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微電子學(xué)專業(yè)詞匯電荷驅(qū)動(dòng)/交換/共享/轉(zhuǎn)移/儲(chǔ)備Chemmicaletching化學(xué)腐化法Chemically-Polish化學(xué)拋光Chemmically-MechanicallyPolish(CMP)化學(xué)機(jī)械拋光Chip芯片Chipyield芯片成品率Clamped箝位Clampingdiode箝位二極管Cleavageplane解理面Clockrate時(shí)鐘頻率Clockgenerator時(shí)鐘產(chǎn)生器Clockflip-flop時(shí)鐘觸發(fā)器Close-packedstructure密聚積構(gòu)造Close-loopgain閉環(huán)增益Collector集電極Collision碰撞CompensatedOP-AMP補(bǔ)償運(yùn)放Common-base/collector/emitterconnection共基極/集電極/發(fā)射極連接Common-gate/drain/sourceconnection共柵/漏/源連接Common-modegain共模增益Common-modeinput共模輸入Common-moderejectionratio(CMRR)共??酥票菴ompatibility兼容性Compensation補(bǔ)償Compensatedimpurities補(bǔ)償雜質(zhì)Compensatedsemiconductor補(bǔ)償半導(dǎo)體ComplementaryDarlingtoncircuit互補(bǔ)達(dá)林頓電路ComplementaryMetal-Oxide-SemiconductorField-Effect-Transistor(CMOS)互補(bǔ)金屬氧化物半導(dǎo)體場效應(yīng)晶體管Complementaryerrorfunction余誤差函數(shù)CompoundSemiconductor化合物半導(dǎo)體Conductance電導(dǎo)Conductionband(edge)導(dǎo)帶(底)Conductionlevel/state導(dǎo)帶態(tài)Conductor導(dǎo)體Conductivity電導(dǎo)率Configuration組態(tài)Conlomb庫侖ConpledConfigurationDevices構(gòu)造組態(tài)Constants物理常數(shù)Constantenergysurface等能面Constant-sourcediffusion恒定源擴(kuò)散Contact接觸Contamination治污Continuityequation連續(xù)性方程Contacthole接觸孔Contactpotential接觸電勢Continuitycondition連續(xù)性前提Contradoping反摻雜Controlled受控的Converter轉(zhuǎn)換器Conveyer傳輸器Copperinterconnectionsystem銅互連絡(luò)統(tǒng)Couping耦合Covalent共階的Crossover跨交Critical臨界的Crossunder穿交Crucible坩堝Crystaldefect/face/orientation/lattice晶體缺點(diǎn)/晶面/晶向/晶格Currentdensity電流密度Curvature曲率Cutoff截止Currentdrift/dirve/sharing電流漂移/驅(qū)動(dòng)/共享CurrentSense電流取樣Curvature曲折Customintegratedcircuit定制集成電路Cylindrical柱面的Czochralshicrystal豎立單晶Czochralskitechnique切克勞斯基技巧(Cz法直拉晶體J)Ddedicate專用的,單一的denialofservice(DOS)拒絕辦事進(jìn)擊diffusion擴(kuò)散digitalsignaturealgorithm數(shù)字簽名算法dynamic動(dòng)態(tài)的Danglingbonds吊掛鍵Darkcurrent暗電流Deadtime空載時(shí)刻Debyelength德拜長度De.broglie德布洛意Decderate減速Decibel(dB)分貝Decode譯碼Deepacceptorlevel深受主能級(jí)Deepdonorlevel深施主能級(jí)Deepimpuritylevel深度雜質(zhì)能級(jí)Deeptrap深陷阱Defeat缺點(diǎn)Degeneratesemiconductor簡并半導(dǎo)體Degeneracy簡并度Degradation退化DegreeCelsius(centigrade)/Kelvin攝氏/開氏溫度Delay延遲Density密度Densityofstates態(tài)密度Depletion耗盡Depletionapproximation耗盡近似Depletioncontact耗盡接觸Depletiondepth耗盡深度Depletioneffect耗盡效應(yīng)Depletionlayer耗盡層DepletionMOS耗盡MOSDepletionregion耗盡區(qū)Depositedfilm淀積薄膜Depositionprocess淀積工藝Designrules設(shè)計(jì)規(guī)矩Die芯片(復(fù)數(shù)dice)Diode二極管Dielectric介電的Dielectricisolation介質(zhì)隔離Difference-modeinput