微納加工技術發(fā)展概述詳解

第一章微納加工技術發(fā)展概述ppt課件當前1頁，總共56頁。主要內容本課程的主要內容集成電路的發(fā)展MEMS技術簡介1.4蘇州納米區(qū)簡介2當前2頁，總共56頁。3當前3頁，總共56頁。1.1課程的主要內容第一章微納加工技術發(fā)展概述第二章CMOS工藝流程第三章潔凈室、晶圓片清洗與吸雜處理第四章光刻第五章薄膜淀積第六章刻蝕第七章熱氧化和Si-SiO2界面第八章離子注入第九章擴散（已學）第十章后端工藝第十一章未來趨勢與挑戰(zhàn)4當前4頁，總共56頁。教材5作者：唐天同，王兆宏西安交通大學電子工業(yè)出版社，2010當前5頁，總共56頁。教材6(美)JamesD.Plummer,MichaelD.Deal,PeterB.Griffin著,

2005，電子工業(yè)出版社當前6頁，總共56頁。分數(shù)比例作業(yè)15%考勤15%實驗20%考試50%7當前7頁，總共56頁。1.2

集成電路工藝的發(fā)展1.2.2促成集成電路產(chǎn)生的幾項關鍵發(fā)明1.2.3半導體器件

集成電路工藝的發(fā)展歷程8當前8頁，總共56頁。?

1959

and

1990integratedcircuits.?Progressdueto:

-Feature

size(特征尺寸)

reduction13%

years(Moore’s

Law).

-

Increasing

chipsize(芯片尺寸)≈16%

per

year.

集成電路工藝的發(fā)展歷程Evolution

ofIntegratedCircuits

Fabrication9特征尺寸：工藝制造中晶圓片表面能刻印出圖形的最小尺寸。當前9頁，總共56頁。OnApril19,1965

Electronics

Magazine

published

a

paperbyGordon

Mooreinwhichhe

madeapredictionaboutthesemiconductor

industry

that

has

become

thestuff

oflegend.“Thenumberoftransistorsincorporatedinachipwillapproximatelydoubleevery24months.”Known

asMoore'sLaw,

his

predictionhas

enabledwidespread

proliferation

oftechnology

worldwide,

and

todayhasbecome

shorthandfor

rapidtechnological

change.

Moore’s

Law1010億當前10頁，總共56頁。GordonMoore：Intel創(chuàng)始人/pressroom/kits/events/moores_law_40th/index.htm?iid=tech_mooreslaw+body_presskit11當前11頁，總共56頁。?

The

era

of

“easy”

scaling

is

over.

We

are

now

in

a

period

where

technology

and

device

innovations

are

required.

Beyond

2020,

new

currently

unknown

inventions

will

be

required.IC最小特征尺寸的發(fā)展歷史及規(guī)劃Device

Scaling

Over

Time12當前12頁，總共56頁。?

1990

IBM

demo

of

?

scale

“l(fā)ithography”.?

Technology

appears

to

be

capable

of

making

structures

much

smaller

thancurrently

known

device

limits.

ITRS

at

13ITRS硅技術發(fā)展規(guī)劃當前13頁，總共56頁。ITRS—InternationalTechnologyRoadmapforSemiconductors預言硅主導的IC技術藍圖由歐洲電子器件制造協(xié)會（EECA）、歐洲半導體工業(yè)協(xié)會（ESIA）、日本電子和信息技術工業(yè)協(xié)會（JEITA）、韓國半導體工業(yè)協(xié)會（KSIA）、臺灣半導體工業(yè)協(xié)會（TSIA）和半導體工業(yè)協(xié)會（SIA）合作完成。器件尺寸下降，芯片尺寸增加互連層數(shù)增加掩膜版數(shù)量增加工作電壓下降http://14當前14頁，總共56頁。AdvantagesandChallengesAssociatedwiththe

Introduction

of450mmWafers

:Aposition

paperreportsubmittedbytheITRS

StartingMaterials

Sub-TWG,June2005.Linewidth

vs.

Fab

Cost15當前15頁，總共56頁。1.2.2促成集成電路產(chǎn)生的幾項關鍵發(fā)明?

Invention

of

the

bipolartransistor(點接觸晶體管)-

1947,

Bell

Labs.W.ShockleyJ.BardeenW.Brattain1956年諾貝爾物理獎點接觸晶體管：基片是N型鍺，發(fā)射極和集電極是兩根金屬絲。這兩根金屬絲尖端很細，靠得很近地壓在基片上。金屬絲間的距離：~50μm16當前16頁，總共56頁。17當前17頁，總共56頁。1948年W.Shockley提出結型晶體管概念1950年第一只NPN結型晶體管18當前18頁，總共56頁。?

Grown

junction

transistortechnology

（生長結技術）of

the

1950s結型晶體管的制備19Ge當前19頁，總共56頁。?

Alloy

junction

technology（合金結技術）of

the

1950s.?

Double

diffused

transistortechnology(氣相源擴散工藝，1956福勒和賴斯)in1957，Bell

Labs.PN結裸露在外面20加熱Ge高溫爐Si腐蝕形成臺面結構當前20頁，總共56頁。211955年，IBM608，3000多個鍺晶體管，重約1090kg第一個商用晶體管計算機當前21頁，總共56頁。221958年Jack·Kilby發(fā)明的世界上第一塊基于鍺的集成電路，德州儀器相移振蕩器簡易集成電路專利號：No.31838743，批準時間當前22頁，總共56頁。?

The

planar

process

(Hoerni

-

Fairchild仙童公司,

late

1950s).?

First

“passivated(鈍化)”

junctions.平面工藝

planar

process23?

平面工藝：二氧化硅屏蔽的擴散技術光刻技術JeanHoerni當前23頁，總共56頁。?

Basiclithography

process–––Apply

photoresistPatterned

exposureRemovephotoresistregions––Etch

waferStrip

remaining

photoresist光刻

Photolithography24當前24頁，總共56頁。25Robert

Noyce與他發(fā)明的集成電路專利號：No.2981877，批準時間當前25頁，總共56頁。簡短回顧：一項基于科學的偉大發(fā)明Bardeen,Brattain,Shockley,FirstGe-basedbipolartransistorinvented1947,BellLabs.NobelprizeKilby(TI)&Noyce(Fairchild),Inventionofintegratedcircuits1959,NobelprizeAtalla,FirstSi-basedMOSFETinvented1960,BellLabs.Planartechnology,JeanHoerni,1960,

Fairchild

FirstCMOScircuitinvented1963,Fairchild“Moore’slaw”coined1965,FairchildDennard,scalingrulepresented1974,IBMFirstSitechnologyroadmappublished1994,USA26當前26頁，總共56頁?；酒骷﨎JT：模擬電路及高速驅動MOS器件：高密度、更低功耗、更大的設計靈活性

NMOS,PMOS,CMOS20世紀70年代

半導體器件PN結:27當前27頁，總共56頁。BECppn+n-p+p+n+n+BJT28當前28頁，總共56頁。GateSourceDrain襯底SubstrateMOS:金屬-氧化物-半導體NMOS29柵極：開關作用，取決于電壓大小。N+：提供電子，提高開關時間。絕緣層防止Na+、K+干擾。溝道為P型。當前29頁，總共56頁。n+n+p+p+G端為高電平時導通G端為低電平時導通30當前30頁，總共56頁。31反向器輸入：高電平，相當于1，輸出0輸入：低電平，相當于0，輸出1沒有形成回路，功耗低當前31頁，總共56頁。CMOSCMOS(ComplementaryMetalOxideSemiconductor):PMOS管和NMOS管互補共同構成的MOS集成電路。32當前32頁，總共56頁。?MetalPlanarizationrequired

for

multiplemetallayers––––––Metal

DepositionPatterningFill

DielectricPlanarizationContact

viasContactDepositionMultiple

Metal

Layers33當前33頁，總共56頁。?

ICs

are

widely

regarded

as

one

of

the

key

components

of

the

information

age.?

Basic

inventions

between

1945

and

1970

laid

the

foundation

for

today‘ssilicon

industry.?

For

more

than

40

years,

"Moore's

Law"

(a

doubling

of

chip

complexity

every2-3

years)

has

held

true.?

