各測(cè)試參數(shù)定義

MOSFETDivisionTechnicalTraining7thApril2005

MOSFETBasicInformationMainElectricalParametersProduction(Assy&Testing)FlowChartDevelopmentandCharacterizationActivitiesDatasheetReliability..AGENDA

MOSFETTechnicalTraining

DeviceStructure&Characteristics

Vertically

oriented

fourlayerstructure(n+

pn-n+)Highinputimpedance-

voltage

controlled

device-easytodrive

Unipolar

device-majoritycarrier

device-fastswitching

speed

WideSOAN++PP+N-N+MetalDielettricPolysiliconGateOxideZoomonMOSFETStructureDGSSGDMOSPINindividuationontheStructureN-P+N+SGDMOSParassiticElements:BodyDiodeN-P+DGSN-P+N+N-P+N+SGDGDSMOSParassiticElements:BJTN-P+N+SGDMOSParassiticElements:C,RpDCRpSGN-P+N+SGDMOSParassiticElements:JFETGDSCRpMOSFETBasicOperationGS++-VGS

<VThVDS>0ID

=00102030010203040ID[A]102030040VDS[V]102030MOSFETBasicOperation+GSD++-VGS

VThVDS>0ID

00102030010203040ID[A]102030040VDS[V]102030N+NPinversionlayerMOSFETBasicOperationGSD++-VGS>VThVDS>0ID>00102030010203040ID[A]102030040VDS[V]102030IncreasingVGOnstateresistanceRONMOSFETBasicOperationBVDSS[V]10100100010000RONAREA[mWcm2]1001100.11000MOSFET’sCapacitancesDGSCdsCgsCgdCiss=CGD+CGS Coss=CDS+CGDCrss=CGD

InputCapacitanceOutputCapacitanceMillerCapacitanceNote:Normallywedon’tmeasuretheseparametersinproduction.WecharacterizeandguaranteesbyF/Eprocess.LowBreakdownvalues: 12V–1000V

LowRdsonvalues: Till1.5mΩ

Highcurrent: Till250A/160A

LowDrivingGateVoltage: Till2.5V..1.8V

MainMOSFETFeaturesP/NNomenclatureforMOSFETDevicesSTP70NF03LaC=TSSOP8T=SOT23-6LN=SOT-223L=PowerFLATSJ=PowerSO-8SR=PowerSO-8ReverseS=SO-8D…T4=DPAK(Tape&Reel)B…T4=D2PAK(Tape&Reel)V=PowerSO-10Q=TO-92D…-1=IPAKB…-1=I2PAKP=TO-220P…FP=TO-220FPF=TO-220FPfornewproductsW=TO-247Y=Max247E=ISOTOPPackageTYPEIndicativeCurrentRangeChannelPolarityE=EHD1(STripFET1stgeneration)F=EHD2(STripFET2ndgeneration)H

=EHD3(STripFET

3rdgeneration)FS=EHD2+SchottkyDiodeS=PowerMESHMediumVoltB=PowerMESHIC=PowerMESHIIC…Z=PowerMESHIIIK…Z=SuperMESHM=MDmeshM…N=MDmeshIISpecialFeaturesN=N-ChannelP=P-ChannelDNorDP=Dual

N-ChorDual

P-ChC=Complementray

Pairwiththeexceptionof:55Vand75VTSSOP8,SOT23-6L,SO-8HighVoltageMOSFETSuperMesh-New“NK-Z”SeriesHighvolumemarkets(costcompetitiveness)EvenbetterRdson*QgandverygoodruggednessMDmesh-“NM”SeriesHigh-EndapplicationsEvolvingas“future”highvoltageleadingtechnologyMainFocusPowerMESHII–“NC”SeriesCompetitivestandardMOSFETsCosteffectiveHighvolumeproductionPowerMESHIII–“NC-Z”SeriesVeryhighvoltagemarketZENERDiode:addedvalueatnocostsLowVoltageMOSFETTechnologyFromcelltostrip(EHDtechnology–1996)Stripwidth(2.6umEHD1

1.2umEHD20.6umEHD3)CellsdensityequivalentincreaseVerylowgatecharge(newSP3technology)MacropackagesoptimizationforverylowRdson/RthMicropackagesoptimizationforverylowRdson/RthMainapplicationstofocusSMPS:ACtoDC,PFC,Adapters

