第十九界國(guó)際科學(xué)與工程會(huì)議（光電子和夜視裝置）專家交流發(fā)言匯總 XIX International Scientific and Engineering Conference on Photoelectronics and Night Vision Devices

XIXInternationalScientificandEngineeringConferenceonPhotoelectronicsandNightVisionDevicesMay23-26,2006Moscow,RussiaABSTRACTSXIXInternationalScientificandEngineeringConferenceonPhotoelectronicsandNightVisionDevicesIsorganizedby:“Orion”RD&PCenterConferenceissupportedby:MinistryofEducationandScienceofRF,FederalAgencyofIndustry,FederalAgencyofScienceandInnovations,RussianAcademyofScience,GovernmentofMoscow,RussianChapterofSPIE–theInternationalSocietyforOpticalEngineering(SPIE/RUS)XIXInternationalScientificandEngineeringConferenceOnPhotoelectronicsandNightVisionDevicesMay23-26,2006Moscow,RussiaABSTRACTSStateResearchCenterofRussianFederation“Orion”RD&PCenterMoscow,2006InternationalProgramCommitteeChairman:A.M.Filachev,“Orion”RD&PCenter,RussiaVice-chairmen:V.P.Ponomarenko,“Orion”RD&PCenter,RussiaA.I.Dirochka,“Orion”RD&PCenter,RussiaScientificsecretary:I.S.Gaydukova,“RD&PCenter“Orion”,RussiaCommitteemembers:Zh.I.Alferov–PTIRASA.L.Aseev–IPSSDRASA.S.Bugaev–MIPT,RussiaY.V.Gulyaev–IRERASV.P.Ejov–Sapphire,JSC,RussiaA.V.Elyutin–IRM,RussiaV.P.Ivanov–FSSCGIPO,RussiaV.I.Ryzhi–UniversityofAIZU,JapanO.N.Krochin–PIRASKumarVikram–Solid-StatePhys.Lab.,IndiaN.N.Kudryavtsev–MIPT,RussiaY.K.Pojela–IPS,LithuaniaV.I.Pokrishkin–CCB“Peleng”,ByelorussiaG.N.Popov–CCB“Tochpribor”,RussiaRogalskyAntoni–WAT,PolandL.D.Saginov–RD&PCenter“Orion”E.Y.Salaev–InstituteofPhysics,AzerbaijanF.F.Sizov–ISP,UkraineR.M.Stepanov–NRI“Electron”,RussiaY.P.Yakovlev–PTIRASOrganizationcommitteeChairman–A.M.Filachev,“Orion”RD&PCenter,RussiaVicechairmen:M.D.Korneeva,“Orion”RD&PCenter,RussiaV.P.Ponomarenko,“Orion”RD&PCenter,RussiaExecutivesecretary–M.I.Romanishina,“Orion”RD&PCenterCommitteemembers:V.P.Avtonomov–RussianAgencyofConventionalArmamentsE.I.Akopov–SPIERUSK.A.Volkov–“Orion”RD&PCenter,RussiaL.Ya.Grinchenko-“Orion”RD&PCenter,RussiaA.I.Dirochka-“Orion”RD&PCenter,RussiaA.G.Kabanov–MinistryofEducationandScience,RussiaA.P.Potapov–FederalAgencyofIndustryV.M.Proskurin–“Orion”RD&PCenter,RussiaL.D.Saginov–“Orion”RD&PCenter,RussiaA.M.Tokarev–“Orion”RD&PCenter,RussiaV.V.Shabarov–GovernmentofMoscowGeneralinformationDataandsceneofConferencecarryingoutConferenceiscarryingoutin“Orion”RD&PCenterattheaddress:Kosinskaja,9,block2G,Moscow(near“Vykhino”metrostation).RegistrationParticipant’sregistration,workingsetsdeliveryandthestampoftravelingpapersarecarryingoutonthegroundfloor.ConferencefeeAregistrationfeeincludingparticipationinascientificandsocialprogram,publishingabstractsandproceedingsoftheConference,lunchetc.willbe135EUR,butforparticipantsofRussiaandCISitwillbe40EUR(20EURforstudentsandpost-graduatedstudents,30EURforspeakers).Theeachreportcanbepresentedbyoneauthoronly.Participantscanpayfeesatregistration.