中小型異步電動機(jī)的MATLAB計算程序

1、中小型異步電動機(jī)的MATLAB計算程序%第一部分 額定數(shù)據(jù)和主要尺寸%myflag1 = 1; %myflag1 myflag1=1是三角形接法,myflag1=0是星形接法myflag2 = 0; %myflag2 myflag2=1是雙層槽絕緣占面積,myflag2=0是單層槽絕緣占面積myflag3 = 1; %myflag3 myflag3=1是無徑向通風(fēng)道的鐵心長度,myflag3=0是定轉(zhuǎn)子徑向通風(fēng)道不交錯，其它是通風(fēng)道交錯myflag4 = 1; %myflag4 myflag4=1是無徑向通風(fēng)道的凈鐵心長度,myflag4=0是有徑向通風(fēng)道的凈鐵心長度myflag5 = 2;

2、%myflag5 myflag5=1是雙層線圈,myflag5=2是單層線圈myflag6 = 0; %myflag6 myflag6=1是平底槽,myflag6=0是圓底槽myflag7 = 0; %myflag7 myflag7=1是平底槽,myflag7=0是圓底槽myflag8 = 1; %myflag8 myflag8=1是圓底槽,myflag8=0是半開口平底槽,其它為開口平底槽myflag9 = 1; %myflag9 myflag9=1是半開口槽和半閉開口槽,myflag9=0是開口槽myflag10 = 1; %myflag10 myflag10=1是單層線圈,myflag1

3、0=0是雙層線圈myflag11 = 1; %myflag11 myflag11=1是無徑向通風(fēng)道,myflag11=0是有徑向通風(fēng)道m(xù)yflag12 = 3; %myflag12 myflag12=1是雙層疊繞組,myflag12=2單層同心式,myflag12=3單層同心式(分組的）、交叉式,myflag12=4 單層鏈?zhǔn)絤yflag13 = 1; %myflag13 myfalg13=1是無徑向通風(fēng)道,myflag13=0是徑向通風(fēng)道m(xù)yflag14 = 4; %myflag14 myflag14=1是二級防護(hù)式,myflag14=2是四級及以上防護(hù)式,myflag14=3是二級封閉型自

4、扇冷式,myflag14=4是四級及以上封閉型自扇冷式myflag15 = 1; %myflag15 myflag15=1是半閉口槽,myflag15=0 是開口槽PN = 11000;Un = 380; %額定電壓f = 50; %頻率cos_phi = 0.84;eta_1 = 0.88;m1 = 3;p = 2; %極對數(shù)q1 = 3; %每極每相槽數(shù)%myflag1 myflag1=1是三角形接法，myflag1=0是星形接法。switch myflag1 case 1 UN_phi = Un; case 0 UN_phi = Un/sqrt(3);endIkw = PN/(m1*UN

5、_phi); %功電流Z1 = 2*m1*p*q1; %定子槽數(shù)Z2 = 26; %轉(zhuǎn)子槽數(shù)Zp1=Z1/(2*p);Zp2=Z2/(2*p); %定轉(zhuǎn)子每極槽數(shù)KB_2 = 0.0108*log10(PN)-0.013*p+0.931; %滿載電勢標(biāo)幺值alpha_p_1 = 0.68;Knm_1 = 1.10;Kdp1_1 = 0.96;A_1 = 26000; %由參考文獻(xiàn)電機(jī)設(shè)計圖10-2B_delta_1 = 0.67;n_1 = 1450;p_1 = KB_2*PN/(eta_1*cos_phi);V = 6.1*1*p_1/(alpha_p_1*Knm_1*Kdp1_1*A_1*

6、B_delta_1*n_1);Lambda=1.4; %由參考文獻(xiàn)電機(jī)設(shè)計表10-2Dt1_1 = (2*p*V/(Lambda*pi)(1/3);Dt1_D = 0.64; %由參考文獻(xiàn)電機(jī)設(shè)計表10-3 Dt1_D表示Dt1/DD1_1 = Dt1_1/(Dt1_D); %定子沖片外徑D1 = D1_1;Dt1 = D1*(Dt1_D);lef = V/(Dt12); %鐵心有效長度lt = lef - 0.006;delta = 0.3*(0.4+7*sqrt(Dt1*lef)*(1/103);D2=Dt1-2*delta; %轉(zhuǎn)子外徑Dt2 = 0.06; %轉(zhuǎn)子內(nèi)徑由轉(zhuǎn)軸直徑?jīng)Q定to

