微電子專業(yè)外語6

1、專業(yè)外語,姓名：陳軍寧 藺智挺 時間：二一三年五 月,Basic MOS Device Physics,To account for channel-length modulation, we assume L is constant, but multiply the right hand side of MOS current equation by a corrective term: 注意： account, corrective,Design of Analog COMS Integrated Circuit,account, corrective,account n.賬，賬目；存款

2、；記述，報告；理由 vi.解釋；導致；報賬 account for 說明解釋原因 corrective adj.矯正的；懲治的 n.矯正物；改善法；補救藥,Design of Analog COMS Integrated Circuit,Basic MOS Device Physics,where is called the “channel-length modulation coefficient.” While only an approximation, this linear dependence of ID upon VDS still provides a great deal

3、of insight into the circuit design implications of channel-length modulation. 注意： insight into, implication,Design of Analog COMS Integrated Circuit,insight into, implication,insight into 洞察 implication n.含義；含蓄，含意，言外之意；卷入，牽連，牽涉，糾纏；邏輯學蘊涵，蘊含,Design of Analog COMS Integrated Circuit,Basic MOS Device Ph

4、ysics,Unlike the early effect in bipolar devices, the amount of channel-length modulation is under the circuit designers control. 注意： the amount of,Design of Analog COMS Integrated Circuit,the amount of,the amount of / the number of 表示某樣東西的數(shù)量， 前者修飾不可數(shù)名詞，后者修飾可數(shù)名詞,Design of Analog COMS Integrated Circ

5、uit,Basic MOS Device Physics,This is because is inversely proportional to L: for a longer channel, the relative change in L (and hence in ID) for a given change in VDS is smaller.,Design of Analog COMS Integrated Circuit,Basic MOS Device Physics,Body Effect In the analysis of Fig. 2.10, we tacitly a

6、ssumed that the bulk and the source of the transistor were tied to ground. 注意： tacitly,Design of Analog COMS Integrated Circuit,tacitly,tacit 英 tst 美 tst adj. 緘默的； 心照不宣的； 由法律的效力而產(chǎn)生的,Design of Analog COMS Integrated Circuit,Basic MOS Device Physics,What happens if the bulk voltage of an NFET drops be

7、low the source voltage (Fig. 2.21)?,Design of Analog COMS Integrated Circuit,Basic MOS Device Physics,Since the S and D junctions remain reverse-biased, we surmise that the device continues to operate properly but certain characteristics may change. 注意： surmise,Design of Analog COMS Integrated Circu

8、it,surmise,英 smaz 美 smaz n. 推測，猜測 vt. 臆測，推斷； 揣測 vi. 猜想,Design of Analog COMS Integrated Circuit,Basic MOS Device Physics,To understand the effect, suppose Vs = VD = 0, and VG is somewhat less than Vth so that a depletion region is formed under the gate but no inversion layer exists. 注意： suppose,Desi

9、gn of Analog COMS Integrated Circuit,suppose,1.suppose后接that引導的賓語從句，that可以省略，如： I suppose well go there next week. 2. suppose+名詞/代詞+名詞（賓語補足語），如： I never supposed him a hero. 3.suppose+名詞/代詞+不定式，如： I supposed her to have already left for home.,Design of Analog COMS Integrated Circuit,Basic MOS Device

10、 Physics,As VB becomes more negative, more holes are attracted to the substrate connection, leaving a larger negative charge behind, i.e., as depicted in Fig. 2.22, the depletion region becomes wider.,Design of Analog COMS Integrated Circuit,Basic MOS Device Physics,Now recall from Eq. (2.1) that th

11、e threshold voltage is a function of the total charge in the depletion region because the gate charge must mirror Qd before an inversion layer is formed.,Design of Analog COMS Integrated Circuit,Basic MOS Device Physics,Thus, as VB drops and Qd increases, VTH also increases. This is called the body

12、effect or the backgate effect. It can be proved that with bodyeffect:,Design of Analog COMS Integrated Circuit,Basic MOS Device Physics,Thus, as VB drops and Qd increases, VTH also increases. This is called the body effect or the backgate effect. It can be proved that with bodyeffect:,Design of Anal

13、og COMS Integrated Circuit,Basic MOS Device Physics,For body effect to manifest itself, the bulk potential, Vsub, need not change: if the source voltage varies with respect to Vsub, the same phenomenon occurs. 注意： manifest,Design of Analog COMS Integrated Circuit,manifest,manifest 英 mnifest 美 mnfst