PowerManagement(includingthoseforelectronicgames)

Lighting:CFL,HFBallast,PFC

HighfrequencyDCtoDCConverterforcomputer

BatteryChargersAutomotiveMOSFETBasicInformationMainElectricalParametersProduction(Assy&Testing)FlowChartDevelopmentandCharacterizationActivitiesDatasheetReliability..AGENDA

MOSFETTechnicalTraining

MainElectricalParametersBVdss BreakdownVoltageVGS(th) ThresholdVoltageIgss GateSourceleakageCurrentIdss DrainSourceleakageCurrentVDSon DrainSourceOnVoltageRDSon DrainSourceOnResistenceVsd ReverseDiodeVoltageDVSD DeltaVsdUIS UnclampedInductiveSwitchingUID UnclampedInductiveDischargeDrain-SourceBreakdownVoltage: BVDSS[V]

Measurementconditions: Vgs=0[V],Id=250[mA]/Id=1[mA]

Note:

ThisparameterisafunctionoftheresistivityandthicknessoftheN-Epilayer.ThevalueisdirectlyproportionaltoJunctionTemperatureasshownafter.Drain-SourceBreakdownVoltage[BVdss]DGSVdsIdId2=1mAId1=250mA12BV2>BV1IdsGateThresholdVoltage:

VGS(th)[V]

Measurementconditions:

Vgd=0[V],Id=250[mA]/Id=1[mA]

Note:

Thisparametermeasurestheminimumgatevoltagethatinitiatesdraincurrentflow.Thetemperaturecoefficientinthiscaseisnegativeasshown.ThresholdVoltage[Vgs(th)]DGSIdStandardLogic (2V–4V)

Oxidethickness =470Angs/HighBodydoping

Drivingdownto Vgs=10V Rdson@10V&Inom/2

Examples: TDxx/EDxx/3DxxlinesLogicLevel (1V–2.5V)

Oxidethickness =470Angs/LowBodydoping

Drivingdownto Vgs=5V Rdson@5V&Inom/2

Examples:

TLxx/ELxx/3LxxlinesLogicLevel (1V–2V)Oxidethickness =350Angs/LowBodydopingDrivingdownto Vgs=4.5VRdson@4.5V&Inom/2Examples:

FLxx/T3xx/E3xx/33xx/43xxlinesSuperLogicLevel (>0.6V)

Oxidethickness =200Ang/LowBodydopingDrivingdownto

Vgs=2.5V Rdson@2.5V&Inom/2Examples:

TVxx/PVxx/3VxxVgs(th)forLVMOSFETsGateSourceLeakageCurrent:

IGSS[nA]

Measurementconditions:

Vgs=[seetable] Vds=0[V]

Gate-SourceLeakageCurrent[IGSS]DGSNote:

ThisparametermeasuresleakagecurrentflowingtroughoxidewhenthereisaVgsapplied.Thetypicalreadvalueis<100nAOx.Thic.DevicesVgs[V]200AngsNH10to12350AngsNE/NF/NH15to18470AngsNE/NF/NS/PP/SP20to22620AngsNS22to24>850AngsNB/NC/NK/NM30Drain-SourceLeakageCurrent: IDSS[μA]

Measurementconditions: Vgs=0[V],Vds=Nom.BVdss[V]

Note:

ThisparametermeasurestheleakagecurrentflowinginthebodydiodewhenthedeviceisnotturnedON(Vgs=0[V]).DrainSourceLeakageCurrent[IDSS]DGSVdsIdNom.BVdssIdssDrain-SourceONVoltage: VDSON[V]/RDSON[Ω]

Measurementconditions: Vgs=10V/5.0V/4.5V/2.5V Id=Id(nominal)/2

Note:

>>IncreasingtheVgsdrivingtheMOSFETtheRdsondecreases.(Vgs2>Vgs1=>Rdson2<Rdson1)>>IncreasingVgsoveravaluedoesnothaveanygoodimprovementversusRdson.>>WiththesameVdsontheMOSFETcandrivedifferentcurrentvalueapplyingdiffentVgs.(Blueline)DrainSourceOnVoltage[V?DSON]Id(nominal)/2DGS12Idon1Idon2Vgs1Vgs2Vgs3DrainSourceOnVoltage[V?DSON]

-behaviourvsInom/Temp-

RDS(on)=VDS(on)/Id(on)Rds(on)increaseswiththecurrentandalsowiththetemperatureDrain-SourceonResistance:RDS(on)RDS(on)=Rsource+Rch+RA+RJ+RD+Rsub+Rwcml

Rsource=Sourcediffusionresistance Rch=Channelresistance RA=Accumulationresistance

RJ=JFETcomponentresistanceofthe regionbetweentheP-bodies.

