TFTLCD新技術(shù)介紹課件

TFT-LCD新技術(shù)介紹課程內(nèi)容課程目標(biāo)了解TFTLCD新技術(shù)現(xiàn)況TFT新技術(shù)CF新技術(shù)Cell新技術(shù)課程大綱1.TFT新技術(shù)介紹1.14-Mask1.2GOA1.3Highapertureratio(LowKPVX)2.CF新技術(shù)介紹2.1COA3.Cell新技術(shù)介紹3.1VerticalAlignment

(MVA,PVA,PSA)3.2HomogenousAlignment

(IPS,FFS)4.總結(jié)玻璃基板玻璃基板掃描電極金屬沉積柵電極形成絕緣層沉積有源層沉積(a-Si)歐姆接觸層沉積有源層形成信號金屬層沉積信號線形成歐姆接觸層形成鈍化層沉積接觸孔形成像素電極層沉積像素電極形成像素電極信號線鈍化層歐姆接觸層有源層?xùn)沤^緣層掃描電極接觸孔1.14mask-Array5mask工藝流程Mo/Al/MoBusLine4MaskFlow5MaskFlowGateAl/MoFormationG-SiNx&ASLayerDep.1stMo/Al/Mo(Wet)A.E./Ash.(Dry)2ndMo/Al/Mo(Wet)n+Si(Dry)SEMo/Al/MoDep.SEMaskSEEtch.(Wet)SEMaskASStripSEMo/Al/MoDepASPhotoASEtch(Dry)n+Si(Dry)1.14MaskIntroduction--.4Mask&5Mask差異ASPhoto&ASStripSavedSE2ndMo/Al/Mo(Wet)processadded5MaskTFT結(jié)構(gòu)1.14Mask-Photo工藝

1.光罩簡介灰階光罩GrayToneMask半色調(diào)光罩HalfToneMask普通光罩不透光透光不透光入射光光罩光強(qiáng)光阻玻璃基板入射光光罩光強(qiáng)光阻玻璃基板不透光不透光部分透光透光透光透光透光入射光光罩透光不透光不透光部分透光透光光強(qiáng)光阻玻璃基板SSM(SingleSlitMask):與GTM類似，只是中間的狹縫只有一條□應(yīng)用Mo/Al/Mo的他社(S,B社)是使用PostBakeSkip的PRCompanyGeneration

4MaskMetalMaskFlowPRThickPostBakeEtchantS8GOMo/Al/Mo&Cu/TiSSM1W/1D2.8?135℃H3PO4,CH3COOH,HNO3(7%)7GOMo/Al/Mo&Cu/TiSSM2W2D2.1?Skip5GOMo/Al/Mo&Cu/TiGTM2W2D

1.9???

L8GOCu/MoTiHTM2W2D1.9?SkipH2O27GOCu/MoTiHTM2W2D1.9?SkipH2O2OMoHTM1W1D2.1?SkipH3PO4,CH3COOH,HNO3(3%↓)6GOCuHTM2W2D1.9?SkipH2O2B8GOMo/Al/MoHTM2W2D2.8?130℃H3PO4,CH3COOH,HNO3(4%↓)6GOMo/Al/MoHTM2W2D2.2?130℃H3PO4,CH3COOH,HNO3(2~8%)5GOMoHTM1W1D2.1?SkipA8GOMo/Al/Mo

GTM

&HTM7GOMo/Al/Mo

GTM2W2D2.0?SkipH3PO4,CH3COOH,HNO3(2~5%)＊我司:HNO3:1.9wt%,Additive無2.競爭社4Mask工程應(yīng)用現(xiàn)況1.14Mask-Photo工藝

3.Mask技術(shù)比較_GTM/HTM/SSMConceptDesign~1.3μmSlit/BarHalfTonelayer(Transmittance35~45%)~2.25μmslitunderexposureresolutionMerit

Shortdelivery

MaskCostlowforonly1layer

WidePhotomargin

Gcess

ShortExp.Time

GoodforshortchannelDemerit

NarrowPhotoMargin

LongChannelLength

Bcess

NGforshortchannel

MaskCosthigh&Deliverylong

NarrowPhotoMargin(NotpossiblewithCanon)ACIL=4.5μmACIL=3.5μmACIL=5.5μmGrayToneMaskHalfToneMaskSingleSlitMaskFormationmethodsfor4maskTFTwiththesameIoncurrent~2.25μm~1.3μm1.4μm1.3μm1.14Mask-Photo工藝