14、vt. 顯示，表明； 證明； 使顯現(xiàn) adj. 明白的， 明顯的 n. 貨單，旅客名單,Design of Analog COMS Integrated Circuit,Basic MOS Device Physics,For example, consider the circuit in Fig. 2.24(a), first ignoring body effect. We note that as Vin varies, Vout closely follows the input because the drain current remains equal to I1. 注意： i

15、gnore,Design of Analog COMS Integrated Circuit,ignore,overlook一般比較口語化，常用語表示忽視或忽略而造成錯誤 ignore 有故意忽視的意思，有主觀色彩 neglect，常常表示因遺忘而忽略，比較客觀時用 disregard 更傾向于因不尊重而忽視，從詞跟regard前接否定前綴dis就能看出來 omit 多用于省略的意思，被省略，忽略的一般是不重要或不必要的部分,Design of Analog COMS Integrated Circuit,Basic MOS Device Physics,In fact, we can wri

16、te (2.25) concluding that Vin - Vout is constant if l, is constant Fig. 2.24(b). 注意: constant,Design of Analog COMS Integrated Circuit,constant,continual： 強調(diào)重復(fù)或持續(xù)發(fā)生，但連續(xù)之間允許有間斷。 continuous： 語意最強，強調(diào)在時間和空間上沒有間斷。 successive： 強調(diào)事物一個接一個地發(fā)生，無間斷。 constant： 多指習慣性的重復(fù)和不變的持續(xù)。 persistent： 普通用詞，可指不懈的努力，也可指任何連續(xù)不斷或

17、重復(fù)出現(xiàn)的事物。,Design of Analog COMS Integrated Circuit,Basic MOS Device Physics,Now suppose the substrate is tied to ground and body effect is significant. 注意: significant,Design of Analog COMS Integrated Circuit,Basic MOS Device Physics,Then, as Vin and hence Vout become more positive, the potential dif

18、ference between the source and the bulk increases, raising the value of VTH.,Design of Analog COMS Integrated Circuit,Basic MOS Device Physics,Eq. (2.25) therefore implies that Vin - Vout must increase so as to maintain ID constant Fig. 2.24(c). 注意: maintain,Design of Analog COMS Integrated Circuit,

19、maintain,Sports can enrich your life and _ your physical fitness. A. sustain B. contain C. maintain D. retain C,Design of Analog COMS Integrated Circuit,maintain,1) sustain -keep sb./sth.alive or in existence（支持、維持生命）, to keep up the strength, spirits or determination of （維持體力/精神/決心） eg: The supplie

20、s of food were scarcely enough to sustain life.食品的供應(yīng)僅夠勉強維持生命. 2)retain 保留 eg: This village still retains its old world character.這個村莊仍然保持著古色古鄉(xiāng)特色,Design of Analog COMS Integrated Circuit,Basic MOS Device Physics,Body effect is usually undesirable. The change in the threshold voltage, e.g., as in Fig.

21、 2.24(a), often complicates the design of analog (and even digital) circuits. 雙阱,Design of Analog COMS Integrated Circuit,Basic MOS Device Physics,Device technologists balance Nsub and Cox to obtain a reasonable value for . 注意: balance,Design of Analog COMS Integrated Circuit,Basic MOS Device Physic

22、s,Subthreshold Conduction In our analysis of the MOSFET, we have assumed that the device turns off abruptly as VGS drops below VTH.,Design of Analog COMS Integrated Circuit,Basic MOS Device Physics,In reality, for VGSVTH, a weak inversion layer still exists and some current flows from D to S.,Design

23、 of Analog COMS Integrated Circuit,Basic MOS Device Physics,Even for VGS VTH , ID is finite, but it exhibits an exponential dependence on VGS . 注意: finite,Design of Analog COMS Integrated Circuit,Basic MOS Device Physics,Called subthreshold conduction, this effect can be formulated for VDS greater t

24、han roughly 200 mV as 注意: formulate,Design of Analog COMS Integrated Circuit,Basic MOS Device Physics,Where 1 is a nonideality factor and VT = kT/q. We also say the device operates in week inversion. 注意: nonideality,Design of Analog COMS Integrated Circuit,Basic MOS Device Physics,MOS device layout

25、The layout of a MOSFET is determined by both the electrical properties required of the device in the circuit and the “design rules” imposed by the technology. 注意: electrical, imposed,Design of Analog COMS Integrated Circuit,electrical,electrical adj. 用電的， 與電有關(guān)的， 電學的； 令人激動的， electricity electric electron electronic 1. electricity, 意思是電,電流,是名詞. 2. electron,電子3. electronic, 意思是電子的,電子學的,形容詞4. electric, 意思是帶電的,發(fā)電的,電動的,也是形容詞.,Design of Analog COMS Integrated Circuit,課上作業(yè),channel length modulation (CLM) is a shorte