硅片英語詞匯

1、acceptor - an element, such as boron, indium, and gallium used to create a free hole in a semiconductor. the acceptor atoms are required to have one less valence electron than the semiconductor.受主一種用來在半導(dǎo)體中形成空穴的元索，比如硼、鋼和鐐。受主原子必須比半導(dǎo)體元 素少一價電子alignment precision - displacement of patterns that occurs du

2、ring the photolithography process 套準(zhǔn)精度在光刻工藝屮轉(zhuǎn)移圖形的精度。anisotropic - a process of etching that has very little or no undercutting各向異性在蝕刻過程中，只做少量或不做側(cè)向凹刻。area contamination - any foreign particles or material that are found on the surface of a wafer. this is viewed as discolored or smudged, and it is the

3、 result of stains, fingerprints, water spots, etc. 沾污區(qū)域任何在晶圓片表面的外來粒了或物質(zhì)。由沾污、手卬和水滴產(chǎn)生的污染。azimuth, in ellipsometry - the angle measured between the plane of incidence and the major axis of the ellipse 橢圓方位角-測量入射面和主晶軸之間的角度。backside - the bottom surface of a silicon wafer. (note: this term is not preferr

4、ed; instead, use 'back surface9.)背面晶圓片的底部表面。(注：不推薦該術(shù)語，建議使用“背部表面")base silicon layer - the silicon wafer that is located underneath the insulator layer, which supports the silicon film on top of the wafer.底部硅層在絕緣層下部的晶圓片，是頂部硅層的基礎(chǔ)。bipolar - transistors that are able to use both holes and elect

5、rons as charge carriers. 雙極晶體管能夠采用空穴和電子傳導(dǎo)電荷的品體管。bonded wafers - two silicon wafers that have been bonded together by silicon dioxide, which acts as an insulating layer.綁定晶圓片兩個晶圓片通過二氧化硅層結(jié)合到一起，作為絕緣層。bonding interface the area where the bonding of two wafers occurs. 綁定面兩個晶圓片結(jié)合的接觸區(qū)。buried layer - a path

6、 of low resistance for a current moving in a device many of these dopants are antimony and arsenic.埠層為了電路電流流動而形成的低電阻路徑，攙雜劑是銳和砂。buried oxide layer (box) - the layer that insulates between the two wafers. 氧化埋層(box) 在兩個晶圓片間的絕緣層。carrier - valence holes and conduction electrons that are capable of carryi

7、ng a charge through a solid surface in a silicon wafer.載流子晶圓片屮用來傳導(dǎo)電流的空穴或電子。chemical-mechanical polish (cmp) - a process of flattening and polishing wafers that utilizes both chemical removal and mechanical buffing. it is used during the fabrication process. 化學(xué)機械拋光(cmp) 平整和拋光晶圓片的工藝，采用化學(xué)移除和機械拋光兩種方式。此

8、工藝在前道工藝屮使用。chuck mark a mark found on either surface of a wafer, caused by either a robotic end effector, a chuck, or a wand 卡盤痕跡在晶圓片任意表面發(fā)現(xiàn)的由機械手、卡盤或托盤造成的痕跡。cleavage plane - a fracture plane that is preferred解理面-破裂面crack - a mark found on a wafer that is greater than 0.25 mm in length.裂紋長度大于0.25毫米的晶圓

9、片表面微痕。crater - visible under diffused illumination, a surface imperfection on a wafer that can be distinguished individually 微坑在擴散照明下可見的，晶圓片表面可區(qū)分的缺陷。conductivity (electrical) - a measurement of how easily charge carriers can flow throughout a material.傳導(dǎo)性(電學(xué)方面)一種關(guān)于載流子通過物質(zhì)難易度的測量指標(biāo)oconductivity type -

10、 the type of charge carriers in a wafer, such as “ntype” and “p-type". 導(dǎo)電類型晶圓片中載流子的類型，n型和p型。contaminant, particulate (see light point defect)污染微粒(參見光點缺陷)contamination area an area that contains particles that can negatively affect the characteristics of a silicon wafer.沾污區(qū)域部分晶圓片區(qū)域被顆粒沾污，造成不利特性影響

11、。contamination particulate - particles found on the surface of a silicon wafer.沾污顆粒晶圓片表面上的顆粒。crystal defect - parts of the crystal that contain vacancies and dislocations that can have an impact on a circuit electrical performance.晶體缺陷部分品體包含的、會影響電路性能的空隙和層錯。crystal indices (see miller indices)晶體指數(shù)(參見

12、米勒指數(shù))depletion layer - a region on a wafer that contains an electrical field that sweeps out charge carriers.耗盡層晶圓片上的電場區(qū)域，此區(qū)域排除載流子。dimple - a concave depression found on the surface of a wafer that is visible to the eye under the correct lighting conditions.表面起伏在合適的光線下通過肉眼可以發(fā)現(xiàn)的晶圓片表面凹陷。donor a contam