RD=Driftregionresistance

Rsub=

Substrateresistance

Rwcml=Sumofbondwireresistance,thecontactresistancebetweenthesourceand drainmetallizzationandthesilicon,leadframecontribution.RDS(on)increaseswiththetemperature.DrainSourceOnVoltage[V?DSON]

-components-RDS(on)=VDS(on)/Id(on)SourceleadSourcemetalRC(Wire/Front)R(Wire)RC(Wire/Frame)SiliconDrainDrainSourceOnVoltage[V?DSON]

-Packagecontribution-RC(Wire/Front)=0.9

mW

(AlwiresonAlfrontmetal)R(wire)=1.2/2.8mW

(Alwires,15/10mils

diameter,5mmlenght)RC(Wire/Frame)=1.2

mW

(AlwiresonCuorNi

frame)

Epitaxy

Packaging

MetallizationSource

JfetChannel

SubstrateVoltageRating55V100V500V30VRdsonComponentsDrainSourceOnVoltage[V?DSON]

-RdsonvsVoltageRatingdevices-Drain-SourceDiode

fowardVoltage: VSD

Measurementconditions: Vgs=0[V],Id=InominaleNote:

ThevalueisdirectlyproportionaltoJunctionTemperature.ReverseDiodeVoltage[VSD]DGSIsdVsdIsdInom/2Vf(diode)IMPROVEMENTSPackageimprovementLowerdiethickness(410μm280μm220μm200μm)THERMALCHARACTERISTICSPTOT=DT/RTHJ-C=(Tjmax-Tc)/RTHJ-CRththermalperformance(diesize,package)I=(TJMAX-TC)/RON(@TJMAX)/RTHJ-CPTOT=RON(@Tjmax)*I2PTOT=(Tjmax-TC)/RTHJ-CPOWERHIGHCURRENTLIMITSWirebondinglimitationIMAX=Nr.of.Wires*IMAX(Wire)Dim.Inom.I(Burnout)1030A35A1540A70AIMPROVEMENTSLargeT-Posttobondupto4x15milswires(Imax=160A)Clipattachtohavethemaximumofareaforcurrent.WIRESHIGHCURRENTLIMITSRthj-cisfunctionofdiesize.

BiggeristhedieLowerisRthj-cThermalresistance1/3Parameterwhichindicateshow"easily"theheatflowsbetweentwopoints.SmallRTHimpliesthattheheatistransferredfromthetwopointswithlittletemperaturedifference,whilelargeRTHrequiresagreatertemperaturedifference.InelectronicdevicesthetwomostimportanttemperaturesaretheambienttemperatureTAandthetemperaturereachedbythejunctionTJ.TheRTHJ-A(device)dependsbyframedimensionandframematerial.TheRTHJ-A(module)dependsbythedevice,insulation,mountingmethod,heat-sinksizeandcoolingmethod(forcedair,radiation,....).RTHB-A=(TB-TA)/PDThermalchainexistsfromthesilicontotheambientthroughthedieattach,theframe,thecontactandtheexternaldissipator

RTHj-a=RTHj-c+RTHc-s+RTHs-aThermalmodelfortransienttakesintoaccountalsothethermalcapacitances.Thermalresistance2/3Thermalresistance3/3PowerpulseTemperatureincreasePowerMOS