差模輸入Differentialamplifier差分放大年夜器Differentialcapacitance微分電容Diffusedjunction擴(kuò)散結(jié)Diffusion擴(kuò)散Diffusioncoefficient擴(kuò)散系數(shù)Diffusionconstant擴(kuò)散常數(shù)Diffusivity擴(kuò)散率Diffusioncapacitance/barrier/current/furnace擴(kuò)散電容/勢壘/電流/爐Digitalcircuit數(shù)字電路Dipoledomain偶極疇Dipolelayer偶極層Direct-coupling直截了當(dāng)耦合Direct-gapsemiconductor直截了當(dāng)帶隙半導(dǎo)體Directtransition直截了當(dāng)躍遷Discharge放電Discretecomponent分立元件Dissipation耗散Distribution分布Distributedcapacitance分布電容istributedmodel分布模型Displacement位移Dislocation位錯(cuò)Domain疇Donor施主Donorexhaustion施主耗盡Dopant摻雜劑Dopedsemiconductor摻雜半導(dǎo)體opingconcentration摻雜濃度Double-diffusiveMOS(DMOS)雙擴(kuò)散MOS.Drift漂移Driftfield漂移電場Driftmobility遷徙率Dryetching干法腐化Dry/wetoxidation干/濕法氧化Dose劑量Dutycycle工作周期Dual-in-linepackage(DIP)雙列直插式封裝Dynamics動(dòng)態(tài)Dynamiccharacteristics動(dòng)態(tài)屬性Dynamicimpedance動(dòng)態(tài)阻抗Eexpertise特長extractorEarlyeffect厄利效應(yīng)Earlyfailure早期掉效Effectivemass有效質(zhì)量Einsteinrelation(ship)愛因斯坦關(guān)系ElectricEraseProgrammableReadOnlyMemory(E2PROM)一次性電可擦除只讀儲(chǔ)備器Electrode電極Electrominggratim電遷徙Electronaffinity電子親和勢Electronic-grade電子能Electron-beamphoto-resistexposure光致抗蝕劑的電子束曝光Electrongas電子氣Electron-gradewater電子級(jí)純水Electrontrappingcenter電子俘獲中間ElectronVolt(eV)電子伏Electrostatic靜電的Element元素/元件/配件Elementalsemiconductor元素半導(dǎo)體Ellipse橢圓Ellipsoid橢球Emitter發(fā)射極Emitter-coupledlogic發(fā)射極耦合邏輯Emitter-coupledpair發(fā)射極耦合對(duì)Emitterfollower射隨器Emptyband空帶Emittercrowdingeffect發(fā)射極集邊(擁擠)效應(yīng)Endurancetest=lifetest壽命測試Energystate能態(tài)Energymomentumdiagram能量-動(dòng)量(E-K)圖Enhancementmode加強(qiáng)型模式EnhancementMOS加強(qiáng)性MOSEntefic(低)共溶的Environmentaltest情形測試Epitaxial外延的Epitaxiallayer外延層Epitaxialslice外延片Expitaxy外延Equivalentcurcuit等效電路Equilibriummajority/minoritycarriers均衡多半/少數(shù)載流子ErasableProgrammableROM(EPROM)可搽?。ň幊蹋﹥?chǔ)備器Errorfunctioncomplement余誤差函數(shù)Etch刻蝕Etchant刻蝕劑Etchingmask抗蝕劑掩模Excesscarrier余外載流子Excitationenergy激發(fā)能Excitedstate激發(fā)態(tài)Exciton激子Extrapolation外推法Extrinsic非本征的Extrinsicsemiconductor雜質(zhì)半導(dǎo)體Ffabrication捏造fleshedoutFace-centered面心立方Falltime降低時(shí)刻Fan-in扇入Fan-out扇出Fastrecovery快復(fù)原Fastsurfacestates快界面態(tài)Feedback反饋Fermilevel費(fèi)米能級(jí)Fermi-DiracDistribution費(fèi)米-狄拉克布Femipotential費(fèi)米勢Fickequation菲克方程(擴(kuò)散)Fieldeffecttransistor場效應(yīng)晶體管Fieldoxide場氧化層Filledband滿帶Film薄膜Flashmemory閃耀儲(chǔ)備器Flatband平帶Flatpack扁平封裝Flickernoise閃耀(變)噪聲Flip-floptoggle觸發(fā)器翻轉(zhuǎn)Floatinggate浮柵Fluorideetch氟化氫刻蝕Forbiddenband禁帶Forwardbias正向偏置Forwardblocking/conducting正向阻斷/導(dǎo)通Frequencydeviationnoise頻率漂移噪聲Frequencyresponse頻率響應(yīng)Function函數(shù)GgridGain增益Gallium-Arsenide(GaAs)砷化鉀Gamyrayr射線Gate門、柵、操縱極Gateoxide柵氧化層Gauss(ian)高斯Gaussiandistributionprofile高斯摻雜分布Generation-recombination產(chǎn)生-復(fù)合Geometries幾何尺寸Germanium(Ge)鍺Graded緩變的Graded(gradual)channel緩變溝道Gradedjunction緩變結(jié)Grain晶粒Gradient梯度Grownjunction進(jìn)展結(jié)Guardring愛護(hù)環(huán)Gummel-Poommodel葛謀-潘模型Gunn-effect狄氏效應(yīng)Hhandle處理hierarchical層次Hardeneddevice輻射加固器件Heatofformation形成熱Heatsink散熱器、熱沉Heavy/lightholeband重/輕空穴帶Heavysaturation重?fù)诫sHell-effect霍爾效應(yīng)Heterojunction異質(zhì)結(jié)Heterojunctionstructure異質(zhì)結(jié)構(gòu)造HeterojunctionBipolarTransistor(HBT)異質(zhì)結(jié)雙極型晶體Highfieldproperty高場特點(diǎn)High-performanceMOS.(H-MOS)高機(jī)能MOS.Hormalized歸一化Horizontalepitaxialreactor臥式外延反響器Hotcarrior熱載流子Hybridintegration混淆集成Iimplementinductance電感initializationvectorIV初始化向量integrity完全性interception截獲interruption中斷Image-force鏡象力Impactionization碰撞電離Impedance阻抗Imperfectstructure不完全構(gòu)造Implantationdose注入劑量Implantedion注入離子Impurity雜質(zhì)Impurityscattering雜志散射Incrementalresistance電阻增量(微分電阻)In-contactmask接觸式掩模Indiumtinoxide(ITO)銦錫氧化物Inducedchannel感應(yīng)溝道Infrared紅外的Injection注入Inputoffsetvoltage輸入掉調(diào)電壓Insulator絕緣體InsulatedGateFET(IGFET)絕緣柵FETIntegratedinjectionlogic集成注入邏輯Integration集成、積分Interconnection互連Interconnectiontimedelay互連延時(shí)Interdigitatedstructure交互式構(gòu)造Interface界面Interference干涉Internationalsystemofunions國際單位制Internallyscattering谷間散射Interpolation內(nèi)插法Intrinsic本征的Intrinsicsemiconductor本征半導(dǎo)體Inverseoperation反向工作Inversion反型Inverter倒相器Ion離子Ionbeam離子束Ionetching離子刻蝕Ionimplantation離子注入Ionization電離Ionizationenergy電離能Irradiation輻照Isolationland隔離島Isotropic各向同性JjavaappletJava小法度榜樣JunctionFET(JFET)結(jié)型場效應(yīng)管Junctionisolation結(jié)隔離Junctionspacing結(jié)間距Junctionside-wall結(jié)側(cè)壁Kkeywrapping密鑰包裝LLatchup閉鎖Lateral橫向的Lattice晶格Layout疆土Latticebinding/cell/constant/defect/distortion晶格結(jié)合力/晶胞/晶格/晶格常熟/晶格缺點(diǎn)/晶格畸變Leakagecurrent(泄)漏電流Levelshifting電平移動(dòng)Lifetime壽命linearity線性度Linkedbond共價(jià)鍵LiquidNitrogen液氮Liquid-phaseepitaxialgrowthtechnique液相外延進(jìn)展技巧Lithography光刻LightEmittingDiode(LED)發(fā)光二極管LoadlineorVariable負(fù)載線LocatingandWiring構(gòu)造布線Longitudinal縱向的Logicswing邏輯擺幅Lorentz洛淪茲Lumpedmodel集總模型Mmasquerade假裝messagedigest消息摘要modification修改multidrop多站,多歧路Majoritycarrier多半載流子Mask掩膜板,光刻板Masklevel掩模序號(hào)Maskset掩模組Mass-actionlaw質(zhì)量守恒定律Master-slaveDflip-flop主從D觸發(fā)器Matching匹配Maxwell麥克斯韋Meanfreepath平均自由程Meanderedemitterjunction梳狀發(fā)射極結(jié)Meantimebeforefailure(MTBF)平均工作時(shí)刻Megeto-resistance磁阻Mesa臺(tái)面MESFET-MetalSemiconductor金屬半導(dǎo)體FETMetallization金屬化Microelectronictechnique微電子技巧Microelectronics微電子學(xué)Millenindices密勒指數(shù)Minoritycarrier少數(shù)載流子Misfit掉配Mismatching掉配Mobileions可動(dòng)離子Mobility遷徙率Module模塊Modulate調(diào)制Molecularcrystal分子晶體MonolithicIC單片ICMOSFET金屬氧化物半導(dǎo)體場效應(yīng)晶體管Mos.Transistor(MOST)MOS.