П01InfraredPhotoelectronicsinRussia(60thAnniversaryofRussia’sInstitute801)V.P.Ponomarenko,A.M.Filachev“Orion”RD&PCenter,Moscow,RussiaMainstagesformation(1946-2006)ofinfraredtechnologyandelectronicsintheUSSRandRussianFederationfollowingaftertheorganizationoftheInstituteN801aredescribed.InstituteN801laterwasInstituteofAppliedPhysicsandnow–theleadingInstituteof“Orion”RD&PCenterObtainedto60thanniversaryof“Orion”RD&PCenterthemostsignificantresultsinfieldofcreatingthephotoelectonics,baseofelementselectronicandionictechnology,optical-electronicsequipmentarepresented.П02PhotodetectorsfortheSecondGenerationThermovisionSystemsI.D.Burlakov1,E.V.Degtyarov2,V.P.Ponomarenko1,A.M.Filachev11“Orion”RD&PCenter,Moscow,Russia2SRTIofDefenceMinistry,Mytichy,Moscowregion,RussiaInfraredsensordevelopmentshavebeencarriedoutforcreationshortwaveIR(SWIR,1to3m),mediumwaveIR(MWIR,3to5m)andlongwaveIR(LWIR,8to12m)“SecondGeneration”FPAsonthebasisofplumbumchalcogenide(PbS,PbSe),indiumantimonide(InSb),andmercurycadmiumtelluride(CdXHg1-XTe).Deviceperformanceandoperationalfunctionalityof2x256,4x288(MCT),2x128(PbS,PbSe)Time&DelayIntegration(TDI)focalplanearrays,and256x256,384x288,768x576(MCT),256x256(InSb)staringfocalplanearrayswithcooledpretreatmentsignalprocessingreadoutelectronicsarespecified.SomecommercialandmilitarydefenceapplicationsofFPAsforadvanceIRsensorsystemsarediscussed.П03CurrentStateandProspectsofThermoelectricityApplicationinOptoelectronicsL.I.Anatychuk,V.V.RazinkovInstituteofThermoelectricity,Chernivtsi,UkraineThepaperdealswithadescriptionoftwobasicopportunitiesofthermoelectricityapplicationinphotodetectordevices:-forcoolingphotodetectors(Peltiereffect);-forcreatingnonselectivesensors(Seebeckeffect).Photodetectorsconvenientlycombinedwiththermoelectriccoolingandtheirrespectiverationalareasofcoolingtemperaturesareanalyzed.Informationontheachievementsintheareaofcomputerdesignofboththermoelectriccoolersforphotoelectronicdevicesandforoptoelectronicsystemswiththermoelectriccooleronthewholeisreported.Peculiaritiesoftechniqueformanufacturingthermoelectricmodulesforoptoelectronicdevices,includingoperationinvacuumareconsidered.Informationonthetendenciesinimprovementofthermoelectricfigureofmerit,anti-diffusionlayers,mechanicalandlifestabilityisgiven.Examplesofefficientcombinationofoptoelectronicdeviceswiththermoelectriccoolingarecited.InformationisalsogivenontheuseoflongitudinalandtransverseSeebeckeffectstocreatethermoelectricsensors,peculiaritiesoftheirstructuresandmanufacturingtechniques,parametersandcharacteristicsofdetectors,rationalapplicationareas.Thewaysforfurtherqualityimprovementofsuchdevicesareconsidered.