DT=RTHxPowerThepowerlossofthedevice

turns

into

heatandincreasesthejunctiontemperature.DuringtheProductCharacterizationisperformedtheRthdistributionstofixthevaluetoinsertinofficialdocument.InthesametimetheDVSDtestconditionsandlimitsarefixedtoscreeneventualassy(dieattach)problempotentiallyincreasingRth(preformthickness/voids)TheDVSDtestisperformedtoguaranteetheProductperformancesintermsof:PowerDissipationcapability(Rth/Zth)andThermaldissipation.TheTestConditionsandvaluesarenotdirectlylinkedwiththeRthdistributionsconsideringthedifferencesbetweenthetwotestperformed.RthParameterCharacterizationOnGOODPartsRthmaxforDatasheetDVSDCharacterizationOnGOODPartsToFIX:ConditionsandLimitsConditionsandLimitsSamePartsDieAttachVerification[DVSD]DieAttachVerification[DVSD]Vf1

atISD

is

readApowepulseis

applied

atprefixedpulsetimeWaitforadelayVf2

is

readinthesameconditionthan1Vf2-Vf2arecomputedandcompared

withtestlimitVf1PowerpulseTcalTesttime(Pt)Tdelay(Dt)TcalVf2Example:

DVf/°C=2.1mV/°C(Law).

IfDVf=130mVthenDT=62°CIncaseofdieattachproblem,DVf=willbemuchhigherDSVfUnclampedInductiveSwitching[UIS]E=1/2*L*I2*(V(BR)eff/(V(BR)eff-VDD))E=1/2*V(br)eff*Io*tavVgateTurnOff

Mode1HighCurrentassociatedtoelevateddv/dtofVDScausingactivationofparasiticbipolartransistorMode2ThermaldissipationwithTjexceedingpermissibleTjmax(175°CLowVoltage/150°CMedium/HighVoltage)UnclampedInductiveSwitching[UIS]

-FailureModesinAvanlanche-Failureoccursatturn-off(whenVdsreachesbreakdown)FailuremechanismrelatedtoSiliconLayoutandProcessFailuredependentondVDS/dt,thereforeonRgoffFailurenotdependentonLEasnotsignificant(fewmJ)

ParasiticBJTTurn-on(Mode1)ThecurrentstartsflowingintothePregioncausingavoltagedropacrossRpandforwardbiasingtheBEjunctionofparasiticBJT;VBEondecreasingwithtemperatureinconjunctionwiththegain

oftheBJTwillleadittobeturned-on,withveryhighcurrentcrowdingandconsequentlocaltemperatureincreaseuptotherunawayandthedevicefailureFailureoccursduringinductivedischargewithDUTinavalancheanditsTjincreasing(startingfrom25°C)Tjcriticalis230°Cto330°C(dependentonP/N)EasisafunctionofArea/Power/DeltaTjEas=K*Area1.6*DeltaTj/PDUTruggednessischaracterizedduringProductDevelopmentDependentonSiliconandPackagingGuaranteedEasisrelatedtoTj=Tjmax=175°CCriticalEas“controlled”byTesting(Rdson/Vf/DeltaVsd)TjexceedingTjmax(Mode2)U.I.S.WAVEFORMSContinuuslinerepresentsanofailingdeviceduringUISThedottedoneisafailureforEnergy(EAS)TestCircuitforStandardU.I.S.D.U.T.LoadVddVggRgONRgOFF

theDUTisONandafterVgsturn-off,duetoadelayintheGatecapacitancesdischarge,theChannelsarenotimmediatelyclosed,soIdsisstillflowingforawhileasbeforeandwithoutdiscontinuity,andthenstilldistributedamongallthetransistorstrips.RgONRgOFFVggVddLoadD.U.T.TestCircuitforU.I.Discharge

theDUTisOFFwithVgs=0,andthenthecurrentdischargeofthecoilissuddenlycrowdedtoasmallareaofthechipwheretheparasiticBJTisturned-on.MOSFETBasicInformationMainElectricalParametersProduction(Assy&Testing)FlowChartDevelopmentandCharacterizationActivitiesDatasheetReliability..AGENDA

MOSFETTechnicalTraining

PRODUCTIONFLOWCHARTShipmenttoBackEnd(Casa/Shz/Subcon)Assemble(WS/DA/WB/MOLD/…)ShipmenttostoreWaferDiffusionEPIGrowth(CT6/AMK5/6)EWSFinalTestingASSEMBLEFLOWCHART

BEPlants(Casablanca/Shenzhen)SawingDieattachWirebondingMoldingASSEMBLEFLOWCHART

BEPlants(Casablanca/Shenzhen)DeflashingCuringPack.CroppingTO220TinDippingTinPlatingCroppingDPAK,D2PAKTESTTESTINGFLOWCHART

