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1、同同步步動(dòng)動(dòng)態(tài)態(tài)隨隨機(jī)機(jī)存存取取內(nèi)內(nèi)存存SynchronousDRAMisdesignedtoprocessdataatthesameclockspeedastheCPU.Therefore,synchronousDRAMisregardedasthecorecomponentthatisusedinhighspeedprocessingoflargevolumesofdata.Currently,itsusageisexpandingtovariousconsumerelectronicssuchasDTV,DSC,HDDandSTB.16Mb SDRAMPart No.Organizati

2、onSpeed GradeVoltagePackageStatus*W9816G6IB1Mx162Banks-6166MHzCL33.3V0.3VPackagedinVFBGA60ballspitch=0.65mm,usingLeadfreematerialswithRoHScompliantP-7143MHz2.7V3.6VW9816G6IH1Mx162Banks-5143MHzCL23.3V0.3VPackagein50-pin,400milTSOPII,usingLeadfreematerialswithRoHScompliantP200MHzCL3-6/-6I/-6A166MHz3.3

3、V0.3V-7/-7I143MHz2.7V3.6V*Status:P=MassProduction,S=Samples,UD=UnderDevelopment,UD(Time)=UnderDevelopment(ReadyTime),EOL=Endoflife.64Mb SDRAMPart No.OrganizationSpeed GradeVoltagePackageStatus*W9864G2GH2Mx324Banks-5200MHzCL33.3V0.3VPackagedinTSOPII86-pin(400mil)usingPbfreewithRoHScompliantN-6/-6I166

4、MHz-7143MHz2.7V3.6VW9864G2IB2Mx324Banks-6166MHzCL33.3V0.3VPackagedinTFBGA90ball(8x13mm),usingLeadfreematerialswithRoHScompliantP-7143MHz2.7V3.6VW9864G2IH2Mx324Banks-5200MHzCL33.3V0.3VPackagedinTSOPII86-pin,usingLeadfreematerialswithRoHScompliantP-6/-6I/-6A166MHz-7143MHz2.7V3.6VW9864G6IH4Mx164Banks-5

5、200MHzCL33.3V0.3VPackagedinTSOPII54-pin,400milusingLeadfreematerialswithRoHScompliantP-6/-6I/-6A166MHz-7/-7S143MHz2.7V3.6VW9864G6JH4Mx164Banks-5200MHzCL33.3V0.3VPackagedinTSOPII54-pin,400milusingLeadfreematerialswithRoHScompliantP-6/-6I166MHz-7/-7S143MHz2.7V3.6V*Status:P=MassProduction,S=Samples,UD=

6、UnderDevelopment,UD(Time)=UnderDevelopment(ReadyTime),EOL=Endoflife,N=Nonefornewdesign.128Mb SDRAMPart No.OrganizationSpeed GradeVoltagePackageStatus*W9812G2IH4Mx324Banks-6C166MHzCL33.3V0.3VPackagedinTSOPII86-pin,usingLeadfreematerialswithRoHScompliantP-6/-6I/-6A2.7V3.6V-75133MHzW9812G2IB4Mx324Banks

7、-6/-6I/-6A166MHzCL32.7V3.6VPackagedinTFBGA90Ball(8x13mm),usingLeadfreematerialswithRoHScompliantP-75133MHzW9812G6IH8Mx164Banks-5200MHzCL33.3V0.3VTSOPII54-pin,400milusingLeadfreematerialswithRoHScompliantP-6/-6C/-6I/-6A166MHz-75133MHzW9812G6JH8Mx164Banks-5200MHzCL33.3V0.3VTSOPII54-pin,400milusingLead

8、freewithRoHScompliantP-6/-6I166MHz-75133MHz*Status:P=MassProduction,S=Samples,UD=UnderDevelopment,UD(Time)=UnderDevelopment(ReadyTime),EOL=Endoflife.256Mb SDRAMPart No.OrganizationSpeed GradeVoltagePackageStatus*W9825G2DB8Mx324Banks-6166MHzCL33.3V0.3VTFBGA90ballusingPbfreewithRoHScompliantP-6I2.7V3.

9、6V-75/75I133MHzW9825G6EH16Mx164Banks-5200MHzCL33.3V0.3VPackagedinTSOPII54-pin,400mil-0.80,usingLeadfreematerialswithRoHScompliantP-6/-6I/-6A166MHz-6133MHzCL2-75/75I/75ACL3W9825G6JH16Mx164Banks-5200MHzCL33.3V0.3VPackagedinTSOPII54-pin,400mil-0.80,usingLeadfreematerialswithRoHScompliantP-6/-6I166MHz-6

10、133MHzCL2-75CL3*Status:P=MassProduction,S=Samples,UD=UnderDevelopment,UD(Time)=UnderDevelopment(ReadyTime),EOL=Endoflife.Contact us: SDRAMRoHSYYRoHSYYY同同步步動(dòng)動(dòng)態(tài)態(tài)隨隨機(jī)機(jī)存存取取內(nèi)內(nèi)存存SynchronousDRAMisdesignedtoprocessdataatthesameclockspeedastheCPU.Therefore,synchronousDRAMisregardedasthecorecomponentthatisused

11、inhighspeedprocessingoflargevolumesofdata.Currently,itsusageisexpandingtovariousconsumerelectronicssuchasDTV,DSC,HDDandSTB.16Mb SDRAM*Status:P=MassProduction,S=Samples,UD=UnderDevelopment,UD(Time)=UnderDevelopment(ReadyTime),EOL=Endoflife.64Mb SDRAMYYRoHSYYYYRoHS*Status:P=MassProduction,S=Samples,UD=UnderDevelopment,UD(Time)=UnderDevelopment(ReadyTime),EOL=Endoflife,N=Nonefornewdesign.128Mb SDRAM*Status:P=MassProduction,S=Samples,UD=UnderDevelopment,UD(Tim

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