П04HgCdTeLargeStaringArraysatSOFRADIRPhilippeTriboletSOFRADIR,France43-47rueCamillePelletan,92290CH?TENAY-MALABRY,FrancePhone:8.77.56Fax:3.85.97E-mail:philippe.tribolet@sofradir ThestaringarraynumbersofpixelsarelargerandlargerandoffersystemsolutionsinthedifferentIRwavebands.AtSofradir,theHgCdTe(MercuryCadmiumTelluride/MCT)materialandprocess,aswellasthehybridizationtechnology,havebeentakentoanevenmoreadvancedlevelofsophisticationtoachievethesenewhighperformancestaringarrays.AlotoftechnologicalimprovementhavebeenmaderegardinguniformityofFocalPlanArrays(FPA),read-outcircuitswithnewfunctionsliketheAnalogictoDigitalConversion(ADC),andfinallythereliabilityofthewholedewardetectorandcoolerassemblyhavebeendrasticallyincreasedduringtheselastyears.Inmid-wave(MWIR),640x512and1280x1024HgCdTedetectorsarepresentedandinlong-wave(LWIR),288x384HgCdTehighperformancestaringarraysarepresentedandcoveralargespectralwavelengthrange.Lastly,thedevelopmenttrendsforfutureIRdetectorsarepresented.Keywords:Infrareddetectors,LW,MW,HgCdTe,megapixel,focalplanearrays(FPA)П05TheGeneralFeaturesRequiredofFutureGenerationIRDetectorsY.I.Belousov“ScientificDesignCentre“Electro–OpticalSurveillanceSystems”TheBranchof“CentralScientificResearchInstitute“Cometa,St.Petersburg,RussiaIRdetectors(IRD)musthaveaheaddevelopinginaccordingwithhighlyimportantfunctionatopto–electronicssystemsdesigning.ItisappropriatetodiscusthemostsignificantpropertiesofforeseeablefuturegenerationIRD,astheydeterminatetheappearanceofthenewestIRdevices.TherearetwoproblemsthatcanbesolvedonlybyjointeffortsoforiginatorsandconsumersofIRD.IngeneraltermsthefirstproblemmaybedesignatedastheproblemofpredicatingnewpotentialsofmodernIRD.ThesecondproblemistodeterminatethesetofnecessaryandsufficientpropertiesIRDandtheirmeasurementmethodsforcompletelycharacterizationthesameobjects.ThefuturegenerationofIRDisnotresultofordinaryincreasingthenumberandsensitivityofFPAelementsonly.IRDmusthavecapabilitytoregistersuchphysicalparametersofopticalfieldsthataredistinctivefeaturesofrealtargetscontrarytothefalsesameandtobackground.Forexample,widthandpositionofthespectralbandIRdevicesmustbeattimecontrolledaccordingtothecurrentobservingconditions.Itmaybefoundmoreefficientlytoexchangepotentially“extrasensivity”IRDforitscapabilitytoregisterpolarizationfeaturesIRradiationofobservingobjects.Fromthepresentstateofdescriptiondynamicalprocessesofgeneration,propagationandregistrationopticalsignalsitmaybeconfirmed,thatfuture-genIRdevisesmusthavepossibilitytoadapttocurrentconditionsofapplicationinadditiontoexposittimethespectral,polarizationandothersownsparameters.SothisrealpossibilityistheessentiallyimportantcharacteristicfeatureofthenewestIRD.TorevealallthisnewparametersIRDandtodeterminatetheirvalueforefficientlyofIRdeviseatall–isthefirstproblem.Thesecondproblemisassociatedwiththefirstone.ItimpliesthatmodernpracticeusetoomuchparametersfordescriptionIRDcharacteristics,whicharecomfortablefortheirproducersbutnotusefulforconsumersIRD.ItisnexttoimpossiblebytrivialwaytocompareseveraldifferenttypesofIRDorforperformanceevaluationsofIRdevices.ThereisneedformodernsystemofIRD-characteristicsandthemethodstheirmeasurementsthataresuitableforpresentandforpotentialdevises.Wesuggesttoformaninitiativeexpertgroupthatwilldrewupaplanofsettlingthisproblemsandreportitatthenextconference.