大功率密度封裝用粉末冶金材料

1、Ref. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&M Thermal Management

2、電路設(shè)計(jì)電路設(shè)計(jì) 封裝材料選擇（封裝材料選擇（Heatsink) 生產(chǎn)工藝選擇生產(chǎn)工藝選擇 封裝結(jié)構(gòu)設(shè)計(jì)封裝結(jié)構(gòu)設(shè)計(jì)Ref. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&MRe

3、f. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&M材材 料料成成 分分密密 度度（g/cm3）熱膨脹系數(shù)熱膨脹系數(shù)（10-6/K）熱導(dǎo)率熱導(dǎo)率（W/mK）AlSiCAl+(50%-70%)SiC3.006.5-9.0170-200CuWW+(10%-20%)Cu15.6-17.06.5-8.3180-200CuMoMo+(15%-20%)Cu10.007.0-8.0160-170AlSi60%Al+40%Si2.5315.4126KovarFe+Ni8.105.917Cu8.9617.83

4、98Al2.7023.6238Si2.304.2151GaAs5.236.554Al2O33.606.717BeO2.907.6250AlN98%purity3.304.5160-200Ref. Mat. & Ceramics Branch AT&M二、熱沉材料的制備工藝二、熱沉材料的制備工藝傳統(tǒng)傳統(tǒng)AlAl2 2O O3 3陶瓷基片生產(chǎn)工藝陶瓷基片生產(chǎn)工藝Ref. Mat. & Ceramics Branch AT&M原料粉末混合原料粉末混合壓坯成型壓坯成型燒結(jié)燒結(jié)圓盤研磨圓盤研磨CNC加工加工行星研磨行星研磨電鍍電鍍Ni、Au高熱導(dǎo)高熱導(dǎo)WCuWCu、MoC

5、uMoCu、AlNAlN生產(chǎn)工藝生產(chǎn)工藝Ref. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&M優(yōu)點(diǎn)：工藝流程相對(duì)簡(jiǎn)單。優(yōu)點(diǎn)：工藝流程相對(duì)簡(jiǎn)單。缺點(diǎn)：高能球磨帶入雜質(zhì)缺點(diǎn)：高能球磨帶入雜質(zhì)對(duì)導(dǎo)熱率影響。對(duì)導(dǎo)熱率影響。Ref. Mat. & Ceramics Branch AT&MWO3CuO 混合高能球磨還原WO3+CuOWO3+Cu （300C）WO3+CuWO2.9+Cu （380 C）WO2

6、.9+CuWO2.9+WO2.72Cu （500C）WO2.9+WO2.72CuWO2+Cu （600C）WO2+CuWO2+WCu （650C）WO2+WCuW+Cu （over 700C）Ref. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&M國內(nèi)目前主要采用的工藝，國內(nèi)目前主要采用的工藝，由于各工序?qū)ψ罱K由于各工序?qū)ψ罱KCuCu

7、含量均含量均有影響，對(duì)精確控制有影響，對(duì)精確控制W/CuW/Cu合合金的成分，即精確控制熱導(dǎo)金的成分，即精確控制熱導(dǎo)率上有一定困難。率上有一定困難。Ref. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics B

8、ranch AT&MPROPERTIES DATA Series7001200Densityg/cc3.022.77Thermal Conductivity W/m K210170Thermal Expansion PPM /C6.0 - 8.016.0 18.0Electrical Conductivity%IACS725 27Youngs ModulusGpa224100Thermal CapacityJ/cc C2.222.05Ref. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&am

9、p;MRef. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&M熱膨脹系熱膨脹系數(shù)數(shù)6.56.59.59.51010-6-6/K/K之間任意可調(diào)之間任意可調(diào)導(dǎo)熱率導(dǎo)熱率 170170200 W/mK200 W/mK電阻率電阻率 30305050cmcm抗彎強(qiáng)度抗彎強(qiáng)度 350350500 MPa500 MPa彈性模量彈性模量 200200230 GPa230 GPa密度密度 2.952.953.00 g/cm3.00 g/cm3 3尺寸范圍尺寸范圍 3 33 30.5 mm0.5 mm3 31

10、00100606010 mm10 mm3 3尺寸精度尺寸精度 0.05mm0.05mm表面粗糙表面粗糙度度 1.61.63.2m3.2m鍍層厚度鍍層厚度 3 310m10m鍍層質(zhì)量鍍層質(zhì)量 400400空氣烤空氣烤15min15min，鍍層無起泡、起，鍍層無起泡、起 皮或變色現(xiàn)象皮或變色現(xiàn)象Ref. Mat. & Ceramics Branch AT&M超高熱導(dǎo)熱沉材料 CVD金剛石薄膜Ref. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&M 熱絲熱絲CVDCVD制備金剛石薄

11、膜的基本原理是將制備金剛石薄膜的基本原理是將含碳?xì)庠矗ㄈ缂淄椋┖蜌錃庠跓艚z產(chǎn)生含碳?xì)庠矗ㄈ缂淄椋┖蜌錃庠跓艚z產(chǎn)生的高溫（的高溫（20002000C C以上）作用下分解離化以上）作用下分解離化后產(chǎn)生含碳基團(tuán)和原子氫等，他們的相后產(chǎn)生含碳基團(tuán)和原子氫等，他們的相互作用促使構(gòu)成金剛石的互作用促使構(gòu)成金剛石的SP3SP3雜化碳碳雜化碳碳鍵的形成，從而在基體（溫度鍵的形成，從而在基體（溫度600-600-10001000C C）表面沉積金剛石薄膜。）表面沉積金剛石薄膜。Ref. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&MRef. Mat. & C