ITEMHighBakeHardBakeSkipRemark制造ResinType使用高分子

Resin使用低分子Resin

PRManufacture進(jìn)行提煉低分子工程-

增加曝光

Speed提高劑-

Cost制造單價(jià)上升

20%-

特征ThermalStabilityPostBake可以應(yīng)用(130℃)PostBakeSkip

ChemicalResistanceVeryGoodNormalCrackbyStrongEtchant(NH03>4%)CoatingPerformanceGoodGood

MuraGoodGood

WetEtchBiasGood(VeryGood)Good

DryEtchingResistanceGoodGood

StripNormalGood

4MaskPRThickPoor(2.8?)Normal(2.2?)PR使用量Exp.EnergyPoor(52mJ)Normal(41mJ)Exp.TactTime

cf)TOKSiteTest曝光量MarginNormalVeryGood因PostBake變化的形狀MetalMoAlMoMo/Cu

CompetitionS.S(7,8G),BOE(6,8G)L(7,8G),BOE(4,5G)

PhotoParticlePostBakeFume有-PostBake污染嚴(yán)重PatternAngle(PostBake以后)高(ViaLayer很難)低ViaPRAngle<60′Exp.TactTimePoorGoodRunningCost50%高-PRThick考慮□4MaskPR比較1.14Mask-Photo工藝

1.14Mask-Photo工藝

HTM>M&SSM比較光阻8um8umMaskCD=DICD灰區(qū)厚度≒6000?？%透過率(曝光速度

:a )(曝光速度

:b)灰色調(diào)區(qū)域透過率確定灰色調(diào)區(qū)域的實(shí)驗(yàn)確定方法：1.14Mask-Photo工藝

光阻光阻透光區(qū)域透光區(qū)域透光區(qū)域部分透光區(qū)域曝光曝光曝光(160)透光區(qū)域透光區(qū)域透光區(qū)域透光區(qū)域透光區(qū)域透光區(qū)域透光區(qū)域部分透光區(qū)域透光區(qū)域透光區(qū)域透光區(qū)域部分透光區(qū)域透光區(qū)域透光區(qū)域透光區(qū)域1.14Mask-Photo工藝

灰色調(diào)區(qū)域不透光區(qū)域溝道(顯微鏡)不透光區(qū)域不透光區(qū)域不透光區(qū)域灰色調(diào)區(qū)域灰色調(diào)區(qū)域SEM(截面)清洗涂膠曝光顯影PostBake1.14Mask-Photo工藝

Slitwidth(μm)33.544.555.566.5光阻厚度(?)126908560613048103880313026302750半色調(diào)光罩設(shè)計(jì)選定：不同半色調(diào)溝道寬度對PR的影響1.14Mask-Photo工藝

半色調(diào)光罩設(shè)計(jì)選定：a|b|a(μm)4|7|44|6|44|5|44|4|4光阻厚度(?)5850572055005750a|b|a(μm)5|7|55|6|55|5|55|4|5光阻厚度(?)3600335034103660a|b|a(μm)6|7|66|6|66|5|66|4|6光阻厚度(?)2470226022202440不同Halftone寬度對PR的影響CSOT4MaskExp.EnergyChannelLengtha?a+0.5

?a+1

?a+1.5

?bmJb-c

mJb-2cmJH/T低H/T低H/T高H/T高H/T高H/T高1.14Mask-Etch工藝

兩次干刻兩次濕刻（2W2D)：SD金屬為干刻難蝕刻的金屬；例如Al和Al合金以及Cr等(BCEtypeTFT)PRDryEtch2ndWetEtchFinal2ndDryEtchH3PO4/CH3COOH/HNO3SF6/Cl2SF6/O2H3PO4/CH3COOH/HNO3SF6/O2/He第一次濕法蝕刻第一次干法蝕刻4Mask黃光后1.14Mask-Etch工藝