ParametersTestedat100%inproductionLV

LaserMarkingHVDSFBLVLOADTestsIGSSIDSSBVDSSTestsVGSthVDSONVSDTestDVSDTestU.I.S.BIN6BIN5BIN4BIN3BIN2BIN1OUTPUTTestsIGSSIDSSBVDSSTestsVGSthVDSONVSDHVBINTESTBINCATEGORY12GOOD24PARAM.REJECT35RETEST46MARKING57DVSD,UIS,M.I.68OTHERSMOSFETBasicInformationMainElectricalParametersProduction(Assy&Testing)FlowChartDevelopmentandCharacterizationActivitiesDatasheetReliability..AGENDA

MOSFETTechnicalTraining

TargetdefinitionwithMarketingandDesign(diffusionandassyapproval) TargetdatasheetEWS/Assy/T&FspecificationsFirstdiffusionlotEWSevaluationWafersshipmenttoplantsand/orsubcontractors(engineeringtrialrequests)Assy&TestingYield+parametricevaluationofplantdataStaticcharacterization(vstemperature)ontheassembledpartsPreliminarydatasheetDynamiccharacterization&ReliabilityThermalcharacterization(fornewpackages/diesizes)Development&CharacterizationReportandcompletedatasheetIssueDevelopment&CharacterizationActivity

MOSFETBasicInformationMainElectricalParametersProduction(Assy&Testing)FlowChartDevelopmentandCharacterizationActivitiesDatasheetReliability..AGENDA

MOSFETTechnicalTraining

ExceedingVgsmayresultinpermanentdevicedegradationduetooxidebreakdownanddielectricrupture.Therealoxidebreakdowncapabilityishigherthanthisvalue,andisrelatedtotheoxidethickness;butthisvalue,withareasonableguardband,isthe100%TESTED&warrantedone

Tjmustbealwayslowerthan150oCReflectsaminimumdeviceservicelifetime.OperationatconditionsthatguaranteeajunctiontemperaturelessthanTjmaxmayenhancelongtermoperatinglife.

Ptot=dT/Rthjc=(150-25)/Rthjcderating=1/RthjcThemajorityofreliabilitytestsaredoneatmaximumjunctiontemperature,especiallytheHTRB(HighTemperatureReversedBias)andHTFB(HighTemperatureForwardBias).Thesetestresultsareusedasinputinformationforcalculationofaccelerationfactorsindifferentreliabilitymodels.Inordertoachievehighforecastedreliabilitythemaximumoperatingtemperatureshouldbelowerthanthemaximumone.Forexample,bytheoreticalmodels,reducingthejunctiontemperatureby30°CwillimprovetheMTBF(MeanTimeBetweenFailure)oftheMOSFETbyanorderofmagnitude.Ptot=Ron(@Tjmax)*I2Ptot=(Tjmax-Tc)/RTHj-cI=(Tjmax-Tc)/Ron(@Tjmax)/RthjcLimitedalsobywiresize:toavoidanyfuseeffectLimitedbyPtot&RdsonMaximumdv/dtcapabilityduringdiodereverserecovery(dynamicdv/dt)Tobedistinguishedtwokindofdv/dt(staticanddynamic)Iftheparasiticbipolartransistoristurnedon,thebreakdownvoltageofthedeviceisreducedfromBVCBOtoBVCEOwhichis50~60[%]ofBVCBO.IftheapplieddrainvoltageislargerthanBVCEO,thedevicewillbebroughtintotheavalanchebreakdown,andifthedraincurrentcannotbelimitedexternally,thedevicecouldbedestroyedbythesecondbreakdownofparasitic