7、u=pi*Dt1/(2*p); %極距t1= pi* Dt1/Z1; %定子齒距t2=pi*D2/Z2; %轉(zhuǎn)子齒距bsk = 0.0145; %轉(zhuǎn)子斜槽寬一般取一個定子齒距t1alpha_1 = 1; %并聯(lián)支路alpha_1為1N_phi1_1 = (eta_1*cos_phi*pi*Dt1*A_1)/(m1*Ikw);Ns1 = (m1*alpha_1*N_phi1_1)/Z1;N_phi1 = Ns1*Z1/(m1*alpha_1);J1_1=5.0; %定子電密I1_1 = Ikw/eta_1*cos_phi; %定子電流初步值NA = I1_1/(alpha_1*J1_1); %每

8、相串聯(lián)導(dǎo)體數(shù) 用NA表示Nt1_1*Ac1_1KI = 0.089; %查參考文獻(xiàn)電機(jī)設(shè)計表10-10alpha = p*2*pi/Z1;Kd1=sin(q1*alpha/2)/(q1*sin(alpha/2); %分布系數(shù)Kp1=1; %短距系數(shù)Kdp1=Kd1*Kp1; %繞組系數(shù)I2_1 = KI*I1_1*3*N_phi1_1*Kdp1/Z2; %轉(zhuǎn)子導(dǎo)條電流IR_1=I2_1*Z2/(2*pi*p); %端環(huán)電流JR_1 = 2.1;AR_1=IR_1/JR_1; %端環(huán)面積h=0.002; %槽鍥b01 = 0.0038;b11 = 0.0077;bt1 = 0.00745;bt2

9、 = 0.01135;h01 = 0.0008;h11 = 0.0011;h21 = 0.0152;hs1 = 0.0211;hs2 = 0.0289;r21 = 0.0051;r22 = 0.0024;hs_1 = 0.0152; %定子槽型b02 = 0.001;b12 = 0.0048;h02 = 0.0005;h12 = 0.0011;h22 = 0.0249; %轉(zhuǎn)子槽型As=(2*r21+b11)*(hs_1-h)/2+pi*r21*r21; %槽面積Delta_t = 0.0003;%myflag2 myflag2=1是雙層槽絕緣占面積myflag2=0是單層槽絕緣占面積swit

10、ch myflag2 case 1 At = Delta_t*(2*hs_1+pi*r21+2*r21+b11); case 0 At = Delta_t*(2*hs_1+pi*r21);endAef = As - At; %槽有效面積Nt1 = 2; %并繞根數(shù)d =1.38*10(-3); %絕緣后直徑Sf = Nt1*Ns1*d2/Aef; % ×100% %槽滿率%myflag3 myflag3=1是無徑向通風(fēng)道的鐵心長度，myflag3=0是定轉(zhuǎn)子徑向通風(fēng)道不交錯，其它是通風(fēng)道交錯。switch myflag3 case 1 lef = lt + 2*delta; case

11、 0 lef = lt-nv1*bv1_1; otherwise lef = lt-(nv1*bv1_1+nv2*bv2_1);end %lt鐵心長度kfe=0.95;%myflag4 myflag4=1是無徑向通風(fēng)道的凈鐵心長度 myflag4=0是有徑向通風(fēng)道的凈鐵心長度switch myflag4 case 1 lfe = kfe*lt; case 0 lfe = kfe*(lt-nv*bv);endN_phi1_1 = eta_1*cos_phi*pi*Dt1*A_1/(m1*Ikw); %每相串聯(lián)導(dǎo)體數(shù)alpha_1 = 1; %并聯(lián)支路Ns1_1 = m1*alpha_1*N_ph

12、i1_1/Z1; %每槽導(dǎo)體數(shù)%myflag5 myflag5=1是雙層線圈myflag5=2是單層線圈switch myflag5 case 1 Ns1 = 2*Ns1_1; case 2 Ns1 = Ns1_1;end %每線圈匝數(shù)N2 =N_phi1*Kdp1; %每相有效串聯(lián)導(dǎo)體數(shù)N1 = N_phi1/2; %每相串聯(lián)匝數(shù)%第二部分 磁路計算%KB_1 = 0.927; % KB_1 = 1-epsilon_l = 0.927;%E1=(1-epsilon_l)*UN_phi=0.927*UN_phi; %E1為滿載相電勢E1 = 0.927*UN_phi;Ks_1 = 1.15;K