一次干刻一次濕刻（1W1D)：SD金屬為干刻難蝕刻的金屬；例如Mo等(BCEtypeTFT)4Mask黃光后第一次濕法蝕刻第一次干法蝕刻光阻灰化信號線金屬層干刻刻蝕完成后圖示歐姆接觸層刻蝕刻蝕完成后SEM圖示H3PO4/CH3COOH/HNO3SF6/Cl2SF6/O2SF6/O2/Cl2SF6/O2/He第一次濕法蝕刻第一次干法蝕刻ItemSpecResult1SE(Ch內(nèi))G-SiNxGSH:3500?3375GL:500?546a-SiAL:300?1775AH:1000?n+400?n+Tail-0.73Residuea-Si900?1217n+Depth800?5522SE(Ch外)ResidueGI3000?3303GILoss1000?574ActTail1.7?1.62MetalTaper-39.13SECH-Length5.0?5.3ResidueGIGILossActTailN+TailResiduea-SiN+DepthSiNxa-Si,n+MetalTaper21CH-L1233溝道short溝道斷開棋盤muraCellTest現(xiàn)象拆屏后現(xiàn)象Array基板可以看到同樣的mura解決辦法調(diào)整halftonePR厚度調(diào)整halftonePR厚度干刻設(shè)備電極PM1.14Mask-不良工藝圖片GateDriverOnArray1.2GOA

將移位寄存器集成到了TFT基板上面;未增加Array制程

關(guān)鍵技術(shù)點(diǎn):移位寄存器的設(shè)計(jì)及信賴性

優(yōu)點(diǎn):去掉了Gatefanout區(qū)域;減少了sealing區(qū)域，減少了模組的制程

成本降低:省掉了GateCOFGOA驅(qū)動(dòng)的panel有COF的panelSS13T1Cdesign1.2GOAGOA制程中可能出現(xiàn)的不良ConventionalTypeBMonArrayOrganicInsulatorApertureRatioincrease1.3Highapertureratio(LowkPVX)1.3Highapertureratio(LowkPVX)優(yōu)點(diǎn)(1)提高開口率：提高光源和電源的利用效率(2)平坦化TFT基板：提高cellgap的均勻性以及對比度(3)降低制造成本：CoatingVsPECVD材料性質(zhì)(感光材料or非感光材料)(1)低介電常數(shù)聚合物:~2.5~4VsSiNx(~7.0)(2)與金屬Al,Cr,Mo,ITO及非金屬SiNx良好的粘附性(3)透過率：>90%(4)硬度:>3H現(xiàn)有材料的供應(yīng)商Honeywell,Dongjin,JSR,AZL社(Korea)S社(Korea)notenoteMobileTV1G~3GMobile1G~4GMobileS●●

社TVMarketShareJ社,90.0%7G~8GTVDongjin,10.0%低介電常數(shù)材料在韓國LCD的適用情況1.3Highapertureratio(LowkPVX)材料反應(yīng)原理感光成分丙烯酸樹脂萘的化合物茚羧酸堿性溶液聚合物間以及聚合物與感光成分的交聯(lián)聚合物感光成分-.通過使用lowK材料可以實(shí)現(xiàn)高開口率以及平坦TFT基板的目的1.3Highapertureratio(LowkPVX)光敏性材料制程（正性材料與負(fù)性材料）1.3Highapertureratio(LowkPVX)節(jié)省2步制程現(xiàn)有PVX制程與LowK制程差異PVXDep.PRCoatingSoftBakeExposureDevelopmentEtchStripResinCoatingSoftBakeExposureDevelopmentBleachingCuring光敏材料PVX制程現(xiàn)有PVX制程1.3Highapertureratio(LowkPVX)–ArrayProcessEtchHMDStreatment1.SE制程完成3-1.黃光:樹脂材料涂布

-.材料變更:PR→樹脂2.PVX沉積-.制程節(jié)省→在黃光coating制程中完成1.3Highapertureratio(LowkPVX)高開口率接觸孔制程3-2.黃光:曝光&顯影-.制程同現(xiàn)有TFT制程1.3Highapertureratio(LowkPVX)4.DryEtch:SiNx蝕刻