13、inate that has donated extra “free，electrons, thus making a wafer “ntype= 施主可提供“口出'電子的攙雜物，使晶圓片呈現(xiàn)為n型。dopant - an element that contributes an electron or a hole to the conduction process, thus altering the conductivity. dopants for silicon wafers are found in groups iii and v of the periodic table

14、 of the elements.攙雜劑可以為傳導(dǎo)過程提供電子或空穴的元索，此元索可以改變傳導(dǎo)特性。晶圓片攙雜 劑可以在元素周期表的iii和v族元素中發(fā)現(xiàn)。doping the process of the donation of an electron or hole to the conduction process by a dopant. 摻雜把攙雜劑摻入半導(dǎo)體，通常通過擴散或離子注入工藝實現(xiàn)。edge chip and indent - an edge imperfection that is greater than 0.25 mm.芯片邊緣和縮進(jìn)晶片屮不完整的邊緣部分超過0.25

15、毫米。edge exclusion area - the area located between the fixed quality area and the periphery of a wafer. (this varies according to the dimensions of the wafer.)邊緣排除區(qū)域位于質(zhì)量保證區(qū)和品圓片外圍之間的區(qū)域。(根據(jù)晶圓片的尺寸不同而有 所不同。)edge exclusion, nominal (ee) - the distance between the fixed quality area and the periphery of a

16、wafer.名義上邊緣排除(ee)質(zhì)量保證區(qū)和晶圓片外圍之間的距離。edge profile - the edges of two bonded wafers that have been shaped either chemically or mechanically.邊緣輪廓通過化學(xué)或機械方法連接起來的兩個品圓片邊緣。etch a process of chemical reactions or physical removal to rid the wafer of excess materials. 蝕刻通過化學(xué)反應(yīng)或物理方法去除晶圓片的多余物質(zhì)。fixed quality area

17、(fqa) - the area that is most central on a wafer surface.質(zhì)量保證區(qū)(fqa)晶圓片表面中央的人部分。flat - a section of the perimeter of a wafer that has been removed for wafer orientation purposes. 平邊晶圓片圓周上的一個小平面，作為晶向定位的依據(jù)。flat diameter - the measurement from the center of the flat through the center of the wafer to th

18、e opposite edge of the wafer. (perpendicular to the flat) 平口直徑由小平面的中心通過晶圓片中心到對面邊緣的直線距離。four-point probe test equipment used to test resistivity of wafers.四探針測量半導(dǎo)體晶片表面電阻的設(shè)備。furnace and thermal processes - equipment with a temperature gauge used for processing wafers.a constant temperature is required

19、 for the process.爐管和熱處理溫度測量的工藝設(shè)備，具有恒定的處理溫度。front side - the top side of a silicon wafer(this term is not preferred; use front surface instead.) 正面晶圓片的頂部表面(此術(shù)語不推薦，建議使用“前部表面")。goniometer - an instrument used in measuring angles-角度計用來測屋角度的設(shè)備。gradient, resistivity (not preferred; see resistivity va

20、riation)電阻梯度(不推薦使用，參見“電阻變化")groove - a scratch that was not completely polished out.凹槽沒有被完全清除的擦傷。hand scribe mark - a marking that is hand scratched onto the back surface of a wafer for identification purposes- 手工印記為區(qū)分不同的晶圓片而手工在背面做出的標(biāo)記。haze - a mass concentration of surface imperfections, often

21、 giving a hazy appearance to the wafer. 霧度晶圓片表面大量的缺陷，常常表現(xiàn)為晶圓片表面呈霧狀。hole similar to a positive charge, this is caused by the absence of a valence electron.空穴和正電荷類似，是由缺少價電子引起的。ingot - a cylindrical solid made of polycrystalline or single crystal silicon from which wafers are cut.晶錠由多晶或單晶形成的圓柱體，晶圓片由此切割

22、而成。laser light-scattering event - a signal pulse that locates surface imperfections on a wafer. 激光散射由品圓片表面缺陷引起的脈沖信號。lay - the main direction of surface texture on a wafer. 層晶圓片表面結(jié)構(gòu)的主要方向。light point defect (lpd) (not preferred; see localized light-scatterer)光點缺陷(lpd)(不推薦使用，參見“局部光散射tlithography - the

23、process used to transfer patterns onto wafers. 光刻從掩膜到圓片轉(zhuǎn)移的過程。localized light-scatterer - one feature on the surface of a wafer, such as a pit or a scratch that scatters light. it is also called a light point defect.局部光散射晶圓片表面特征，例如小坑或擦傷導(dǎo)致光線散射，也稱為光點缺陷。lot - wafers of similar sizes and characteristics

