MOS集成電路工藝入門

1、IC常用術(shù)語園片：硅片芯片(Chip, Die)：6、8 ：硅（園）片直徑：1 25.4mm6150mm; 8200mm; 12300mm; 亞微米1m的設(shè)計規(guī)范深亞微米 0反型層 溝道源（Source）S漏（Drain）D柵（Gate）G柵氧化層厚度：50埃1000埃（5nm100nm）VT閾值電壓電壓控制N N溝溝MOSMOS（NMOSNMOS） P型襯底，受主雜質(zhì)； 柵上加正電壓，表面吸引電子，反型，電子通道； 漏加正電壓，電子從源區(qū)經(jīng)N溝道到達(dá)漏區(qū)，器件開通。N襯底p+p+漏源柵柵氧化層場氧化層溝道P P溝溝MOSMOS（PMOSPMOS）GDSVTVGSID+-VDS 0 N型襯底，

2、施主雜質(zhì)，電子導(dǎo)電； 柵上加負(fù)電壓，表面吸引空穴，反型，空穴通道； 漏加負(fù)電壓，空穴從源區(qū)經(jīng)P溝道到達(dá)漏區(qū)，器件開通。CMOS CMOS：Complementary Symmetry Metal Oxide Semiconductor 互補(bǔ)對稱金屬氧化物半導(dǎo)體特點：低功耗VSSVDDVoViCMOS倒相器PMOSNMOSI/OI/OVDDVSSCCCMOS傳輸門N-SiP+P+n+n+P-阱DDVoVGVSSSSVDDCMOS倒相器截面圖CMOS倒相器版圖pwellactivepolyN+ implantP+ implantomicontactmetalA NMOS ExamplepwellP

3、wellActivePolyN+ implantP+ implantOmicontactMetalNtype SiSiO2光刻膠光刻膠光光MASK PwellNtype SiSiO2光刻膠光刻膠光刻膠光刻膠MASK PwellNtype SiSiO2光刻膠光刻膠光刻膠光刻膠SiO2Ntype SiSiO2SiO2PwellpwellactivePwellActivePolyN+ implantP+ implantOmicontactMetalNtype SiSiO2PwellSiO2光刻膠光刻膠MASK activeMASK ActiveSi3N4Ntype SiSiO2PwellSiO2光刻

4、膠光刻膠光刻膠光刻膠MASK activeMASK ActiveSi3N4Ntype SiSiO2PwellSiO2光刻膠光刻膠光刻膠光刻膠Si3N4Ntype SiSiO2PwellSiO2場氧場氧場氧場氧場氧場氧PwellSi3N4Ntype SiSiO2Pwell場氧場氧場氧場氧場氧場氧PwellNtype SiSiO2PwellSiO2場氧場氧場氧場氧場氧場氧PwellpolyactivepwellpolyPwellActivePolyN+ implantP+ implantOmicontactMetalNtype SiSiO2PwellSiO2MASK poly場氧場氧場氧場氧場氧場

5、氧Pwellpoly光刻膠光刻膠Ntype SiSiO2PwellSiO2MASK poly場氧場氧場氧場氧場氧場氧Pwell光刻膠光刻膠polyNtype SiSiO2PwellSiO2場氧場氧場氧場氧場氧場氧PwellpolyNtype SiSiO2PwellSiO2場氧場氧場氧場氧場氧場氧PwellpolyactivepwellpolyN+ implantPwellActivePolyN+ implantP+ implantOmicontactMetalNtype SiSiO2PwellSiO2MASK N+場氧場氧場氧場氧場氧場氧Pwellpoly光刻膠光刻膠Ntype SiSiO2PwellSiO2場氧場氧場氧場氧場氧場氧Pwell光刻膠光刻膠polyN+ implantS/DactivepwellpolyP+ implantPwellActivePolyN+ implantP