-.與現(xiàn)有制程類似5.FinalTFT

-.剩余制程同現(xiàn)有制程相同顯影時(shí)間Cure溫度Cure時(shí)間Bleach強(qiáng)度

Cure溫度Cure時(shí)間Cure溫度Cure時(shí)間曝光強(qiáng)度過孔形貌透過率硬度1.3Highapertureratio(LowkPVX)附著力工藝條件摸索Temperaturea℃b℃c℃d℃TimeAdherenceASTM100%100%100%100%GB0Degree0Degree0Degree0DegreeASTMGBTarget:100%,0Degree1.3Highapertureratio(LowkPVX)曝光顯影不足的過孔形貌曝光顯影充足的過孔形貌ResinScumResin的AshingRate與PR很接近；GI的刻蝕方法與MP的GI刻蝕方法相同；為了增大曝光與顯影的ProcessMargin，在GIEtch前增加Ashing，確保過孔形成；根據(jù)最終所需的Resin厚度與Capa.可適當(dāng)增加Ashing時(shí)間。1.3Highapertureratio(LowkPVX)ViaHole穩(wěn)定形成ItemSpec.Actual硬度≥3H3H透過率>90%>93.5%(500mJ)硬度、透過率達(dá)到指標(biāo)1.3Highapertureratio(LowkPVX)60sDevelopCondition:TMAH2.43%21℃65s70sIon↑,Vth↓Ta-ShanChangetal,IEEEELECTRONDEVICELETTERS,VOL.27,NO.11,NOVEMBER20061.3Highapertureratio(LowkPVX)TFT特性比較BadViaDevelopTimeLongShort★

樹脂材料對顯影液(TMAH)較敏感,同一張Glass上ViaHoleCD在不同部位隨顯影時(shí)間不同變化較大.★此種不良可以通過降低顯影液濃度提高顯影時(shí)間,來提高同一張Glass上的顯影的均勻性來解決.1.3Highapertureratio(LowkPVX)1.3Highapertureratio(LowkPVX)Appendix-MaterialDetailpropertiesAppendix-MaterialDetailproperties2.COA-優(yōu)劣與應(yīng)用

優(yōu)點(diǎn)

:高開口率

直接與TFT像素對位ITOoverlapdatabusrule不利

:Array工藝負(fù)責(zé)

Arrayyield受影響HeavierloadingonglasstransportingReworkissue

26"31.5"40"42"46"55"HD605039373428FHD857055524840Pixel-Per-InchResolutionDisplaysize產(chǎn)品應(yīng)用對于高解析度(HighPPI)Display,像素的開口率是關(guān)鍵S社32”FHD采用COA技術(shù)可提升開口率12%ColorfilterOnArray2.COA–ProcessFlowCOAPEP3_1:

R/G/B黃光processPEP3_4:

Dry-EtchSiNxandStripperPEP3_2:

SiNxprocess

PEP3_5:ITO&ITOpatternPEP3_3:

黃光process

TFTPadCstPV1(SiNx)process280oc,1000APV2(SiNx)process200oc,1000AFab.Challenge:Array&CFFlowConnection!PEP1PEP2PEP3PEP4NormalMII4MaskPV(SiNx)process280oc,2000A2.COA-MaskFlowSS52"Mask

countTFTCF1M1BM2IN/M2OC3Pass-SiNxITO4RPS5G

6B

7Pass-SiNx

8ITO

PixeldesignIN/M2:onemaskCstmadebyM1/ITO(noCFresist)ShieldingbarbiasVcomLowcolorshiftColorresistoverlapeachother3.1VAVerticalAlignment（垂直取向）MVAbyFujitsuPVAbySECASVbySharpPSA公布時(shí)間199719982001初始LC取向Almost90°90°Almost90°Almost90°LC傾斜的控制方式楔形突起與條形ITOArray及CF基本上面均有條形ITO電極ITO電極及突起（nipple型）MonomorMulti-domainVerticalAlignmentConventionalTypeSideViewTopView*AsiaDisplay’973.1VA–Multi-domainVerticalAlignment(MVA)(1)突起處于取向?qū)拥南虏?，不需要Rubbing工藝，