13、s = 1.148;Knm = 1.0975;Phi=E1/(4*Knm*Kdp1*f*N1); %每極磁通Kfe = 0.95;At1 = Kfe*lt*bt1*Zp1; %定子每極下齒部截面積At2 = Kfe*lt*bt2*Zp2; %轉(zhuǎn)子每極下齒部截面積Bt1_1=1.4; %初取值%myflag6 myflag6=1是平底槽 myflag6=0是圓底槽switch myflag6 case 1 hf1_1 = (D1-Dt1)/2-hs1; case 0 hf1_1 = (D1-Dt1)/2-hs1+r21/3;end %定子軛部計算高度Af1 =Kfe*lt*hf1_1; %定子軛

14、部截面積%myflag7 myflag7=1是平底槽 myflag7=0是圓底槽switch myflag7 case 1 hf2_2 = (D2-Dt2)/2-hs2; case 0 hf2_2 = (D2-Dt2)/2-hs2+r22/3;end %轉(zhuǎn)子軛部計算高度Af2 = Kfe*lt*hf2_2; %轉(zhuǎn)子軛部截面積tau = 0.1335;A_delta = tau*lef; %空氣隙截面積alpha_p1 = 0.67; %計算極弧系數(shù)Fs = 1/alpha_p1; %波幅系數(shù)B_s = Fs*Phi/A_delta; %氣隙磁密Bt1 = Fs*Phi/At1; %轉(zhuǎn)子齒磁密B

15、t2 = Fs*Phi/At2; %定子齒磁密Bf1 = Phi/2*Af1; %轉(zhuǎn)子軛磁密Bf2 = Phi/2*Af2; %定子軛磁密B_delta = Fs*Phi/A_delta; %空氣隙磁密Ht1 =15.74;Ht2 =9.5; %磁場強(qiáng)度%myflag8 myflag8=1是圓底槽 myflag8=0是半開口平底槽 其它為開口平底槽switch myflag8 case 1 Lt1 = (h11+h21)+r21/3; Lt2 = (h12+h22)+r22/3; case 0 Lt1 = h11+h21 ; Lt2 = h12+h22; otherwise Lt1 = Hs1

16、; Lt2 = h12+h22;End %Lt1定子,Lt2轉(zhuǎn)子齒部磁路計算長度Lf1_1 = pi*(D1-hf1_1)/(2*p*2); %定子軛部磁路計算長度Lf2_1 = pi*(Dt1-hf2_2)/(2*p*2); %轉(zhuǎn)子軛部磁路計算長度%myflag9 myflag9=1是半開口槽和半閉開口槽 myflag9=0是開口槽switch myflag9 case 1 K_delta=t1*(4.4*delta+0.75*b01)/(t1*(4.4*delta+0.75*b01)-b012); case 0 K_delta = t1*(5*delta+b01)/(t1*(5*delta

17、+b01)-b012);enddelta_ef = K_delta*delta; %有效氣隙長度Ft1 = Ht1*Lt1; %定子齒部磁壓降Ft2 = Ht2*Lt2; %轉(zhuǎn)子齒部磁壓降Cf1 =0.557; Cf2=0.445;Hf1 = 8.23*102; Hf2 = 7.29*102;Ff1 = Cf1*Hf1*Lf1_1; %定子軛部磁壓降Ff2 = Cf2*Hf2*Lf2_1; %轉(zhuǎn)子軛部磁壓降mu_0 = 1.25*10(-6);F_delta = K_delta*delta* B_delta/mu_0; %空氣隙磁壓降K_s= (F_delta + Ft1 + Ft2)/F_d

18、elta; %飽和系數(shù)Ks_2 = Ks- (Ks-Ks_1)/3;Ks_1 = Ks_2;F0 = F_delta + Ft1 + Ft2 + Ff1 + Ff2; %總磁壓降Im = 2*p*F0/(0.9*m1*N1*Kdp1); %滿載磁化電流Im_= Im/Ikw; %滿載磁化電流標(biāo)幺值Xm_= 1/Im_; %勵磁電抗標(biāo)幺值%第三部分 參數(shù)計算%d1 = 0.015; %為線圈直線部分伸出鐵心長度lb = lt +2*d1; %為直線部分長Kc = 1.2;beta_ = 0.852;tau_v = pi*(Dt1 + 2*(h01 + h11) + h21 + r21)/(2*p

