器件結(jié)構(gòu)常見的幾種器件結(jié)構(gòu)第7頁/共25頁1. MOS Device第8頁/共25頁第9頁/共25頁Item nameMethod of measurementIdsVd=Vg=Vdd, Vs=Vb=0, measure Id, Ids=Id/WidthVt0Vd=0.1V, Vs=Vb=0, sweep Vg from 0V to 3V,use maximum slope method,Vt0=Xintercept 1/2*VdVt1Vd=0.1V, Vs=Vb=0, sweep Vg from 0V to 2V,measureId,V

4、t1=VgId=0.1uA*Width/LengthIsubVd=Vdd, Vs=Vg=0, sweep Vg from 0 to Vdd to get maximum Isub currentIoffVd=1.1Vdd, Vg=Vs=Vb=0, measure Id, Ioff=Id/WidthBvdVg=Vs=Vb=0, sweep Vd from 0V to Vdstop(3Vdd), measure Id, Bvd=VdId=0.1uA/um以以 NMOS 為例：為例：第10頁/共25頁2. Field Device第11頁/共25頁Item nameMethod of measure

5、mentVtVd=1.1Vdd, sweep Vg from 0V to Vgstop(3Vdd),measure Id, Vt=VgId=10nA/umIleakVg=Vd=1.1Vdd, measure Id, Ileak=Id/WidthVptVg=1.1Vdd, sweep Vd from 0V to Vdstop(3Vdd),measure Id, Vpt=VdId=10nA/umWAT Item Name(以Poly Nfield為例) : VtNfpS (field Vt)IleakNfpSVptNfpS (punchthrough Vt)第12頁/共25頁3. Junction

6、第13頁/共25頁WAT Item Name (以N+/PW junction為例) : CNjIleakNjBvNjItem nameMethod of measurementCjVg=0V, Vb=GND, apply a 0.03V AC signal to measure C value, Cj=C/AreaIleakVg=1.1Vdd, measure Ig, Ileak=Ig/AreaBvVb=0, sweep Vg from 0V to Vgstop(3Vdd), measure Ig, Bv=VgIg=100pA/um2第14頁/共25頁4. Gate Oxide第15頁/共2

7、5頁WAT Item Name(以PW gate oxide為例) : Cgpw ToxpwBvCgpwItem nameMethod of measurementCoxVg=Vdd, Vb=GND, apply a 0.03V AC signal to measure C value, Cox=C/AreaToxVg=GND, Vb=Vdd, apply a 0.03V AC signal to measure Cox value, Tox=(o *ox *Area)/CoxBvVb=0, sweep Vg from 0V to Vgstop(3Vdd), measure Ig, Bv=Vg

8、Ig=100pA/um2NOTE: If there has a dummy capacitor, Cdummy should be subtracted.(Cox=Cox-Cdummy)第16頁/共25頁5. Resistor第17頁/共25頁Item nameMethod of measurementRsVh=1V, measure Ih, Rs=(Vh/Ih)/SqrSheet resistance (RsN+/P+/NW/Poly/Metal)第18頁/共25頁N+N+N+P WellPadPadM1Contact Resistance (RcN+/P+/Via)Item nameMe

9、thod of measurementRcVh=1V, Vl=GND, measure Ih, Rs=(Vh/Ih)-(Rsn*Wn/Ln+Rsm*Wm/Lm)*1/2*Ncon)/NconNote: Rc need to subtract active & Metal resistor, RsMetal can be ignored due to metal resistor is very small.第19頁/共25頁6. Bipolar Device第20頁/共25頁STISTISTISTIN+P+P+N WellM1PadPadPadPsubBECWAT Item Name(以NPN為例): HfeNpn BvNpnItem nameMethod of measurementHfeIb=1uA, Vce=Vd