晶體管Multiplication倍增Modulator調(diào)制Multi-chipIC多芯片ICMulti-chipmodule(MCM)多芯片模塊Multiplicationcoefficient倍增因子Nnetworklevelattack收集層進(jìn)擊non-repudiation弗成狡賴Nakedchip未封裝的芯片(裸片)Negativefeedback負(fù)反饋Negativeresistance負(fù)阻Nesting套刻N(yùn)egative-temperature-coefficient負(fù)溫度系數(shù)Noisemargin噪聲容限Nonequilibrium非均衡Nonrolatile非揮發(fā)(易掉)性Normallyoff/on常閉/開Numericalanalysis數(shù)值分析Ooptimize使最優(yōu)化Occupiedband滿帶Officienay功率Offset偏移、掉調(diào)Onstandby待命狀況Ohmiccontact歐姆接觸Opencircuit開路Operatingpoint工作點(diǎn)Operatingbias工作偏置Operationalamplifier(OPAMP)運(yùn)算放大年夜器Opticalphoton=photon光子Opticalquenching光猝滅Opticaltransition光躍遷Optical-coupledisolator光耦合隔離器Organicsemiconductor有機(jī)半導(dǎo)體Orientation晶向、定向Outline外形Out-of-contactmask非接觸式掩模Outputcharacteristic輸出特點(diǎn)Outputvoltageswing輸出電壓擺幅Overcompensation過補(bǔ)償Over-currentprotection過流愛護(hù)Overshoot過沖Over-voltageprotection過壓愛護(hù)Overlap交迭Overload過載Oscillator振蕩器Oxide氧化物Oxidation氧化Oxidepassivation氧化層鈍化Pparallelparasitic寄生的partition[簡明英漢詞典]n.瓜分,劃分,瓜分,分開,隔離物vt.區(qū)分,隔開,瓜分presentationn.介紹,陳述,贈(zèng)予,表達(dá)primitiveprivateprobablyproceedingprofoundpropertypseudocollision偽沖突Package封裝Pad壓焊點(diǎn)Parameter參數(shù)Parasiticeffect寄生效應(yīng)Parasiticoscillation寄生振蕩Passination鈍化Passivecomponent無源元件Passivedevice無源器件Passivesurface鈍化界面Parasitictransistor寄生晶體管Peak-pointvoltage峰點(diǎn)電壓Peakvoltage峰值電壓Permanent-storagecircuit永久儲(chǔ)備電路Period周期Periodictable周期表Permeable-base可滲入滲出基區(qū)Phase-lockloop鎖相環(huán)Phasedrift相移Phononspectra聲子譜Photoconduction光電導(dǎo)Photodiode光電二極管Photoelectriccell光電池Photoelectriceffect光電效應(yīng)Photoenicdevices光子器件Photolithographicprocess光刻工藝(photo)resist(光敏)抗腐化劑Pin管腳Pinchoff夾斷PinningofFermilevel費(fèi)米能級(jí)的釘扎(效應(yīng))Planarprocess平面工藝Planartransistor平面晶體管Plasma等離子體Plezoelectriceffect壓電效應(yīng)Poissonequation泊松方程Pointcontact點(diǎn)接觸Polarity極性Polycrystal多晶Polymersemiconductor聚合物半導(dǎo)體Poly-silicon多晶硅Potential(電)勢Potentialbarrier勢壘Potentialwell勢阱Powerdissipation功耗Powertransistor功率晶體管Preamplifier前置放大年夜器Primaryflat主平面Principalaxes主軸Print-circuitboard(PCB)印制電路板Probability幾率Probe探針Process工藝Propagationdelay傳輸延時(shí)Pseudopotentialmethod膺勢發(fā)Punchthrough穿通Pulsetriggering/modulating脈沖觸發(fā)/調(diào)制PulseWidenModulator(PWM)脈沖寬度調(diào)制Punchthrough穿通Push-pullstage推挽級(jí)QQualityfactor品德因子Quantization量子化Quantum量子Quantumefficiency量子效應(yīng)Quantummechanics量子力學(xué)Quasi-Fermi—level準(zhǔn)費(fèi)米能級(jí)Quartz石英Rreleaseofmessagecontents宣布消息內(nèi)容register存放器registration注冊,報(bào)到,掛號(hào)resistance電阻routingrunningkeycipher活動(dòng)密鑰加密法Radiationconductivity輻射電導(dǎo)率Radiationdamage輻射毀傷Radiationfluxdensity輻射通量密度Radiationhardening輻射加固Radiationprotection輻射愛護(hù)Radiative-recombination輻照復(fù)合Radioactive放射性Reachthrough穿通Reactivesputteringsource反響濺射源Readdiode里德二極管Recombination復(fù)合Recoverydiode復(fù)原二極管Reciprocallattice倒核子Recoverytime復(fù)原時(shí)刻Rectifier整流器(管)Rectifyingcontact整流接觸Reference基準(zhǔn)點(diǎn)基準(zhǔn)參考點(diǎn)Refractiveindex折射率Register存放器Registration對(duì)準(zhǔn)Regulate操縱調(diào)劑Relaxationlifetime馳豫時(shí)刻Reliability可*性Resonance諧振Resistance電阻Resistor電阻器Resistivity電阻率Regulator穩(wěn)壓管(器)Relaxation馳豫Resonantfrequency共射頻率Responsetime響應(yīng)時(shí)刻Reverse反向的Reversebias反向偏置Sscratchscratchpad緩存secret密鑰substrate襯底synchronizesynthesizesymmetrickeycryptography對(duì)稱密鑰加密sophisticate復(fù)雜的suspend吊掛,延緩Samplingcircuit取樣電路Sapphire藍(lán)寶石(Al2O3)Satellitevalley衛(wèi)星谷Saturatedcurrentrange電流飽和區(qū)Saturationregion飽和區(qū)Saturation飽和的Scaleddown按比例縮小Scattering散射Schockleydiode肖克萊二極管Schottky肖特基Schottkybarrier肖特基勢壘Schottkycontact肖特基接觸Schrodingen薛定厄Scribinggrid劃片格Secondaryflat次平面Seedcrystal籽晶Segregation分凝Selectivity選擇性Selfaligned自對(duì)準(zhǔn)的Selfdiffusion自擴(kuò)散Semiconductor半導(dǎo)體Semiconductor-controlledrectifier可控硅Sendsitivity靈敏度Serial串行/串聯(lián)Seriesinductance串聯(lián)電感Settletime建立時(shí)刻Sheetresistance薄層電阻Shield樊籬Shortcircuit短路Shotnoise散粒噪聲Shunt分流Sidewallcapacitance邊墻電容Signal旌旗燈號(hào)Silicaglass石英玻璃Silicon硅Siliconcarbide碳化硅Silicondioxide(SiO2)二氧化硅SiliconNitride(Si3N4)氮化硅SiliconOnInsulator絕緣硅Siliverwhiskers銀須Simplecubic簡立方Singlecrystal單晶Sink沉Skineffect趨膚效應(yīng)Snaptime急變時(shí)刻Sneakpath潛行通路Sulethreshold亞閾的Solarbattery/cell太陽能電池Solidcircuit固體電路SolidSolubility固溶度Sonband子帶Source源極Sourcefollower源隨器Spacecharge空間電荷Specificheat(PT)熱Speed-powerproduct速度功耗乘積Spherical球面的Spin自旋Split決裂Spontaneousemission自發(fā)發(fā)射Spreadingresistance擴(kuò)大電阻Sputter濺射Stackingfault層錯(cuò)Staticcharacteristic靜態(tài)特點(diǎn)Stimulatedemission受激發(fā)射Stimulatedrecombination受激復(fù)合Storagetime儲(chǔ)備時(shí)刻Stress應(yīng)力Straggle誤差Sublimation升華Substrate襯底Substitutional替位式的Superlattice超晶格Supply電源Surface別處Surgecapacity浪涌才能Subscript下標(biāo)Switchingtime開關(guān)時(shí)刻Switch開關(guān)Ttoken令牌trace追
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