19、)*beta_; %單層同心式或交叉式線圈beta取平均值Cs = tau_v/2*cos(alpha);%cos(alpha) = sqrt(1 - sin(alpha)2);sin_alpha = (b11 + 2*r21)/(b11 + 2*r21 + 2*b11);%myflag10 myflag10=1是單層線圈 myflag10=0 是雙層線圈switch myflag10 case 1 lc = lb + Kc * tau_v; case 0 lc = lb + 2 * Cs;endfd = Cs*sin(alpha); %雙層線圈端部軸向投影長lb = 2*d1 + Kc*ta

20、u_v; %單層線圈端部平均長Cx = 4*pi*f*mu_0*(N1*Kdp1)2*lef*PN/(m1*p*(UN_phi)2); % = 0.263*(N1*Kdp12)*lef*Pn/p*(U_Nphi)2*(1/103); %漏抗系數(shù)Ku1 =1.0; KL1 =1.0;lambda_u1 = h01/b01+2*h11/(b01+b11);lambda_L1 = 0.0765;lambda_s1 = Ku1*lambda_u1 + KL1*lambda_L1; %lambda_s1為定子槽比漏磁導(dǎo) Ku1,KL1查參考文獻(xiàn)電機(jī)設(shè)計圖4-9，lambda_u1,lambda_L1查附

21、錄% myflag11=1是無徑向通風(fēng)道 myflag11=0是有徑向通風(fēng)道switch myflag11 case 1 lt1_1 = lt; %無徑向通風(fēng)道時 case 0 lt1_1 = lt - nv1*bv1_1; end %有徑向通風(fēng)道時 bv1_1是通風(fēng)道損失寬度 ，從圖參考文獻(xiàn)電機(jī)設(shè)計附1-9查出Xs1_ = 2*m1*p*lt1_1*lambda_s1/(Z1*Kdp12*lef)*Cx; %定子槽漏抗Sigma_s = 0.0129;X_delta1_ = m1*tau*Sigma_s/(pi2*delta_ef*Kdp12*Ks)*Cx; %定子諧波漏抗Sigma_s從參

22、考文獻(xiàn)電機(jī)設(shè)計圖4-10或附錄八中查出tau_y = 0.1292;%myflag12 myflag12=1是雙層疊繞組,myflag12=2單層同心式,myflag12=3單層同心式(分組的）、交叉式,myflag12=4 單層鏈?zhǔn)絪witch myflag12 case 1 XE1_ = 1.2*(d1 +0.5*fd)/lef*Cx; case 2 XE1_ = 0.67*(lb - 0.64*tau_y)/(lef*Kdp12)*Cx; case 3 XE1_ = 0.47*(lb-0.64*tau_y)/(lef*Kdp12)*Cx; case 4 XE1_ = 0.2*lb/(le

23、f*Kdp12)*Cx;end %雙層疊繞組 XE1表示定子端部漏抗X_sigma1_ = Xs1_+X_delta1_+XE1_ ; %定子漏抗lambda_u2 = h02/b02;lambda_L = 1.806; lambda_L2 = 2*h12/(b02+b12)+lambda_L;lambda_s2 = lambda_u2+lambda_L2; %轉(zhuǎn)子槽比漏抗 lambda_u2 lambda_L2查參考文獻(xiàn)電機(jī)設(shè)計附錄四%myflag13 myfalt13=1是無徑向通風(fēng)道 myflag13=0 是有徑向通風(fēng)道switch myflag13 case 1 lt2_1 =lt;

24、case 0 lt2_1 = lt-nv2*bv2_1;end %bv2從參考文獻(xiàn)電機(jī)設(shè)計附錄19中查出Xs2_ = 2*m1*p*lt2_1*lambda_s2/(Z2*lef)*Cx; %轉(zhuǎn)子槽漏抗Sigma_R = 0.0195;X_delta2_ = m1*tau*Sigma_R/(pi2*delta_ef*Ks)*Cx; %轉(zhuǎn)子諧波漏抗 Sigma_R從參考文獻(xiàn)電機(jī)設(shè)計圖4-11或附錄九查出DR = 0.1285;XB2_ = 0.757/lef*(lb - lt)/1.13 + DR/2*p)*Cx;%轉(zhuǎn)子端部漏抗 見參考文獻(xiàn)電機(jī)設(shè)計圖附1-5Xsk_ = 0.5*(bsk/t2)