24、placed together in a shipment.批次具有相似尺寸和特性的品圓片一并放置在一個載片器內(nèi)。majority carrier - a carrier, either a hole or an electron that is dominant in a specific region, such as electrons in an n-type area.多數(shù)載流子一種載流子，在半導(dǎo)體材料屮起支配作用的空穴或電子，例如在n型屮是屯 子。mechanical test wafer - a silicon wafer used for testing purposes.機械

25、測試晶圓片用于測試的晶圓片。microroughness - surface roughness with spacing between the impurities with a measurement of less than 100 pm.微粗糙小于100微米的表面粗糙部分。miller indices, of a crystallographic plane - a system that utilizes three numbers to identify plan orientation in a crystal.miller索指數(shù)三個整數(shù)，用于確定某個并行面。這些整數(shù)是來自相同

26、系統(tǒng)的基本向量。minimal conditions or dimensions - the allowable conditions for determining whether or not a wafer is considered acceptable.最小條件或方向確定晶圓片是否合格的允許條件。minority carrier - a carrier, either a hole or an electron that is not dominant in a specific region, such as electrons in a p-type area.少數(shù)載流了 在半導(dǎo)

27、體材料中不起支配作用的移動電荷，在p型中是電了，在n型中是空 穴。mound - a raised defect on the surface of a wafer measuring more than 0.25 mm. 堆垛晶圓片表面超過0.25毫米的缺陷。notch - an indent on the edge of a wafer used for orientation purposes 凹槽晶圓片邊緣上用于晶向定位的小凹槽。orange peel - a roughened surface that is visible to the unaided eye. 桔皮可以用肉眼看到

28、的粗糙表面orthogonal misorientation -直角定向誤差particle - a small piece of material found on a wafer that is not connected with it. 顆粒晶圓片上的細(xì)小物質(zhì)。particle counting - wafers that are used to test tools for particle contamination. 顆粒計算用來測試晶圓片顆粒污染的測試工具。particulate contamination - particles found on the surface of

29、 a wafer. they appear as bright points when a collineated light is shined on the wafer.顆粒污染品圓片表面的顆粒。pit - a non-removable imperfection found on the surface of a wafer.深坑-一種晶圓片表面無法消除的缺陷。point defect - a crystal defect that is an impurity, such as a lattice vacancy or an interstitial atom. 點缺陷-不純凈的晶缺陷

30、，例如格子空缺或原子空隙。preferential etch -優(yōu)先蝕刻premium wafer - a wafer that can be used for particle counting, measuring pattern resolution in the photolithography process, and metal contamination monitoring. this wafer has very strict specifications for a specific usage, but looser specifications than the pri

31、me wafer.測試晶圓片影印過程中用于顆粒計算、測量溶解度和檢測金屬污染的晶圓片。對于具體 應(yīng)用該晶圓片有嚴(yán)格的耍求，但是要比主晶圓片要求寬松些。primary orientation flat the longest flat found on the wafer.主定位邊晶圓片上最長的定位邊。process test wafer a wafer that can be used for processes as well as area cleanliness.加工測試晶圓片用于區(qū)域清潔過程中的晶圓片。profilometer - a tool that is used for mea

32、suring surface topography.表面形貌劑一種用來測屋晶圓片表面形貌的工具。resistivity (electrical) - the amount of difficulty that charged carriers have in moving throughout material.電阻率(電學(xué)方面)材料反抗或?qū)闺姾稍谄渲型ㄟ^的一種物理特性。required the minimum specifications needed by the customer when ordering wafers. 必需訂購晶圓片時客戶必須達(dá)到的最小規(guī)格。roughness -

33、 the texture found on the surface of the wafer that is spaced very closely together. 粗糙度晶圓片表面間隙很小的紋理。saw marks - surface irregularities鋸痕表面不規(guī)則。scan direction in the flatness calculation, the direction of the subsites.掃描方向平整度測量中，局部平面的方向。scanner site flatness -局部平整度掃描儀-scratch - a mark that is found o

34、n the wafer surface擦傷晶圓片表面的痕跡。secondary flat - a flat that is smaller than the primary orientation flat. the position of this flat determines what type the wafer is, and also the orientation of the wafer.第二定位邊比主定位邊小的定位邊，它的位置決定了晶圓片的類型和晶向。shape -形狀-site - an area on the front surface of the wafer that

35、 has sides parallel and perpendicular to the primary orientation flat. (this area is rectangular in shape) 局部表面品圓片前面上平行或垂直于主定位邊方向的區(qū)域。site array - a neighboring set of sites 局部表面系列一系列的相關(guān)局部表面。site flatness -局部平整slip - a defect pattern of small ridges found on the surface of the wafer.劃傷晶圓片表面上的小皺造成的缺陷。smudge - a defect or contamination found on the wafer caused by fingerprints. 污跡晶圓片上指紋造成的缺陷或污染。sori-striation - defects or contaminations found in the shape of a helix 條痕螺紋上的缺陷或污染。subsite, of a site - an area found within the site, also rectangular. the