bipolar.Duetothefalseturn-on,thedevicefallsintothecurrentconductionstate,andinseverecases,highpowerdissipationdevelopsinthedeviceandcreatesdestructivefailure.Staticdv/dta)Falseturnonb)ParasitictransistorturnonThevalueofdi/dtanddv/dtbecomeslargerasRgisreduced.Dioderecoverydv/dtThedeviceisdestroyedbythesimultaneousstressessuchashighdraincurrent,highdrainsourcevoltageandthedisplacementcurrentoftheparasiticcapacitance.HighestStresspointSTinsulatedpackagesaretested100%toguaranteethisvalue.Thermalchainexistsfromthesilicontotheambientthroughthedieattach,theframe,thecontactandtheexternaldissipator.RTHj-a=RTHj-c+RTHc-s+RTHs-aThermalmodelfortransienttakesintoaccountthermalcapacitancesThermalresistanceRthjc=1/0.32=3.1K/WV=Ron(@Tj)*IK=0.1Zth=kRthVI=(Tj-Tc)/ZthK=0.04K=0.01K=1AllowedbutnotreachableregionIar,definedasthemaximumcurrentthatcanflowthroughthedeviceduringtheavalancheoperationswithoutanybipolarlatchingphenomenon.EAS(EnergyduringAvalancheforSinglePulse)isdefinedasthemaximumenergythatcanbedissipatedinthedeviceduringasingleavalancheoperation,attheIarandatthestartingjunctiontemperatureof25°C,tobringthejunctiontemperatureuptothemaximumonestatedintheabsolutemaximumratings.DSGTracerwaveformAsjunctiontemperatureincreases,BValsoincreaseslinearly,DSGIDSSissensitivetothetemperatureandithaspositivetemperaturecoefficient.DSGDSGThresholdvoltageVGS(th)istheminimumgatevoltagethatinitiatesdraincurrentflow.VGS(th)hasanegativetemperaturecoefficientDSGRDS(on)hasapositivetemperaturecoefficientRDS(on)isnotconstantvsIdDSGGfs=didsdvgsVds=constTGDSCGSCDSCGDCiss=CGD+CGSCoss=CDS+CGDCrss=CGD

TemperaturevariationshaveverylittleeffectResistiveloadswitchingVDVG=0ID=0IDS[A]VDS[V]500432100143256Resistiveloadswitching1VDVG=0ID~0VG=VTh500432100143256ChargingtheCisstoVth.Noevidentdraincurrentflows;VdsremainsessentiallyatVddVDS[V]IDS[A]Resistiveloadswitching12VDVG=0ID=0VT500432100143256ContinuestheCissCharging.Draincurrentstartstoflow;VdsremainsessentiallyatVddVDS[V]IDS[A]Resistiveloadswitching12VDVG=0ID=0VG=VGmVT500432100143256ContinuestheCissCharging.Draincurrentflowstothemaximum;VdsremainsessentiallyatVddVDS[V]IDS[A]ResistiveloadswitchingVG=0124VDID=0VG=VGmVT500432100143256CgdisChargingandCissincreasesmantainingVgflat.IdconstantVdsapproachestoVdson

VDS[V]IDS[A]Resistiveloadswitching124VDVG=0ID=0VT500432100143256MOSFETinohmicregion.VgincreasestoappliedvoltagecharginginputcapacitancesVDS[V]IDS[A]ResistiveloadswitchingVG=0124VDID=0VT500432100143256VDS[V]IDS[A]ResistiveloadswitchingVG=0124VDID=0VT500432100143256VDS[V]IDS[A]Resistiveloadswitching10VItisusedtodeterminetheamountofcharge,definedasQg,requiredtobringtheCissfrom0Vto10VDSGISDIrrm

Qrr~0.5

trr*IrrmMOSFETBasicInformationMainElectricalParametersProduction(Assy&Testing)FlowChartDevelopmentandCharacterizationActivitiesDatasheetReliability..AGENDA

MOSFETTechnicalTraining

ReliabilityTestsDieorientedtestsHightemperaturereversebias(HTRB)Hightemperature

forward

bias(HTFB)Hightemperature

storage(HTS)PackageorientedtestsThermalfatigueTemperature

humidity

bias(THB)PressurePotThermalcyclesEnvironmental

sequenceReliabilitytestshavetobepassed

beforenewproductsareapprovedThistestisperformedinordertodemonstratethereliabilityofdevicessubjectedtoanelevatedtemperatureandsimultaneouslyreversebiased.Detectablefailuremechanismarebreakdowndegradation,leakageincrease.SensitiveparametersareBvdss,Idss,IgssTestconditions:Vbias=0.8VmaxT=150°Ccheckpoint168hr,500hr,1000hrR=1KOhm