25、2*X_delta2_; %轉(zhuǎn)子斜槽漏抗X_sigma2_ = Xs2_ + X_delta2_ + XB2_ + Xsk_; %轉(zhuǎn)子漏抗X_sigma_ = X_sigma1_ + X_sigma2_; %總漏抗rho_0 = 0.0217*(1/106);Ac1_1 = 1.327*10(-6);R1 = rho_0*(2*N1*lc/(Nt1*Ac1_1*alpha_1); %rho為鋁 銅的密度R1_ = R1*Ikw/UN_phi; %定子相電阻標(biāo)幺值C =1.1;rho_1 = 8.9*103;Gw = C*lc*Ns1*Z1*Ac1_1*Nt1*rho_1; %定子導(dǎo)線重量 C為

26、考慮導(dǎo)線絕緣和引線重量的系數(shù) rho_1為導(dǎo)線密度KFe = 0.95;rho_F_1 = 7.8*103;GFe = KFe*lt*(D1 + delta)2*rho_F_1; %GFe為硅鋼片重量delta = 5*(1/103); %delta為沖剪余量rho_F_1 = 7.8*103;KB = 1.04;rho = 0.0434*(1/106);lB = 0.155;AB = 131.75*10(-6);AR = 400*10(-6);RB_1 = rho*KB*lB/AB*(4*m1*(N1*Kdp1)2)/Z2; %導(dǎo)條電阻折算值 KB是疊片不整齊造成導(dǎo)條電阻增加的系數(shù) rho為

27、電阻率RR_1 = rho*(DR*Z2)/(2*pi*p2*AR)*(4*m1*(N1*Kdp1)2/Z2); %端環(huán)電阻折算值RB_ = RB_1*Ikw/UN_phi; %導(dǎo)條電阻標(biāo)幺值RR_ = RR_1*Ikw/UN_phi; %端環(huán)電阻標(biāo)幺值R2_ = RB_ + RR_; %轉(zhuǎn)子電阻標(biāo)幺值%第四部分 工作性能計算%eta = 1;while (eta-eta_1)/eta) > (0.5/100) I1p_ = 1/eta_1; %滿載時定子電流有功分量標(biāo)幺值 Xms_ = 2.404; sigma_1 = 1+X_sigma_/Xms_;Ix_ = sigma_1*X_s

28、igma_*I1p_2*(1+(sigma_1*X_sigma_*I1p_)2); %滿載時定子電流無功分量標(biāo)幺值 I1Q_ = Im_+Ix_; %滿載時定子電流無功分量標(biāo)幺值KB = 1-(I1p_*R1_+I1Q_*X_sigma_); %滿載電勢標(biāo)幺值KB表示1-epsilon_LEP = 1-Im_*X_sigma_; %空載電勢標(biāo)幺值 EP表示1-epsilon_0 Bt10 = EP/KB*Bt1; %空載時定子齒磁密 Bt20 = EP/KB*Bt2; %空載時轉(zhuǎn)子齒磁密 Bf10 = EP/KB*Bf1; %空載時定子軛磁密 Bf20 = EP/KB*Bf2; %空載時轉(zhuǎn)子軛

29、磁密 B_delta0 = EP/KB*B_delta; %空載時氣隙磁密 Ht10 = 22.52*102; Ht20 = 11.86*102; Hf10 = 10*102; Hf20 = 8.79*102; Ft10 = Ht10*Lt1; %空載定子齒磁壓降 Ft20 = Ht20*Lt2; %空載轉(zhuǎn)子齒磁壓降 Ff10 = Cf1*Hf10*Lf1_1; %空載定子軛磁壓降 Ff20 = Cf2*Hf20*Lf2_1; %空載轉(zhuǎn)子軛磁壓降F_delta_0 = K_delta*delta*B_delta0/mu_0; %空載氣隙磁壓降 F00 = F_delta_0 + Ft10 +