CMOS

has

become

the

dominant

circuit

technology

because

of

its

low

DC

poweronsumption,

high

performance

and

flexible

design

options.

Future

projectionssuggest

these

trends

will

continue

at

least

15

more

years.?

Silicon

technology

has

become

a

basic

“toolset”

for

many

areas

of

science

and

engineering.?

Computer

simulation

tools

have

been

widely

used

for

device,

circuit

and

system

design

for

many

years.

CAD

tools

are

now

being

used

for

technology

design.?

Chapter

1

also

contains

some

review

information

on

semiconductor

materials

semiconductor

devices.

These

topics

will

be

useful

in

later

chapters

of

the

text.Summary

of

Key

Ideas34當前34頁，總共56頁。Richard

Feynman,1959“There’s

Plenty

of

Room

at

the

Bottom”35

一根頭發(fā)=100微米=100000納米1.3MEMS技術簡介當前35頁，總共56頁。MEMS系統(tǒng)的定義MICRO-ELECTRO-MECHANICALSYSTEMS，集物理、化學和生物的傳感器、執(zhí)行器與信息處理和存儲為一體的微型集成系統(tǒng)。3636當前36頁，總共56頁。(Tai,

Fan

&

Muller)19701980

HNA1960EDP

Pressure

Sensor

(Honeywell)Anodic

BondingKOHSi

PressureSensor(Motorola)MEMS的歷史

Si

as

a

mechanical

material

(Petersen)SFB

TMAH

1990Thermo-pneumatic

valve

(Redwood)

SFB

Pressure

Sensor

(NovaSensor)

DRIE

!!XeF2/BrF3

2,000process

(US

Patent)

1950RGT

(Nathanson

et

al)Metal

Light

Valve

(RCA)

ADXLAccelerometerPolySi

Micromotor

IR

imager

(Honeywell)

PolySi

Comb

Drive

(Tang,

Howe)

LIGAPolySi

beams(Howe,

Muller)

BJT

TransistorMetal

sacrificialIC

Optical

MEMS

RF

MEMS

Si

Gyro

(Draper)DMD

(TI)Bio

MEMS3737當前37頁，總共56頁。1987198719871987Berkeley:

Micromotor戴聿昌

MEMS

becomes

the

name

in

U.S.Analog

Devices

begins

accelerometer

projectFirst

MEMS

Conference,

IEEE

MEMS

First

Eurosensors

conference,

EuropeThe

motors

stimulating

major

interest

in

WORLD！

1987年，MEMS的里程碑3838當前38頁，總共56頁。1994年，DRIE技術問世

1994

DRIE專利申請MEMS進入體硅加工時代

3939當前39頁，總共56頁。MEMS的產(chǎn)學研圖譜4040當前40頁，總共56頁。全球汽車MEMS傳感器的銷售額將在2012年增長16%，達到23.1億美元。41當前41頁，總共56頁。燈光調節(jié)，剎車系統(tǒng)……汽車上的MEMS加速度計一輛高端的汽車會有上百個傳感器，包括30~50個MEMS傳感器。

安全氣囊

高g值加速度計，約80%汽車

側翻保護

低g值加速度計

車輛動態(tài)控制（ESP）

低g值加速度計、陀螺儀和組合

慣性模塊用于車身電子穩(wěn)定系統(tǒng)

TPMS輪胎壓力實時監(jiān)視系統(tǒng)

發(fā)動機機油壓力傳感器

剎車系統(tǒng)空氣壓力傳感器

發(fā)動機進氣歧管壓力傳感器

柴油機共軌壓力傳感器42當前42頁，總共56頁。不同汽車種類的MEMS需求43當前43頁，總共56頁。加速度計和陀螺儀的應用分布44當前44頁，總共56頁。美新趙陽當前45頁，總共56頁。46當前46頁，總共56頁。手機和平板電腦中的運動傳感器將是未來5年內熱門技術中的熱門蘋果引爆MEMS傳感器應用熱潮

融合IMU擴大應用領域47當前47頁，總共56頁?！?/p>

智能手機中的MEMS器件智能手機中的MEMS加速