ZnS薄膜的制備

1、Reporter:Li JianminYan Zhiping, Liu Jiwan, Hui Liwei, Xie Yuntao,Wang Mengjiao, Li Jianmin, Bao Shouxin, Shi Xiaohui, Huang Yimin, Chen Jian,Wang Bei, Yao DongbaoPreparation of ZnS thin films 材料合成化學(xué)-12組USTCOutlineIntroduction of ZnS thin films in solar cellsMethods for preparation of ZnS TFSConlusio

2、ns & Wishes材料合成化學(xué)-12組USTCIntroduction-1-Nakada et al. IEEE transactions on electron devices,VOL.46, NO.10,1999:2093-2097Typical structure of CIGS solar cell材料合成化學(xué)-12組USTCIntroduction-2wide band gap (3.65 ev)high refractive index(2.35)high dielectric constant.CVDSOL-GELRF-sputteringCBD.ZnSthin fi

3、lms材料合成化學(xué)-12組USTCMethods-RF sputtering-Hwang et al. Nanoscale Research Letters,2012. 7.26Sketch of RF sputtering chamber and principle材料合成化學(xué)-12組USTCResults-RF Sputtering材料合成化學(xué)-12組USTCMethods-CVD -FU Ligang,et.al, Rare Metals,Vol. 30, No. 4, 2011:387.Sketch of CVD chamber and principle1) Raw material

4、: high-purity zinc(99.999%) high-purityH2S(99.99%)2) Chemical formulation: H2S(g) +Zn(g) = ZnS(s) + H2(g) G=82.1T - 5.9TlnT - 0.62 10-3T2 - 319799 J/mol3) Treaction temperature(873-1003K) reaction pressure5-10MPa mole ratio of Zn(g)/H2S(g)0.8-1.4 deposition rate 30-120m/h材料合成化學(xué)-12組USTCResults-CVD材料合

5、成化學(xué)-12組USTCMethods-Sol-Gel-Abdullah Goktas et.al,J Mater Sci: Mater Electron (2012) 23:13611366Dip-coatingDry Annealingthin films0.01 mol Zn(OOCCH3)20.03 mol methanol 0.03 mol CH4N2S0.09 mol methanolrepeat材料合成化學(xué)-12組USTCResults-Sol-Gel材料合成化學(xué)-12組USTCMethods-CBD-Seung Wook Shin et.al,Solar Energy , (20

6、11)85 :29032911Experimental parameterVtotal=200ml; 40 ml of 0.2 M Zn(CH3COO)22H2O; 40 ml of 0.055 M Na2EDTA ; 80 ml of 0.4 M C2H5NS (TAA); The pH of the solution was adjusted at 4 by adding HCl. S2-complexing agentsGlassZn2+材料合成化學(xué)-12組USTCResults-CBD材料合成化學(xué)-12組USTCConclusions材料合成化學(xué)-12組USTCConclusions1The same kind of material can have different preparation methods2Different preparation methods suitable for different performance requirements of