П06HeteroepitaxialStructuresHgCdTeforInfraredDetectorsS.AAlfimov.,A.PAntsiferov.,V.M.Belokonev,V.S.Varavin,S.A.Dvoretsky,E.V.Degtyarev,V.A.Kartashov,A.D.Kraylyuk,N.N.Mikhailov,V.G.Remesnik,I.V.Sabinina,R.N.Smirnov,Yu.G.Sidorov,A.L.AseevInstituteofSemiconductorPhysicsofRAS,Novosibirsk,RussiaLavrent’evaav.13,630090,E-mail:sidorov@isp.nsc.ruThedevelopmentofthermalimagingsystemisbasedoninfraredtwo-colorandlargeformatFPA.ForsuchFPAthebasismaterialisHgCdTe(MCT)heteroepitaxialstructures(HS)grownbymolecularbeamepitaxy(MBE).Wecontinuetheworkingofphysicalchemicalprocessesofgrowth,intentionaldopingduringgrowthandmechanismsofdefectformationwiththepurposeoffuturedevelopmentoftechnologyforfabricationHgCdTematerialforthirdgenerationofinfrareddetectors.ThedevelopmentoftechnologyforindustrialproductionofMCTHSonGaAssubstratedopedbyindiumandarsenicwascarriedout.As-grownIn-dopedMCTHS’saren-typeconductivity.Itwasfoundthatcarrierconcentrationinrange21014–21017cm-3changeslinearitywithincorporatedInconcentrationincrystallattice.Thedecreaseofelectronmobilityatincreaseofitsconcentrationat77Кqualitativelycorrespondstocarrierscatteringonionizedimpuritiesandpolaropticalphonons.Theminoritylifetimeat77KwaslimitedbyAugerorSHRcenterrecombinationprocessesforcarrierconcentrationoverorlower51015cm-3,respectively.TherewasdonethethermodynamicanalysisofprocessofInincorporationinmetallicsublatticeanddetermineditsenergeticcharacteristics.AtarsenicdopingwithAs4as-grownMCTHS’shaven-typeconductivity.Thearsenicactivationforconversionofconductivitytypewascarriedoutbytwostagethermalannealing.AfterthatprocedureAs-dopedMCTHS’swerep-typeconductivitywithcarrierconcentrationandmobility(820)1015cm-3and400500cm2V-1s-1.Theminoritylifetimevariedinrange100300ns(XCdTe0,22-0,23)thatoverorderhigherthanatHgvacancydopedHgCdTep-type.WedevelopedthetechnologicalprinciplesfordecreaseofV-shapedefectsupto200-300cm-2onthebasisofdetailedstudythemechanismitsformation.П07ThermalImagingCamerawiththeLinear4х288FPAWorkinginaTDIModeR.M.Aleev2,A.V.Busarev2,V.V.Egorova2,L.K.Krayushkina2,P.P.Malevanyj2,R.A.Nasibullin2,V.V.Poluneev,V.P.Ponomarenko1,V.N.Solyakov1,A.M.Filachev11“Orion”RD&PCenterORION,Moscow,Russia2Joint-StockCompanyNPF“Optooil”,Kazan,Russia2-ndgeneration’sthermalimagingcamerawasdeveloped,madeandinvestigated.Cameraisequippedwith3fieldofview(FOV)optics.Linear4х288FPAdevelopedbyRD&PCenterORION,Moscow,Russiawasusedasaphotodetector.FPAbasedonMCTphotodiodesandusedinaTDImode.Spectralresponserangeis7-11.5μm,pixeldimensionsis28х28μm.Featureofdevelopmentispresenceofthreefieldsofviewthatallowsusingcameraforthedecisionofproblemsofexplainingtheground,search,detectionandrecognitionofobjectsinvariousareasofcivilandmilitarypurpose.ModesofoperationSearchDetectionRecognitionFieldofview,(FOV)°20,4х275,1х6,71,5х2,0Elementaryfieldofview,mrad1,330,330,