突起可以自動(dòng)的將這些區(qū)域分成不同的疇(2)V=0時(shí)，液晶取向近似的垂直于玻璃基板(3)VON,液晶取向受到基板兩側(cè)的電壓重新排布并同時(shí)形成多疇問題：突起嚴(yán)重影響開口率(EarlyFujitsupanel:AR~58%)ImprovedMVA：Real-VirtualProtrusions3.1VA–Multi-domainVerticalAlignment(MVA)提升開口率。突起只在TFT側(cè)，CF側(cè)突起被ITOSlitpattern（~10um寬）取代，ITO電極邊緣的電場作為虛擬的一個(gè)突起來起作用優(yōu)點(diǎn)：更高的對比度，更高的開口率68%,制程更加簡單Cross-sectionalViewElectricFieldProtrusioninCFCommonelectrodePixelelectrodeAdvancedMVA(AMVA)AUOptronics*PicturefromTFTcentral,http://www.tftcentral.co.uk/articles/panel_technologies.htm3.1VA-AMVANormalPVA:WedgeshapePerformanceimprovementofS-PVA:Z-shapePVA:basicconcept3.1VA-PatternedVerticalAlignment(PVA)3.1VA-ASVASV：ContinuousPinwheelAlignment，連續(xù)焰火狀配向同屬于VA陣營的一員。在未加電狀態(tài)下，液晶分子跟VA模式一慣特性一樣都是分子長軸垂直于面板方向互相平行排列。如圖，CPA模式的每個(gè)像素都具有多個(gè)方形圓角的次像素電極，當(dāng)電壓加到液晶層次像素電極和另一面的電極上時(shí)，形成一個(gè)對角的電場驅(qū)使液晶向中心電極方向傾斜。各液晶分子朝著中心電極呈放射的焰火狀排列。由于像素電極上的電場是連續(xù)變化的，所以這種廣視角模式被稱作“連續(xù)焰火狀排列（CPA）”模式3.1PSA-ContinuousPinwheelAlignment)RequirementsforLC1.Can’treactwithmonomer2.Betterphaseseparation(LC&monomer)Requirementsformonomer

1.Betteralignmentability2.FastercuringspeedPolymerizationfromsurface.AllMonomermigratetoPIsubface3.2HomogenousAlignment–IPSVsFFSIPSFFSl/d>1<1or0l/w>1<1or0FieldEyEy,EzElectrodesMetalsorITOITOGlassGlassLightLightLightInPlaneSwitchGlassLCMoleculeElectricFieldPolarizerAnalyzerGlassGlassLightFringeFieldSwitchAnalyzerElectricFieldLCMoleculePolarizerPassivationlayerCommonelectrodePixelelectrodeAlignmentlayerLightyzxHitachi,K.Kondoetal.,AsiaDisplay’95Hydis,S.H.Leeetal,AsiaDisplay’98lwdFFS中的Array電極及Array制程<FFS>GlassGlassl‘GlassGlassSlit{l/w<1,l/d<1

}Box{l=0,l’≠0}<IPS>ldGlassGlassEw{l/w>1,l/d>1

}制程1stITOPass.S/DGateActive2ndITO<1+5Mask>3.2HomogenousAlignment–IPSVsFFSIPSCsBusLineGateBusLineSourceBusLineCgdTFTCsCLCCsGlassGlassCpdFFSCsBusLineGateBusLineSourceBusLineCgdTFTCsCLCCfCsGlassGlassCfCpdCtotal=Cgd+Cs+CLC(IPS)?Ctotal=Cgd+Cs+Cf+CLC(FFS)IPS：Cs↑透光區(qū)域

↓FFS:Cs位于透光區(qū)域且不影響透光區(qū)域3.2HomogenousAlignment–IPSVsFFSPXLDesign(TN,IPS,U-FFS)TNmodeIPSmode(L)U-FFSmode(H)3.2HomogenousAlignment–IPSVsFFSONStateOffState<1-D><2-D>APAYellowishColorBluishColorP*.

1-疇

:Colorshift發(fā)生：

沿LC指向矢和垂直LC指向矢的dΔn

有差異*.2-疇:Colorshift減?。?/p>

多疇LC分子自補(bǔ)償FFS方式中的LC的取向3.2HomogenousAlignment–IPSVsFFS*PicturefromTFTcentral,http://www.tftcentral.co.uk/articles/panel_technologies.htm3.2Ho