30、Ft20 + Ff10 + Ff20; %空載總磁壓降 Im0 = 2*p*F00/(0.9*m1*N1*Kdp1); %空載磁化電流 I1_ = sqrt(I1p_2+I1Q_2); %定子電流標(biāo)幺值 I1 = I1_*Ikw; %定子電流實際值 J1 = I1/(alpha_1*Nt1*Ac1_1); %定子電流密度 A1 = m1*N_phi1*I1/(pi*Dt1); %線負(fù)荷 I2_ = sqrt(I1p_2+Ix_2); %轉(zhuǎn)子電流標(biāo)幺值 I2 = I2_*Ikw*m1*N_phi1*Kdp1/Z2; %轉(zhuǎn)子電流實際值 IR = I2*Z2/(2*pi*p); %端環(huán)電流實際值 J

31、B = I2/AB; %轉(zhuǎn)子電流導(dǎo)條電密 JR = IR/AR; %轉(zhuǎn)子電流端環(huán)電密 Pcu1_ = I1_2*R1_; Pcu1 = Pcu1_*PN; %定子電氣損耗 PAl2_ = I2_2*R2_; PAl2 = PAl2_*PN; %轉(zhuǎn)子電氣損耗 Ps_ = 0.02; Ps = Ps_*PN; %附加損耗%myflag14 myflag14=1是二級防護(hù)式,myflag14=2是四級及以上防護(hù)式,%myflag14=3是二級封閉型自扇冷式,myflag14=4是四級及以上封閉型自扇冷式 switch myflag14 case 1 Pfw=5.5*(3/p)2*(D2)3*103;

32、 case 2 Pfw=6.5*(3/p)2*(D2)3*103; case 3 Pfw=13*(1-D1)*(3/p)2*(D2)3*103; case 4 Pfw=(3/p)2*(D1)4*104; endPfw_ = Pfw/PN ; rho_Fe_1 = 7.8*103; At1 = 9873*10(-6); Lt1 = 16.9*10(-3); Af1 = 3770*10(-6); Lf1 = 92*10(-3); Gt = 2*p*At1*Lt1*rho_Fe_1; %定子齒重量 Gf = 2*p*Af1*Lf1*rho_Fe_1; %定子軛重量 Phet =5.388; Phef

33、 =3.765; %根據(jù)Bt10和Bf10查參考文獻(xiàn)電機(jī)設(shè)計附錄六 PFet = Phet*Gt; %定子齒損耗 PFef = Phef*Gf; %定子軛損耗 %myflag15 myflag15=1是半閉口槽myflag15=0 是開口槽 switch myflag15 case 1 k1 = 2.5; k2 = 2; case 0 k1 = 3.0; k2 = 2.5; endPFe = k1*Phet+k2*Phef; %定子鐵耗 PFe_ = PFe/PN; %鐵耗標(biāo)幺值 Sigma_p_ = Pcu1_+PAl2_+Ps_+Pfw_+PFe_; %總損耗標(biāo)幺值 PN1_ = 1+Si

34、gma_p_; %輸入功率 eta = 1-Sigma_p_/PN1_; %效率 eta_1 = eta+1/100;endcos_phi = I1p_/I1_; %功率因數(shù)PFetr = (1-1/2)*163;PFetf = (1-1/2.5)*70.2;PFer_=(PFetr+PFetf)/PN;SN = PAl2_/(1+PAl2_+PFer_+Ps_+Pfw_); %轉(zhuǎn)差率n_N = 60*f/p*(1-SN); %轉(zhuǎn)速Tm_ = (1-SN)/(2*(R1_+sqrt(R1_2+X_sigma_2); %最大轉(zhuǎn)矩倍數(shù)%第五部分 起動性能計算%Ist = 100.13;Ist_1

35、= 3.4*Tm_*Ikw; %起動電流假定值while (Ist-Ist_1)/Ist > (1/100)Fst = Ist_1*Ns1/alpha_1*0.707*(Ku1+Kd12*Kp1*Z1/Z2)*sqrt(EP);%起動時定子轉(zhuǎn)子槽磁勢平均值 beta_0 = 0.64+2.5*sqrt(delta/(t1+t2);BL = mu_0*Fst/2*delta*beta_0; %空氣隙時漏磁場的虛擬磁密Ks = 0.46; %1-Ks = 0.54; %漏抗飽和系數(shù)由參考文獻(xiàn)電機(jī)設(shè)計圖10-18查Cs1 = (t1-b01)*(1-Ks); %齒頂漏磁飽和引起的定子齒頂寬度的減少Cs2= (t2-b02)*(1-Ks