1Dimensions,mm490х245х390Weight,kg*20Powerconsumption,W,*115Thefieldofviewisformedduetoscanningwithfrequency50Hzunderthesawtoothlawtheflatmirrorestablishedinparallelbeamsinanentrancepupilofa4-lensesshortfocusobjective,havingtheintermediateimageforinputcalibrationsourcesofradiationduringreversemotionofscanningmirrorandbreakingmirrorforrealizationofinterlacedscanning.Thisenablesobtainframeof576х768electronicpixels.Thermalimagingcamerahasinparallellocatedanentrancewindowofawidefieldofviewandanentrancewindowofa4-lensestelescopewithdiscretelyvariedzoom.Changeofafieldofviewoccursduetoaturnandfixinginthreepositionsoftherotatingopticalunitconsistingoftwopairsoflensesandaninclinedmirror,structurallybuilt-inatelescope.Inawidefieldtheviewiscarriedoutthroughaninclinedmirror,ontheaverageandnarrowfields-throughatelescope.Focusinginarangeoftemperatures-50…+50ismadebyamotionofthefirstlensofashortfocusobjectiveinawideFOVandamotionofthesecondlensofanobjectiveofatelescopeontheaverageandnarrowFOV.SpecialdesigneddigitalsignalprocessingunitisusedforsummationofsignalswithadelayforrealizationofTDImodeandcorrectionofFPAelementsensitivitynonuniformity.NonuniformitycorrectionisproducedbyusingoftwocalibrationlevelsofopticalsignalsformedbytwoadjustablesourcesbasedonPelletierelements.П08InjectionPhotodiodesV.I.Stafeev"Orion"RD&PCenter,Moscow,RussiaThenewclassofphotodetectorswithaninternalamplificationandahighphotosensitivityinintrinsic,impurity,farinfrared,andsubmillimeterabsorbingregions,namedtheinjectionphotodiodeswereofferedinpaper[1].Athighinjectionlevelsthenonequilibriumelectronsandholesconcentrationsareequalandmuchexceedtheequilibriumconcentration.Theydetermineabaseconductivity,inthecasewhenthebaselengthisinsometimesmorethenminoritycarrierdiffusionlength.Theincidentradiationincreasesthecarrierconcentrationandatthesametimereducesthebaseresistanceanditsvoltagedrop.Thiscoursesр-n-junctionvoltagerisingandthechargecarrierinjectionincreaseinthebasearea,thatreducesadditionallyitsresistance,intensifiescarrierinjectionandetc.Thepositivefeedbackprovidestheinjectionamplificationofaprimaryphotocurrent.Theirradiationfromimpurityspectrumareachangesimpuritylevelsfillingthatnotonlyleadtochangeofthenonequilibriumcarrierconcentration,butthechargecarrierredistributioninthebaseareaandthebaseconductivityconsequently.Bythefreecarriersabsorptionchangesthecarrier’senergyandmobility.Thephotosensitivityincreaseswiththegrowthofwavelengthuptosubmillimeterspectrumregion.Theseeffectsprovidebothbasicandadditional“parametritic”photocurrentamplificationininjectionphotodiodes.Themechanismofinjectionamplificationleadstoapproximatelyidenticalamplificationbothphotosignalandnoise,thatiswhytheinjectionphotodiodedetectivityD*isnotlessthanphotoresistorone.Theinjectionphotodiodesensitivitysharplyincreaseswiththegrowthofthecarryingcurrent.Theamplificationcoefficientcanachieve103-106values.Atsmallforwardcurrentsthephotosensitivityintheintrinsicabsorptionareaismuchmorethanintheimpurityabsorptionarea.However,athighcurrentstheimpurityphotosensitivitycanexceedintrinsicone[2].Incontrasttoordinaryphotodiodesthehighphotosensitivityisobservedonconditionsthattheradiationfallsfromtheр-n-junctionoppositeside[2].ImpuritiesdopedGe,Si,GaAsandnarrowbandsemiconductorsareusuallyusedforinfrareddetection.ForthefirsttimethehighphotosensitivityintheimpurityabsorptionareaisdiscoveredinGephotodiodesdopedAu[3].GaP,GaPxAs1-xandGaAs,ZnSchemicalsolutionsandotherswidebandsemiconductorsareusedintheultravioletregion.Theyhavephotosensitivityin200-900nmspectrumregion,andwidedynamicrangewithin10-12-10-2W/см2.GaAsdopedCrphotodiodesandinjectionphotodiodesonthebasisofGaAlAs-GaAsheterojunctionhavethebestperformance.Theirsensitivityachieves500A/W.Thresholdsensitivityat300Kisof10-14W.Hz-1/2,andat77Kisof10-15W.Hz-1/2.Themainadvantagesoftheinjectionphotodiodesaretheirmanufacturability,timestability,andreliability.Astheyoperateintheforwarddirection,andthemainp-n-junctiontaskconsistsinonlyminoritycarrierinjectioninthebasearea.V.I.Stafeev//FTS-v.1,N6,p841(1959).I.M.Viculin,Sh.D.Kurmashev,V.I.Stafeev.Opticaldetectorswithinjectionamplification.//Moscow:CSII“Electronics”(1989).A.A.Lebedev,V.I.Stafeev,V.M.Tuchkevich.//JTPh,v.XXVI,N10,p2131(1956).П09OrganicMaterialsandStructuresforPhotoelectronicsO.N.Ermakov,1M.G.Kaplunov,1O.N.Efimov,S.A.StackharnyJointStockCompany“Saphir”,Moscow,Russia*InstituteofProblemsofChemicalPhysicsofRAS,Chernogolovka,Moscowregion,RussiaAlongsidewithdisplayapplications[1]organicmaterialsandstructuresareofconsiderableinterestalsoforotheroptoelectronicapplicationsincludingphotoelectronics.Newhome–madeorganicmaterialsarebrieflyreviewedincludingDA-BuTAZ,Zn(OB–PDA),Zn(OBCG)2,Zn(OBBA),PTA.Dataarepresentedfortheiropticalpropertiesinthewidespectralrangeincludingopticalabsorptionandluminescencespectra.ItisnotedthatlargeStokesshiftisobservedbetweenabsorptionandluminescencebands.Two–layerdevicestructureshavebeenstudied.Dataarepresentedfortheircurrent–voltageandphotoelectriccharacteristics.IthasbeenestablishedthatsuchstructuresareUV–sensitivetheirsensitivityspectramaximabeingat~380nm.Comparisonbetweenorganicandinorganicphotodetectorsisgiven.Severaldifferencesareobservednamelypower–in-lawcurrent–voltagedependenceandessentialincreaseofphotosensitivitywithappliedvoltage.1.ErmakovO.N.Appliedoptoelectronics.Moscow.Technosfera.2004.П10BasicKinoform-and-AsphericalComponentsofGIPOforIRSpectralRegionV.V.Grushin,V.P.Ivanov,S.D.Kozlov,A.V.Lukin,S.N.Redkin,A.F.Skochilov"GIPO"RD&PCenter,Kazan,RussiaFormanyyearsFGUPNPOGIPOhasbeencarryingoutinvestigationsanddevelopmentsandmassproductionofdiffractionandasphericalopticalelementsandtheproductsontheirbasis.Highaccuracyofshapeformationofasphericalsurfacesoflensesandmirrorsmadeofopticalglass,fusedsilica,sitall,silicon,germanium,opticalceramicsandothermaterialsisensuredbythecreatedtechnologieswhicharebasedonusingspecialfull-sizedtoolsandlaser-and-holographiccontrolequipmentwherecomputer-generatedhologramsoperateeitherasreferenceopticalelementsorasopticalcompensators.Combinedapplicationofasphericalandkinoformсomponentsallowstocorrecteffectivelythemaintypesofaberrationsandmakesitpossibletoconstructobjectiveswithhighresolutionpowerinawidespectralregion.Atthesametimekinoformsenabletoreducesufficientlychromaticaberrationsandtodesignobjectivesusingonlyonetypeofthematerial.ThisfactisespeciallyimportantwhendevelopingIRobjectivesforspectralregionof3-5μmwheredispersionoftheusedopticalmaterials(germanium,silicon,opticalceramics)issignificantlyhigherthanthatinaregionof8-12μm.Kinoformstructurescanbemadedirectlyonasphericalsurfaceswhatallowsmaximalcompactnessoftheproductstobeachieved.ForthelastyearsGIPOhavedeveloped,manufacturedandusedforcompletingourownthermal–visionproductsaswellasfordeliveryforexportsofmorethanhundredIRobjectivesof15modelsincluding5models(about50pieces)forspectralregionof3-5μm.Thereportpresentstheprinciplesofgeneratingkinoformcorrectorsandoptimalimplementationofthemintocenteredopticalsystems.TheresultsoftestingvariousmodelsofIRobjectivesaregiven.П11HighSpeedGaInAsSb/GaAlAsSbandInAs/InAsSbPp-i-nPhotodiodesfortheSpectralRangeof2-4mYu.P.Yakovlev,I.A.AndreevIoffePhysical-TechnicalInstituteofAS,St-Petersburg,Russia194021,Politekhnicheskaya26,St-Petersburg,RussiaPhone:(812)2479956,Fax:(812)2470006Thespectralrange2.0-4.0μmisofinterestforproblemsoflaserdiodespectroscopyofgasesandmolecules,laserrangingsystems,medicalapplications,andproblemsofecologicalmonitoring.Highresolutionlaserdiodespectroscopyandlaserrange-findingwithsolidstatelasers(Ho:YAG(λ=2.06μm),Er:YAG:(λ=2.94μm)needhighspeedmid-irphotodiodes.Furthermore,afree-spaceopticallinkinthemid-irspectralrangeisverypromisingforhighfrequencycommunication.Photodetectorsshouldsimultaneouslysatisfysomeimportantrequirements:highefficiency,fastresponseandverylownoisewithintheworkingbandwidth.ProgressonMID-IRp-i–nphotodiodesbasedonGaInAsSb/AlGaAsSbandInAsSbP/InAsfabricatedbyLPEandMOCVDisreported.Resultsofinvestigationofhigh-speedandhigh-efficiencyGaSb/GaInAsSb/GaAlAsSb-basedphotodiodeswithspectralresponseintheregionof1.52.5μmareconsidered.Wereportthefabrication,withuseofliquid-phaseepitaxy,ofhighefficiencyphotodiodeswiththresholdwavelengthλth=2,4-2,55μmbasedontheGaSb/GaInAsSb/GaAlAsSbheterostructures.Thedistinguishingcharacteristicsofphotodiodeswithactivediameter0.075–2.8mmaredescribed.Themonochromaticcurrentsensitivityatthemaximumofthespectrum(2.1-2.3μm)wasSλ=1.0-1.2A/W,whichcorrespondstoaquantumefficiencyof0.6-0.7.Thereversedarkcurrentdensityisj=(1-3)10-3А/сm2forU=-(0.2-0.5)V.Thephotodiodeswithactivediameter0.075mmhaveatotalcapacityless1pFforU>1Vandbandwidthupto1.5-2.0GHz.ThesuperiorspeedofresponseachievedinGaInAsSb/GaAlAsSbphotodiodeswasashighas100-300ps.The(5-8)1