Flipchip工藝流程演示文稿

Flipchip工藝流程演示文(Wen)稿第一頁，共三十三頁。優(yōu)選Flipchip工(Gong)藝流程第二頁，共三十三頁。1.Metalbump金屬凸塊-C4process(IBM)2.Tape-Automatedbonding捲帶接合-ACFprocess3.Anisotropicconductiveadhesives

異方向性導(dǎo)電膠(Mo)

-ACPprocess4.Polymerbump高分子凸塊-C4process5.Studbump.打線成球-ACPprocess(Matsushita)FlipChipconductivemethod-connecttoSubstrate/PCBC4:controlledcollapsechipconnectionACF:anisotropicconductivefilmACP(ACA):anisotropicconductiveAdhesivepasteKingbondTrainingCourse第三頁，共三十三頁。KingbondTrainingCourseVariousflipchiptechnologiesPS:WIT(Wireinterconnecttechnology)TAB(Tape-automatedbonding)第四頁，共三十三頁。KingbondTrainingCourseVariousflipchiptechnologies第五頁，共三十三頁。KingbondTrainingCourseStudBumpFlipChipBondUnderfillCureovenCureovenSBBProcess第六頁，共三十三頁。C4:ControlledCollapseChipConnectionProcessKingbondTrainingCourseReflowovenFlipchipbonderFluxcleanerUnderfilldispenserCureoven1.Fluxcoatingorre-printing2.MountingHeatingCleaningDispensingHeatingWaferbumpBumpbysolder第七頁，共三十三頁。ACP:AnisotropicConductivePasteProcessReflowovenFlipchipbonderUnderfilldispenserCureovenThermosettingDispensingHeating1.PrinttheACA2.AlignmentWaferbumpBumpbyAgKingbondTrainingCourse第八頁，共三十三頁。ACF:AnisotropicConductiveFilmProcessACFPre-setterFlipchipbonderPressandcureequipmentACFPre-setting1.Mounting2.Heating3.Press1.Heating2.PressWaferbumpBumpbyAuKingbondTrainingCourse第九頁，共三十三頁。Overcoatwithpolymideandopenthebumpareas.PatternwettablebasemetalCoatchipwithpolymide,openviasovereachpadUseddry-filmlift-offprocesstodefinebasemetalandsolderoneachpadPatternaluminumtore-routeI/OtoonareaarrayConventionalchipwithaluminumI/OpadsaroundtheperimeterTack,Flux&ReflowPrint,Place&ReflowKingbondTrainingCourse第十頁，共三十三頁。FCTBumpStructureSiliconwaferUBM-UnderBumpMetallurgySolderBumpFinalMetalPadDiePassivationWaferBumpKingbondTrainingCourse第十一頁，共三十三頁。1.蒸鍍Evaporation2.濺鍍Sputter3.電鍍Electroplating4.印刷Printedsolderpastebump5.錫球(Qiu)焊接SolderballbumpingorStudbumpbonding(SBB)6.無電鍍鎳ElectrolessnickeltechnologiesMetalbumpmethodUBMKingbondTrainingCourse第十二頁，共三十三頁。1.95Sn/5Pb,97Sn/3Pb高(Gao)溫錫鉛合金2.63Sn/37Pb低溫錫鉛合金3.Ni鎳4.Au金5.Cu銅MaterialofsolderbumpKingbondTrainingCourse第十三頁，共三十三頁。SiliconWaferarriveswithanaluminumbasedfinalmetalpadanddiepassivation.Wafercanbeprobedpriortobumping.Waferbump(Printedmethod)Process:WafercleanKingbondTrainingCourse第十四頁，共三十三頁。TheUnderBumpMetallurgyisaddedbyFCTthroughsputteredlayersofAl,Ni-V,&CuWaferBump(Printedmethod)Process:SputterUBMAl/Ni/Cu(Au)KingbondTrainingCourse第十五頁，共三十三頁。