010cmW-1Hz1/2valueofDetectivityofGaSb/GaInAsSb/GaAlAsSbheterostructurephotodiodeswasachievedatthemaximumspectralsensitivity.Themainparametersoffastandhigh-efficiencyInAs/InAsSbPphotodiodesgrownbyMOVPE(MetalorganicVaporPhaseEpitaxy)withInAsSbPwide-gaplayer(Phosphoruscontent(P50%))forthe2.0-3.6μmspectralrangewillbealsopresented.ThegrowthofPDstructurewasperformedataconventionalhorizontalflowreactionchamberatatmosphericpressure.Arsine,phosphine,trimethylindiumandtrimethylantimonidewereusedasthesourcecompounds.Hydridesweredilutedto20%inhydrogen.Growthtemperaturewas6000CforInAsаnd5200CforInAs0.27Sb0.23P0.50alloys,respectively.TheInAs/InAsSbPphotodiodeswerefabricatedbystandardphotolithographywithmesadiameterabout200-500μm.ThePDphotosensitivityS=1.6A/WatT=77KandS=1.4A/WatT=300K,respectively,wasobtained.ThedetectivityvariedfromD*=1.21011cmHz1/2W1atT=77KdowntoD*=109cmHz1/2W1atT=300K.У01256х256LWIRMCTFPAIntegratedwithMicrocryogenicSystemK.O.Boltar,I.D.Burlakov,N.I.Yakovleva,M.V.Derugin"Orion"RD&PCenter,Moscow,Russia256x256MCTLWIRFPAintegratedwithmicrocryogenicsystemhasbeendevelopedandinvestigated.According“RD&PCenterORION”technologyLWIRphotovoltaicFPAswiththeelementsizesof25х25mand30mpitchinbothdirectionshavebeenfabricatedinp-typeepitaxiallayers,grownbymolecular-beamepitaxy(MBE)onGaAssubstrates.N+-typeMCTphotodiodesarrayandsiliconN-MOSreadoutintegratedcircuit(ROIC)arebondedbyindiumbumpswithsizesof15х15m2andaheightof1215m.ROICperformsthephotocurrentsintegrationduringrowperiod;signalsaremultiplexingintwooutputchannelsfromlarge-areahigh-performanceFPAoperatingatcryogenictemperatures.ROICconsistsof256х256МОStransistorsarray,theintegrationcircuitcontaining256integrationcellsandtwooutputsourcefollowers,thecontrolcircuitcommutingbusesofМОStransistorsarray.Aphotosensitiveassemblyislocatedoncoolingfingerofmicrocryogenicsystemandcooleddowntotemperature80K.Microcryogenicsystempowerconsumptionislessthan10

Watnormalconditions.Importantinformationabout256x256LWIRMCTFPAperformanceswasobtainedfrominvestigationsofaverageNEPvalue.Theaveragenoiseequivalentpowerislessthan2,0.10-6W-2.forFPAwithcutoffwavelengthof0.5=11,2m.Crosstalkisnotexceedof3%.IRsystemonthebaseofFPAwasdevelopedtoobtainIRimagesinrealtimemodewithframefrequency50Hz.Thenonuniformitycorrectionwasperformedusingatwo-pointalgorithm.Noiseequivalenttemperaturedifferencewasobtainedusinganinfraredcamerabuiltat“RD&PCenterORION”,whichutilized256x256focalplanearrayTVoutputinterfacedtoacomputerviaframegrabbercard.NEDTatapertureratio1:1islessthen30mK.У02FocalPlaneArrayofaFormat256х256onBasisInSbwithFastResponseandBroadFunctionalCapabilitiesV.F.

Chishko1,I.L.

Kasatkin1,A.I.

Dirochka1,A.A.

Lopukhin1,D.V.

Borodin2,Yu.V.Osipov21"Orion"RD&PCenter,Moscow,Russia2RTK“IMPEX”,Moscow,RussiaThehybridversionfocalplanearrays(FPA)onaspectralrange3÷5μmonthebasisofindiumantimoniderequiresdevelopmentofsuchessentiallynewprocessingstepsasfa