UBMconsist3layer:1.Adhesionlayer:Ti,Cr,TiW提供鋁墊(Alpad)與護(hù)層(Passivationlayer)有較強(qiáng)之黏著性2.Wettinglayer:Ni,Cu,Mo,Pt高溫迴焊時(shí)錫球可完(Wan)全沾附而成球3.Protectivelayer:Au保護(hù)Ni,Cu等免於被氧化.WaferBump(Evaporationmethod)Process:SputterUBMKingbondTrainingCourse第十六頁，共三十三頁。Applyphotoresist,PatternanddevelopWaferBump(Printedmethod)Process:Photo-resistKingbondTrainingCourse第十七頁，共三十三頁。EtchtoformUBMcapWaferBump(Printedmethod)Process:EtchUBMKingbondTrainingCourse第十八頁，共三十三頁。DepositsolderpasteandreflowtoformbumpWaferBump(Printedmethod)Process:Printsolderpaste&reflowSn/Pb63/37低(Di)溫95/5高溫KingbondTrainingCourse第十九頁，共三十三頁。Samplemeasurebumpheight,bumpshearandbumpresistance.WaferBump(Printedmethod)Process:InspectionKingbondTrainingCourse第二十頁，共三十三頁。1.Evaporativebumpsare125milsindiameterand100milshigh.2.Platedbumpsare125-175milsindiameterand25-100milshigh.Thetypicalsizeofabumpbeforereflow:KingbondTrainingCourse第二十一頁，共三十三頁。製(Xuan)程名稱:晶片背面黏貼Wafermounting生產(chǎn)設(shè)備:晶片背面黏貼機(jī)檢驗(yàn)設(shè)備:顯微鏡製程說明:將膠帶黏貼於晶片背面,避免晶片切割時(shí)分離.設(shè)備名稱:檢驗(yàn)重點(diǎn)項(xiàng)目:1.晶片方向Dieorientation2.氣泡Airbubble3.表面皺紋Wrinkle製程圖例:?？蚓琄ingbondTrainingCourse第二十二頁，共三十三頁。Process:InspectwaferKingbondTrainingCourse第二十三頁，共三十三頁。晶片(Pian)切割DieSaw生產(chǎn)設(shè)備:晶片切割機(jī)檢驗(yàn)設(shè)備:顯微鏡製程說明:依據(jù)晶粒尺寸大小,利用切割刀具,將晶片切割成單顆的晶粒.1.切割道寬度Streetwidth2.崩裂Crack製程圖例:晶粒晶片設(shè)備名稱:檢驗(yàn)重點(diǎn)項(xiàng)目:KingbondTrainingCourse第二十四頁，共三十三頁。上晶(Jing)片F(xiàn)lipChip生產(chǎn)設(shè)備:晶片上片機(jī)檢驗(yàn)設(shè)備:X-RAY影像觀測(cè)機(jī)製程說明:依據(jù)晶粒尺寸大小,利用上晶片機(jī)將單顆的晶粒,分別植入基板或模組.1.Bump定位與焊接情形2.晶片崩裂Crack,有無短路,斷路製程圖例:設(shè)備名稱:檢驗(yàn)重點(diǎn)項(xiàng)目:ChipBumpSubstrate/ModuleKingbondTrainingCourse第二十五頁，共三十三頁。上(Shang)晶片流程FlipChipflowPickupFlipPrecisionAddedFluxBonding/Reflow基板/模組C4processKingbondTrainingCourse第二十六頁，共三十三頁。上晶(Jing)片流程FlipChipflowPickupFlipPrecisionAddedfilm/pasteBondingwithheating基板/模組ACF&ACPKingbondTrainingCourse第二十七頁，共三十三頁。填(Tian)膠Under-fill設(shè)備名稱:生產(chǎn)設(shè)備:填膠機(jī)檢驗(yàn)設(shè)備:X-RAY影像觀測(cè)機(jī)製程說明:利用填膠機(jī)將已完成植入基板或模組之每單顆的晶粒,分別以填膠注入.1.有無球脫或晶圓偏移製程圖例:檢驗(yàn)重點(diǎn)項(xiàng)目:KingbondTrainingCourse第二十八頁，共三十三頁。

WhydoyouneedtounderfillSolderjointreliabilityforflipchipsisbasedonseveralfactors:1.Bumpalloytype2.Solderjointheight(standoff)3.DistancetoneutralpointorDNP.(Ameasurementofthecenterofmassofthedietothefarthestbumponthedie,typicallythecornerbump.)KingbondTrainingCourse第二十九頁，共三十三頁。填(Tian)膠製程Under-fill1.毛細(xì)作用型Capillarytype):利用毛細(xì)力造成膠材之流動(dòng).2.異方向?qū)щ娔z(Anisotropicconductiveadhesive):低溫製程,分膏狀(paste)和膜狀(film)3.前置型(Pre-appliedtype):小尺寸晶片(<6mm),點(diǎn)膠(Dieattachment)後再迴焊(Reflow)Kingbond